GaAs半导体激光对狗的上颌骨快速扩弓后新骨形成的促进效果

目的:通过GaAs半导体激光对狗的上颌骨快速扩弓后进行一定剂量的照射,探讨GaAs半导体激光对狗的上颌骨腭中缝处新骨形成的促进效果,为今后口腔正畸利用激光促进新骨形成的临床工作提供一定的实验依据。方法:随机选3只狗定为实验组,采用快速螺旋扩弓器打开腭中缝,并同时用GaAs半导体激光MDC-500型进行照射;另选3只狗定为对照组,只采用快速螺旋扩弓器打开腭中缝,不进行GaAs半导体激光的照射。快速扩弓3周,机械保持4周,自然保持8周。制作组织学标本,行光镜观察。结果:组织切片显示实验组腭中缝处新生类骨质的数量和面积都大于对照组,统计学有意义。结论:GaAs半导体激光对腭中缝处扩弓后新骨形成有一定的促进作用,成骨面积平均增加35%,为今后临床应用提供基础理论依据。

Effect of GaAs Semiconductor Laser on the Formation of New Bone After Rapid Maxillary Expansion of Dogs

Objective: To study the effect of GaAs semiconductor laser on the formation of new bone after rapid maxillary expansion of dogs.Methods: The mid-palatal suture of three randomly selected dogs(experimental group) was expanded with the help of rapid maxillary expansion appliances and irradiated with GaAs semiconductor laser MDC-500 at the same time.The other three dogs(controlled group) only received rapid maxillary expansion without irradiation.Rapid maxillary expansion lasted for three weeks followed by four-week mechanical maintaining and eight-week natural maintaining.The mid-palatal suture of the dogs was made into tissue sections,which was later observed through optical microscope.Results: Tissue sections showed that new bone area of the experimental group was greater than that of the controlled group and the difference between two groups was statistically significant. Conclusion: GaAs semiconductor laser obviously accelerated the formation of new bone at the mid-palatal suture after rapid maxillary expansion.This has provided theoretical foundation for future orthodontic clinical work.