Fabrication of CIS Absorber Layers with Different Thicknesses Using A Non-Vacuum Spray Coating Method |
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| Authors: | Chien-Chen Diao Hsin-Hui Kuo Wen-Cheng Tzou Yen-Lin Chen Cheng-Fu Yang |
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| Institution: | 1.Department of Electronic Engineering, Kao Yuan University, Kaohsiung 82151, Taiwan; E-Mail: ;2.Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan; E-Mail: ;3.Department of Electro-Optical Engineering, Southern Taiwan, University, Tainan 71005, Taiwan; E-Mail: ;4.Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan; E-Mail: |
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| Abstract: | In this study, a new thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CuInSe2 absorber layers. The spray coating method developed in this study was a non-vacuum process, based on dispersed nano-scale CuInSe2 precursor and could offer a simple, inexpensive, and alternative formation technology for CuInSe2 absorber layers. After spraying on Mo/glass substrates, the CuInSe2 thin films were annealed at 550 °C by changing the annealing time from 5 min to 30 min in a selenization furnace, using N2 as atmosphere. When the CuInSe2 thin films were annealed, without extra Se or H2Se gas used as the compensation source during the annealing process. The aim of this project was to investigate the influence of annealing time on the densification and crystallization of the CuInSe2 absorber layers to optimize the quality for cost effective solar cell production. The thickness of the CuInSe2 absorber layers could be controlled as the volume of used dispersed CuInSe2-isopropyl alcohol solution was controlled. In this work, X-ray diffraction patterns, field emission scanning electron microscopy, and Hall parameter measurements were performed in order to verify the quality of the CuInSe2 absorber layers obtained by the Spray Coating Method. |
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| Keywords: | CuInSe2 absorber layer spray coating method non-vacuum method thickness |
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