| An experimental and theoretical study of pendellösung fringes in synchrotron section topographs of silicon wafers |
| |
| 引用本文： | Partanen J,Tuomi T. An experimental and theoretical study of pendellösung fringes in synchrotron section topographs of silicon wafers[J]. Journal of X-ray science and technology, 1990, 2(3): 165-171. DOI: 10.1016/0895-3996(90)90009-B |
| |
| 作者姓名： | Partanen J Tuomi T |
| |
| 摘 要： |
|
| 收稿时间： | 1990-02-14 |
An experimental and theoretical study of pendellösung fringes in synchrotron section topographs of silicon wafers |
| |
| Partanen J,Tuomi T. An experimental and theoretical study of pendellösung fringes in synchrotron section topographs of silicon wafers[J]. Journal of X-ray science and technology, 1990, 2(3): 165-171. DOI: 10.1016/0895-3996(90)90009-B |
| |
| Authors: | Partanen J Tuomi T |
| |
| Affiliation: | Laboratory of Physics, Helsinki University of Technology, Otakaari 1 M, 02150 Espoo, Finland. |
| |
| Abstract: | X-ray section topographs of nearly perfect Czochralski-grown wafers were made with synchrotron radiation having a continuous spectrum. An intensity curve measured from the x-ray film is compared to the calculated curve obtained using the dynamical theory of x-ray diffraction. A computer simulation of the topograph is also presented. A good agreement between theory and experiment is found except in the middle part of the topograph. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect PubMed 等数据库收录！ |
