Cation exchange synthesis of CuInxGa1−xSe2 nanowires and their implementation in photovoltaic devices |
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| Authors: | Guanwei Jia Kun Wang Baokun Liu Peixu Yang Jinhui Liu Weidong Zhang Rongbin Li Chengduo Wang Shaojun Zhang Jiang Du |
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| Institution: | School of Physics and Electronics, Henan University, Kaifeng 475004 China ; Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001 China.; School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083 China ; Department of Chemical Engineering, Texas Materials Institute, Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin TX 78712 USA |
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| Abstract: | CuInxGa1−xSe2 (CIGS) nanowires were synthesized for the first time through an in situ cation exchange reaction by using CuInSe2 (CIS) nanowires as a template material and Ga-OLA complexes as the Ga source. These CIGS nanowires maintain nearly the same morphology as CIS nanowires, and the Ga/In ratio can be controlled through adjusting the concentration of Ga-OLA complexes. The characteristics of adjustable band gap and highly effective light-absorbances have been achieved for these CIGS nanowires. The light-absorbing layer in photovoltaic devices (PVs) can be assembled by employing CIGS nanowires as a solar-energy material for enhancing the photovoltaic response. The highest power conversion efficiency of solar thin film semiconductors is more than 20%, achieved by the Cu(InxGa1−x)Se2 (CIGS) thin-film solar cells. Therefore, these CIGS nanowires have a great potential to be utilized as light absorber materials for high efficiency single nanowire solar cells and to generate bulk heterojunction devices.CuInxGa1−xSe2 (CIGS) nanowires were synthesized for the first time through an in situ cation exchange reaction by using CuInSe2 (CIS) nanowires as a template material and Ga-OLA complexes as the Ga source. |
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