外源性血管内皮生长因子基因对新生鼠缺氧缺血性脑损伤脑细胞凋亡的影响

目的 探讨外源性血管内皮生长因子(VEGF)基因对新生鼠缺氧缺血性脑损伤(HIBD)脑细胞凋亡的影响.方法 将36只7日龄新生大鼠随机分为对照组和治疗组,制备HIBD大鼠模型,经前囟分别注射空载质粒PCDNA 3.1和负载VEGF 120 cDNA的质粒PCDNA 3.1(100μg/只),应用流式细胞仪检测脑细胞的凋亡情况.结果 治疗组的脑细胞凋亡率为8.93±0.332,明显低于对照组的17.505±0.949,差异有非常显著性(P<0.01).结论 外源性VEGF可以减少脑细胞的凋亡,可能成为治疗HIBD的一条新途径.

Effect of exogenesis vascular endothelial growth factor gene on the apoptosis of brain cells in the HIBD of newborn rats

Objective To explore the effect of exogenesis VEGF 120 gene on the apoptosis of brain cells in the HIBD of newborn rats. Methods VEGF eukaryotic expression plasmid (pCDNA 3.1/r VEGF 120) was constructed by cloning rat VEGF 120 cDNA into eukaryotic expression vector pCDNA 3.1. The HIBD model was established with seven days old SD rats,and all rats were diveded into two groups at random :contral group 18 rats( every rat model was injected pCDNA 3.1 100 μg immediately after hypoxia-is-chemic.then raised seven days) and therapy group 18 rats (every rat model was injected pCDNA 3.1/ rVEGF 120 100 μg immediately after hypoxia-ischemic). Flow cytometer( FCM) was used to detect the ratio of apoptosis of brain cell. Results There was a significant decrease in the ratio of apoptosis brain cells( control group 17.505 ± 0.949; therapy group 8.93 ± 0. 332). Conclusion The VEGF gene product can reduce apoptosis of brain cells.