Behaviour of Microwave-Heated Al4SiC4 at 2.45 GHz |
| |
Authors: | Takashi Fujii Akio Oshita Keiichiro Kashimura |
| |
Institution: | Faculty of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan; (T.F.); (A.O.) |
| |
Abstract: | The ongoing development of high-temperature processes with the use of microwaves requires new microwave absorbers that are useful at these temperatures. In this study, we propose Al4SiC4 powders as important and efficient microwave absorbers. We investigated both the behavioural microwave heating and electrical permittivity characteristics of Al4SiC4 powders with various particle sizes at 2.45 GHz. The TE103 single-mode cavity indicated that Al4SiC4 powder samples yielded different heating behaviours and dielectric constants for each particle size compared with SiC. By microwave heating ∅50 mm × 5 mm disks of Al4SiC4 and SiC, we demonstrate that for specific sizes, Al4SiC4 can be heated at a higher temperature than SiC. Finally, the results of the two-dimensional two-colour thermometer show that an energy concentration appears at the interface of the microwave-heated Al4SiC4. These phenomena, which are inconsistent in individual physical property values, can be explained without contradicting microwave heating physics. |
| |
Keywords: | microwave heating microwave absorbers Al4SiC4 electrical permittivity |
|
|