Chemical functionalization of the ZnO monolayer: structural and electronic properties

Two-dimensional zinc oxide (ZnO) materials have been extensively investigated both experimentally and theoretically due to their novel properties and promising applications in optoelectronic and spintronic devices; however, how to tune the electronic property of the ZnO monolayer is still a challenge. Herein, employing the first-principles calculations, we explored the effect of chemical functionalization on the structural and electronic properties of the ZnO monolayer. The results demonstrated that the hydrogenated-, fluorinated- or Janus-functionalized ZnO monolayers were thermodynamically and mechanically stable except for the fully hydrogenated ZnO monolayer. The band gap of the ZnO monolayer could be effectively modulated by hydrogenation or fluorination, which varied from 0 to 2.948 eV, as obtained by the PBE functional, and from 0 to 5.114 eV, as obtained by the HSE06 functional. In addition, a nonmagnetic metal → nonmagnetic semiconductor transition was achieved after hydrogenation, whereas a transition from a magnetic half-metal to nonmagnetic semiconductor occurred after fluorination of the ZnO monolayer. These results demonstrate that tunability of the electronic properties of the ZnO monolayer can be realized by chemical functionalization for future nanoelectronic device applications.

After hydrogenation or fluorination, the band gap of the ZnO monolayer can be effectively modulated, and a nonmagnetic metal or magnetic half-metal → non-magnetic semiconductor transition can be achieved.