首页 | 本学科首页   官方微博 | 高级检索  
     


Glycaemic control, markers of endothelial cell activation and oxidative stress in children with type 1 diabetes mellitus
Authors:Seckin Dilara  Ilhan Necip  Ilhan Nevin  Ertugrul Sabahattin
Affiliation:Firat University, Firat Medical Center, Department of Biochemistry, Elazig, Turkey. drdilara_76@hotmail.com
Abstract:BACKGROUND: The aim of this study was to compare the effect of glycaemic control on oxidative stress and biochemical markers of endothelial activation in type 1 diabetic children. METHODS: Serum total cholesterol, HDL cholesterol, VLDL cholesterol, apolipoprotein A1, apolipoprotein B, HbA(1c), MDA, VEGF, NO, ICAM levels were assessed in 100 children with type 1 DM aged 2-17 years. Study cases were evaluated in three groups in view of their mean HbA(1c) values, as metabolically well-controlled (HbA(1c)< or =8%) and poorly controlled (HbA(1c)>8%) patients with DM and 40 healthy children were included as normal controls. RESULTS: Levels of MDA, NO, VEGF, ICAM, apolipoprotein A1 and apolipoprotein B in metabolically poorly controlled diabetic patients were significantly higher than control group (P<0.05). In correlation analysis of HbA(1c) to VEGF, no significant correlations were detected in metabolically well-controlled DM, but there were significant correlations between HbA(1c) and NO, MDA, ICAM levels. In correlation analysis of HbA(1c) to VEGF, NO, MDA and ICAM levels, significant correlations were detected in poorly controlled diabetics (P<0.05). CONCLUSIONS: In the present study, increased levels of MDA, NO, ICAM-1 and VEGF levels showed that especially metabolically poorly controlled DM children are at high risk of atherosclerosis and vascular complications of DM and that there is a significant relationship between HbA(1c) and oxidative stress. It may be appropriate to evaluate levels of VEGF and sICAM-1 as well as markers of oxidative stress in addition to routine laboratory assessments in evaluation of type 1 DM pediatric patients.
Keywords:
本文献已被 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号