Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate |
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| Authors: | Genqiang Chen Wei Wang Fang Lin Minghui Zhang Qiang Wei Cui Yu Hongxing Wang |
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| Affiliation: | 1.Key Laboratory for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China; (G.C.); (W.W.); (F.L.); (M.Z.); (Q.W.);2.Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China;3.National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China |
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| Abstract: | In this work, hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a heteroepitaxial diamond substrate with an Al2O3 dielectric and a passivation layer were characterized. The full-width at half maximum value of the diamond (004) X-ray rocking curve was 205.9 arcsec. The maximum output current density and transconductance of the MOSFET were 172 mA/mm and 10.4 mS/mm, respectively. The effect of a low-temperature annealing process on electrical properties was also investigated. After the annealing process in N2 atmosphere, the threshold voltage (Vth) and flat-band voltage (VFB) shifts to negative direction due to loss of negative charges. After annealing at 423 K for 3 min, the maximum value of hole field effective mobility (μeff) increases by 27% at Vth − VGS = 2 V. The results, which are not inferior to those based on homoepitaxial diamond, promote the application of heteroepitaxial diamond in the field of electronic devices. |
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| Keywords: | heteroepitaxial diamond MOSFET annealing |
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