Investigation of electronic properties of chemical vapor deposition grown single layer graphene via doping of thin transparent conductive films

It is a crucial challenge to obtain the desired electronic properties of two-dimensional materials for various ubiquitous applications and improvements in the existing technology. In this article, we have demonstrated the modulation in electronic features of the chemical vapor deposition (CVD) grown single-layer graphene (SLG) via wet doping of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). The PEDOT:PSS is well known as conducting polymer and used as transparent conducting electrode in flexible organic electronic devices. The effect of doping on SLG samples were examined by Raman spectroscopy, electrical transport measurement, atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). The Raman peaks position of doped samples provided sought evidence of p-type doping of SLG after the deposition of PEDOT:PSS films. The electrical measurement confirmed the p-type doping of SLG and also revealed enhanced carrier density and mobility of SLG after the deposition of PEDOT:PSS films. AFM micrographs revealed the homogeneous loading of PEDOT:PSS particles over the SLGs. Further, KPFM technique was used to estimate the work function modulation of SLG after PEDOT:PSS film deposition. Our investigation will be useful for understanding the device physics as well as improvement of photovoltaic devices based on PEDOT:PSS coated graphene.

The tuning of charge carrier of graphene is a potential step for the realization of multifunctional use in current electronic/optoelectronic devices.