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Impact of bulky phenylalkyl substituents on the air-stable n-channel transistors of birhodanine analogues
Authors:Kodai Iijima  Yann Le Gal  Dominique Lorcy  Takehiko Mori
Affiliation:Department of Materials Science and Engineering, Tokyo Institute of Technology, O-okayama 2-12-1, Meguro-ku, 152-8552 Japan.; Univ. Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000 Rennes France
Abstract:By introducing bulky 2-phenylethyl groups into sulfur-rich electron acceptors, 5,5′-bithiazolidinylidene-2,2′-dione-4,4′-dithione and 5,5′-bithiazolidinylidene-2,4,2′,4′-tetrathione, electron transport with the mobility of 0.27 cm2 V−1 s−1 with ambient and long-term stability is achieved in thin-film transistors. Bulky groups destroy the intermolecular S–S network, but the long-term transistor stability is maintained. Here, benzyl groups realize one-dimensional stacking structures, whereas 2-phenylethyl groups lead to herringbone structures.

Performance and long-term air stability of birhodanine-based n-channel transistors are improved by introducing phenylethyl moieties.
Keywords:
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