颅内电极V-EEG对难治性颞叶癫痫致痫灶的定位价值

目的：探讨颅内埋藏电极同步录像脑电图监测（V-EEG）对难治性颞叶癫痫致痫灶的定位作用。方法：对临床、影像学检查及头皮电极脑电图（EEG）不能明确癫痫致痫灶的3例难治性颞叶癫痫患者，采用颅骨钻孔方法埋置硬膜下电极和深部电极，经长程颅内电极V—EEG监测进一步定位致痫灶。结果：3例难治性颡叶癫痫患者通过颅内电极V-EEG监测，并依据发作初始期的EEG异常放电特征确定了致痫灶，并进行病灶切除。结论：依据发作初始期颅内电极EEG痫样放电的部位和范围，能够为难治性癫痫外科手术治疗提供更可靠的定位指标。

Value of intracraniai V-EEG monitoring for localizing epileptogenic zone in intractable temporal lobe epilepsy

Objective：To explore the role of long-term intracranial electrode Video EEG（V-EEG） monitoring for localizing epileptogenic zone in intractable temporal lobe epilepsy. Methods： Three refractory epilepsy patients, whose seizure onsets were not localized with MRI imaging and scalp electrode EEG recording,received long-term intra-cranial electrode V EEG monitoring with the subdural and depth electrodes. Results： Epileptogenic zones were determined and then removed according to the ictal intracranial electrode EEG recondings at the epileptogenic discharge of initial stage of seizures. Conclusion： The position and extent of the initial ictal EEG epileptogenic discharge are reliable evidence for the locationfo epileptogenic zone and refractory epilepsy surgery.