Single crystal growth and structure analysis of type-I (Na/Sr)–(Ga/Si) quaternary clathrates |
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| Authors: | Hironao Urushiyama Haruhiko Morito Hisanori Yamane |
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| Institution: | Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 Japan ; Department of Metallurgy, Materials Science and Materials Processing, Graduate School of Engineering, Tohoku University, 6-6-04 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 Japan ; Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 Japan, |
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| Abstract: | Single crystals of (Na/Sr)–(Ga/Si) quaternary type-I clathrates, Na8−ySryGaxSi46−x, were synthesized by evaporating Na from a mixture of Na–Sr–Ga–Si–Sn in a 6 : 0.5 : 1 : 2 : 1 molar ratio at 773 K for 12 h in an Ar atmosphere. Electron-probe microanalysis and single-crystal X-ray diffraction revealed that three crystals from the same product were Na8−ySryGaxSi46−x with x and y values of 7.6, 2.96; 8.4, 3.80; and 9.1, 4.08. It was also shown that increasing the Sr and Ga contents increased the electrical resistivity of the crystal from 0.34 to 1.05 mΩ cm at 300 K.Single crystals of (Na/Sr)–(Ga/Si) quaternary type-I clathrates, Na8−ySryGaxSi46−x, were synthesized by evaporating Na from a mixture of Na–Sr–Ga–Si–Sn in a 6 : 0.5 : 1 : 2 : 1 molar ratio at 773 K for 12 h in an Ar atmosphere. |
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