Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process |
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| Authors: | Hyeon-Joong Kim Do-Won Kim Won-Yong Lee Kyoungdu Kim Sin-Hyung Lee Jin-Hyuk Bae In-Man Kang Kwangeun Kim Jaewon Jang |
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| Institution: | 1.School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.);2.School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea;3.School of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Korea; |
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| Abstract: | Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles. |
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| Keywords: | sol-gel Y2O3 RRAM UV/ozone photochemical flexible |
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