1. Polymer Composites Engineering Laboratory, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, P.R. China;2. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, P.R. China;3. University of Chinese Academy of Sciences, Shijingshan District, Beijing, P.R. China
Abstract:
A series of brominated polystyrenes (BPSs) are readily synthesized and blended as polymer dopants with the p‐type semiconducting polymer, poly(3‐hexylthiophene) (P3HT), to improve theirelectrical performance. The obtained P3HT/BPS blend films exhibit increased carrier concentration resulting from doping of P3HT by BPS, which leads to excellent electrical performance, including enhanced hole mobility and conductivity, and the conductivity or mobility increases with the bromination degree of BPS. Compared with conventional small molecular dopants, the polymer dopant, BPS, shows not only excellent doping stability, but also good solution processibility, which makes it a promising materials for fabrication of low cost, flexible, transparent, and high performance solution processable organic electronic devices.