阿霉素在纳米钴修饰电极上的电化学行为及其应用

采用NaBH₄还原法制备了钴纳米粒，将其固定于氧化铟锡(ITO)电极上，首次制成了纳米钴修饰电极(NpCo/ITO)，并研究了阿霉素(adriamycin，ADM)在NpCo/ITO上的电化学性质。用循环伏安法(CV)、扫描电子显微镜(SEM)和能量色散谱(EDS)等对纳米钴修饰电极表面进行了表征。在纳米钴修饰电极上，阿霉素(ADM)在0.01 mol·L^-1 KH₂PO₄-K₂HPO₄溶液(pH 8.0)中，出现还原峰，峰电位为-0.67 V(vs Ag/AgCl),峰电流与ADM浓度在1.0×10^-8～2.0×10^-6 mol·L^-1呈线性关系，检测限为5.0×10^-9 mol·L^-1。循环伏安法研究表明，该体系属于具有吸附性的不可逆过程，NpCo/ITO对ADM的电化学还原过程产生较大的促进作用。

Electrochemical behaviour of the adriamycin on the cobalt nanoparticles modified ITO electrode

A cobalt nanoparticles modified ITO electrode (NpCo/ITO) was prepared by casting cobalt nanoparticles onto ITO electrode and the cobalt nanoparticles were synthesized by NaHB4 reduction. The electrochemical behaviors of adriamycin (ADM) on NpCo/ITO were studied. The modified ITO electrode was characterized by cyclic voltammetry (CV), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). In a 0.01 mol L(-1) PBS (pH 8.0) buffer solution, a sensitive reduction peak of ADM was obtained. A linear relationship is held between the peak current and ADM concentration in the range of 1.0 x 10(-8) - 2.0 x 10(-6) mol L(-1) with detection of 5.0 x 10(-9) mol L(-1)- by cyclic voltammetry (CV) response. The reduction process was irreversible with adsorption at the NpCo/ITO electrode. The modified electrode showed an excellent electrocatalytic activity for the ADM electrochemical reduction.