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Study of Structural and Optoelectronic Properties of Thin Films Made of a Few Layered WS2 Flakes
Authors:Anna Ł  apiń  ska,Michał   Kuź  niewicz,Arkadiusz P. Gertych,Karolina Czerniak-Ł  osiewicz,Klaudia Ż  erań  ska-Chudek,Anna Wró  blewska,Michał   Ś  winiarski,Anna Duż    ska,Jarosł  aw Judek,Mariusz Zdrojek
Affiliation:Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland; (M.K.); (A.P.G.); (K.C.-Ł.); (K.Ż.-C.); (A.W.); (M.Ś.); (A.D.); (J.J.); (M.Z.)
Abstract:We report a surfactant-free exfoliation method of WS2 flakes combined with a vacuum filtration method to fabricate thin (<50 nm) WS2 films, that can be transferred on any arbitrary substrate. Films are composed of thin (<4 nm) single flakes, forming a large size uniform film, verified by AFM and SEM. Using statistical phonons investigation, we demonstrate structural quality and uniformity of the film sample and we provide first-order temperature coefficient χ, which shows linear dependence over 300–450 K temperature range. Electrical measurements show film sheet resistance RS = 48 MΩ/□ and also reveal two energy band gaps related to the intrinsic architecture of the thin film. Finally, we show that optical transmission/absorption is rich above the bandgap exhibiting several excitonic resonances, and nearly feature-less below the bandgap.
Keywords:WS2   tungsten disulfide   thin film   Transition Metal Dichalcogenides (TMDC)   Raman spectroscopy   electrical properties   optical properties   thermal properties   first order temperature coefficient   2D materials
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