Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD |
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| Authors: | Teng Jiao Wei Chen Zhengda Li Zhaoti Diao Xinming Dang Peiran Chen Xin Dong Yuantao Zhang Baolin Zhang |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China |
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| Abstract: | In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied. Then nickel Schottky barrier diode and p-NiO/n-Ga2O3 heterojunction diode were fabricated and measured. Without any electric field management structure, the Schottky barrier diode and heterojunction diode have specific resistances of 3.0 mΩ·cm2 and 6.2 mΩ·cm2, breakdown voltages of 380 V and 740 V, thus yielding power figures of merit of 48 MW·cm−2 and 88 MW·cm−2, respectively. Besides, both devices exhibit a current on/off ratio of more than 1010. This shows the prospect of MOCVD in power device manufacture. |
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| Keywords: | Ga2O3 Schottky barrier diodes heterojunction MOCVD |
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