High dielectric constant and high breakdown strength polyimide via tin complexation of the polyamide acid precursor |
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| Authors: | Abdullah Alamri Chao Wu Shamima Nasreen Huan Tran Omer Yassin Ryan Gentile Deepak Kamal Rampi Ramprasad Yang Cao Gregory Sotzing |
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| Institution: | Institute of Materials Science, University of Connecticut, USA.; Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut, USA ; School of Materials Science and Engineering, Georgia Institute of Technology, USA ; Department of Chemistry, University of Connecticut, USA |
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| Abstract: | Polymer dielectrics with ultra-high charge–discharge rates are significant for advanced electrical and electronic systems. Despite the fact that polymers possess high breakdown strength, the low dielectric constant (k) of polymers gives rise to low energy densities. Incorporating metal into polyimides (PI) at the polyamic acid (PAA) precursor stage of the synthetic process is a cheap and versatile way to improve the dielectric constant of the hybrid system while maintaining a high breakdown strength. Here, we explore inclusion of different percentages of Sn as a coordinated complex in a polyimide matrix to achieve metal homogeneity within the dielectric film to boost dielectric constant. Sn–O bonds with high atomic polarizability are intended to enhance the ionic polarization without sacrificing bandgap, a measurable property of the material to assess intrinsic breakdown strength. Enhancements of k from ca. 3.7 to 5.7 were achieved in going from the pure PI film to films containing 10 mol% tin.Polyimide with high dielectric constant and breakdown strength is synthesized via tin complexation of the polyamide acid precursor. Sn–O bonds with high atomic polarizability are intended to enhance the ionic polarization without sacrificing bandgap. |
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