半导体激光血管内照射联合针刺疗法对重度颅脑损伤昏迷的催醒作用

目的探讨半导体激光血管内照射联合针刺疗法对重度颅脑损伤昏迷患者的催醒作用。方法1998年至2000年稳定期重度颅脑损伤昏迷患者76例,随机分为2组,各38例。对照组行常规治疗。治疗组低强度半导体激光血管内照射同时行针刺治疗;激光功率2～3.5mW,照射时间50～60min;针刺取穴关中、风府、风池、内关、神门、劳宫、十宣、三阴交、涌泉;激光照射及针刺同时进行,每日1次,15次为一疗程。2组患者治疗后格拉斯哥迷量表(GCS)评分≥9为清醒。结果治疗后第25天,治疗组清醒33例,对照组清醒27例,差异有显著意义(P<0.05)结论激光血管内照射加针刺疗法可显著缩短重度颅脑损伤稳定期昏迷患者的昏迷时间。

Awakening Effect of Semiconductor Laser Intravascular Irradiation Combined with Xingnao Kaiqiao Acupuncture in Comatose Patients Experienced with Serious Craniocerebral Injury

Objective To determine the awakening effect of semiconductor laser intravascular irradiation combined with Xingnao Kaiqiao acupuncture in comatose patients experienced with serious craniocerebral injury,and summarize our experience of the treatment in patients with long coma. Methods From 1998 to 2000,seventy six patients hospitalized in stable phase with long coma were divided into two groups,thirty eight cases in the control group were treated by routine treatment,the other thirty eight cases in the treated group were treated by routine treatment added semiconductor laser intravascular irradiation combined with Xingnao Kaiqiao acupuncture.Both groups were taken hemorheology index.Eleven cases in treatment group were taken follow up electroencephalogram. Results In treatment group the coma time was reduced from 23.5 days to 18.5 days(t=2.60,P<0.05,vs control group),and the hemorheology index was also ameliorated.Electroencephalogram in 7 cases in treatment group induced desynchronization. Conclusions Routine treatment added semiconductor laser intravascular irradiation combined with Xingnao Kaiqiao acupuncture can significantly shorten coma time in comatose patients experienced with serious craniocerebral injury.