Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel |
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| Authors: | Liuhui Lei Yuanyuan Tan Xing Yuan Wei Dou Jiale Zhang Yongkang Wang Sizhe Zeng Shenyi Deng Haoting Guo Weichang Zhou Dongsheng Tang |
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| Affiliation: | School of Physics and Electronics, Key Laboratory of Low Dimensional Quantum Structures and Quantum Control, Key Laboratory for Matter Microstructure and Function of Hunan Province, Synergetic Innovation Centre for Quantum Effects and Application, Hunan Normal University, Changsha 410081 People''s Republic of China.; Hunan First Normal University, Changsha 410205 People''s Republic of China |
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| Abstract: | Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm−2 related to electric-double-layer formation. The threshold voltage, drain current on/off ratio and subthreshold swing are estimated to be −0.1 V, 1.2 × 106 and 80 mV per decade, respectively. The combination of low voltage, high current on-to-off ratio and room temperature processing make the flexible vertical-IGZO-channel TFTs very promising for low-power portable flexible electronics applications.Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature. |
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