耐药性颞叶癫痫患者记忆功能损害的多因素分析

目的：观察耐药性颞叶癫痫患者记忆功能的损害并分析其影响因素。方法：采用韦氏记忆量表对32例耐药性颞叶癫痫患者记忆功能进行评估，并与32例普通癫痫患者进行比较，同时对可能的影响因素如发病年龄、发作频度、海马体积、脑电图异常放电范围、病程持续时间等进行相关性分析。结果：与普通癫痫患者比较，耐药性颞叶癫痫患者记忆功能普遍降低，尤其以短时记忆为明显。在其各种可能因素中，起病年龄、发作频度、抗癫痫药的种类和海马痫样放电的范围对记忆商（MQ）具有显著影响。结论：耐药性颞叶癫痫患者有明显记忆损害，起病年龄、发作频度、服用抗癫痫药的种类和海马痢样放电的范围是影响记忆功能的主要因素。

Analysis of multi-factors influencing the memory function of patients with parmacoresistant temporal lobe epilepsy

Objective：To evaluate the memory impairment in patients with pharmacoresistant tem- poral lobe epilepsy and to analyze its influencing factors. Methods：Wechsler memory scale was used to evaluate the memory function in patients with pharmacoresistant temporal lobe epilepsy, and the results were compared with the regular epileptic patients. Simultaneously, the possible influencing factors were analyzed. Results：The memory function decreased significantly in patients with pharmacoresistant temporal lobe epilepsy as compared with the regular epileptic patients, especially the short-term memory. The age of onset, the seizure frequency, the volume of the hippocampus, the range of abnormal discharges and the category of anti-epileptic drugs are related closely to the memory quotient（MQ）. Conclusion： Patients with pharmacoresistant temporal lobe epilepsy displayed a significant decrease of memory function. The principal factors influencing the memory function including the age of onset, the seizure frequency, the volume of the hippocampus, the range of abnormal discharges and the category of anti-epileptic drugs.