Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC |
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| Authors: | Matthias Kocher,Mathias Rommel,Paweł Piotr Michał owski,Tobias Erlbacher |
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| Affiliation: | 1.Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen, Germany; (M.R.); (T.E.);2.Łukasiewicz Research Network—Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland;3.Chair of Electron Devices, Friedrich-Alexander-University Erlangen-Nuremberg, Cauerstraße 6, 91058 Erlangen, Germany |
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| Abstract: | Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation. |
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| Keywords: | 4H-SiC ohmic contact SIMS Ti3SiC2 simulation |
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