Photosensitivity in doped and sensitized cis-polyphenylacetylene

The photosensitivity in cis-polyphenylacetylene (cis-PPA, polymerized with rare-earth catalysts) can be significantly enhanced by doping the PPA with I₂ or FeCl₃ and sensitizing with 4-isothiocyanatofluorescein (F-II) or 2,4,7-trinitro-9-fluorenone (TNF), which are powerful sensitizers. The electrophotographic photoreceptor (P/R) device with cis-PPA + F-II (on Al substrate) appeared preferable in photosensitivity enhancement and showed good photosensitivity: dark decay 1,8 V/s; maximum rate of discharge 321 V/s; residual surface potential 22 V; discharge 89, 1%; photosensitivity 2,96 s^?1. This is a new “family” of photosensitive materials which can be used in a duplicator.