Influence of Different Heater Structures on the Temperature Field of AlN Crystal Growth by Resistance Heating |
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| Authors: | Ruixian Yu Chengmin Chen Guodong Wang Guangxia Liu Shouzhi Wang Xiaobo Hu Ma Lei Xiangang Xu Lei Zhang |
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| Affiliation: | 1.State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China; (R.Y.); (S.W.); (X.X.);2.Energy Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250100, China; (C.C.); (G.L.);3.Jinan Institute of Supercomputing Technology, Jinan 250100, China;4.School of Opto-Electronic Engineering, Zaozhuang University, Zaozhuang 277160, China; |
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| Abstract: | Based on the actual hot zone structure of an AlN crystal growth resistance furnace, the global numerical simulation on the heat transfer process in the AlN crystal growth was performed. The influence of different heater structures on the growth of AlN crystals was investigated. It was found that the top heater can effectively reduce the axial temperature gradient, and the side heater 2 has a similar effect on the axial gradient, but the effect feedback is slightly weaker. The axial temperature gradient tends to increase when the bottom heater is added to the furnace, and the adjustable range of the axial temperature gradient of the side 1 heater + bottom heater mode is the largest. Our work will provide important reference values for AlN crystal growth by the resistance method. |
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| Keywords: | AlN crystal temperature field crystal growth numerical simulation |
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