Synthesis,electronic structures,and photoluminescence properties of an efficient and thermally stable red-emitting phosphor Ca3ZrSi2O9:Eu3+,Bi3+ for deep UV-LEDs

A series of red-emitting Ca₃ZrSi₂O₉:Eu³⁺,xBi³⁺ phosphors was synthesized using a conventional high temperature solid-state reaction method, for the purpose of promoting the emission efficiency of Eu³⁺ in a Ca₃ZrSi₂O₉ host. The site preference of Bi³⁺ and Eu³⁺ in the Ca₃ZrSi₂O₉ host was evaluated by formation energy. The effects of Bi³⁺ on electronic structure, luminescent properties, and related mechanisms were investigated. The inner quantum yield of the optimized sample increased to 72.9% (x = 0.08) from 34.6% (x = 0) at 300 nm ultraviolet light excitation. The optimized sample (x = 0.08) also showed excellent thermal stability, and typically, 84.2% of the initial emission intensity was maintained when the temperature increased to 150 °C from 25 °C, which is much higher than that without Bi³⁺ doping (70.1%). The mechanisms of emission properties and thermal stability enhancement, as well as the redshift of the charge transfer band (CTB) induced by Bi³⁺ doping in the Ca₃ZrSi₂O₉:Eu³⁺ phosphor, were discussed. This study elucidates the photoluminescence properties of Bi³⁺-doped Ca₃ZrSi₂O₉:Eu³⁺ phosphor, and indicates that it is a promising luminescent material that can be used in ultraviolet light-emitting diodes.

A red-emitting phosphor Ca₃ZrSi₂O₉:Eu³⁺,Bi³⁺ with high quantum yield and thermal stability was developed by introducing Bi³⁺ as an efficient sensitizer.