Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al₂O₃) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (T_dep). The Al₂O₃ gate insulator with a low T_dep exhibited a high amount of hydrogen in the film, and the relationship between the hydrogen content and the electrical properties of the TFTs was investigated. The device with the Al₂O₃ gate insulator having a high H content showed much better transfer parameters and reliabilities than the low H sample. This is attributed to the defect passivation effect of H in the active layer, which is diffused from the Al₂O₃ layer. In addition, according to the post-annealing temperature (T_post-ann), a-IGZO TFTs exhibited two unique changes of properties; the degradation in low T_post-ann and the enhancement in high T_post-ann, as explained in terms of H diffusion from the gate insulator to an active layer.

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al₂O₃) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (T_dep).