首页 | 本学科首页   官方微博 | 高级检索  
     


Electronic and structural characterisation of polycrystalline platinum disulfide thin films
Authors:Kuanysh Zhussupbekov,Conor P. Cullen,Ainur Zhussupbekova,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy,Cormac Ó   Coileá  in
Affiliation:School of Physics, Trinity College Dublin, Dublin 2 Ireland.; AMBER Centre, CRANN Institute, Trinity College Dublin, Dublin 2 Ireland.; School of Chemistry, Trinity College Dublin, Dublin 2 D02 PN40 Ireland ; Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, 85579 Neubiberg, Germany
Abstract:We employ a combination of scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) to investigate the properties of layered PtS2, synthesised via thermally assisted conversion (TAC) of a metallic Pt thin film. STM measurements reveal the 1T crystal structure of PtS2, and the lattice constant is determined to be 3.58 ± 0.03 Å. STS allowed the electronic structure of individual PtS2 crystallites to be directly probed and a bandgap of ∼1.03 eV was determined for a 3.8 nm thick flake at liquid nitrogen temperature. These findings substantially expand understanding of the atomic and electronic structure of PtS2 and indicate that STM is a powerful tool capable of locally probing non-uniform polycrystalline films, such as those produced by TAC. Prior to STM/STS measurements the quality of synthesised TAC PtS2 was analysed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. These results are of relevance to applications-focussed studies centred on PtS2 and may inform future efforts to optimise the synthesis conditions for thin film PtS2.

Semiconducting thin-film polycrystalline PtS2 is characterised by atomically resolved scanning tunnelling microscopy and spectroscopy.
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号