低强度半导体激光对脑缺血再灌注大鼠IL-6的影响

目的 观察低强度半导体激光(LISCL)疗法对脑缺血再灌注大鼠IL-6的影响。方法 应用LISCL经腹腔辐照治疗线栓法所制作的大鼠脑缺血再灌注模型,采用免疫组织化学方法检测脑组织IL-6的变化。结果 (1)IL-6在正常神经元与胶质细胞仅有少量表达,缺血再灌注6 h IL-6表达较正常神经元稍增多,但无统计学意义(P>0.05),12 h开始在梗死周围区增高,第3天显著增强,以后逐渐下降。(2)LISCL治疗后与对照组比较,IL-6表达明显降低(P<0.01)。结论LISCL治疗可显著抑制缺血损伤区IL-6过度表达,减轻脑组织的损伤。

The Influence of Low Intensity Semiconductor Laser on Expression of IL - 6 in Cerebral Ischemia Reperfusion Rats

Objective To observe the influence of low intensity semiconductor laser (LISCLT) on the IL- 6 in cerebral ischemia and reperfusion rats. Methods Ischemia and repcrfusion model made by line embolism method was irradiated with LISCLT, the IL -6 in brain was detected by immunohistochemical method. Results Normal neuron can express little IL- 6.There was no statistical significance between the expression at 6h after ischemia reperfusion and that of normal group. The expression began to increase at 12h ( P <0.01 ), arrive at the peak at the 3th day in the infarction boundary zone, and then decrease in the later days. Comparing with the control group, the expression of IL - 6 after LISCLT therapy decreases obviously (P <0. 01). Conclusions LISCLT can inhibit the expression of IL- 6, which can damage the brain tissue, and abate the brain injury.