Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD |
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| Authors: | Martino Rimoldi Raimondo Cecchini Claudia Wiemer Alessio Lamperti Emanuele Longo Lucia Nasi Laura Lazzarini Roberto Mantovan Massimo Longo |
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| Affiliation: | Institute for Microelectronics and Microsystems, CNR-IMM Unit of Agrate Brianza, Via C. Olivetti 2, 20864 Agrate Brianza Italy.; University of Milano-Bicocca, Department of Material Science, Via R. Cozzi 55, 20126 Milan Italy ; Institute of Materials for Electronics and Magnetism, CNR-IMEM, Parma, Parco Area delle Scienze, 7/A, 43100 Parma Italy |
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| Abstract: | Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal–Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth and post-growth treatments were found to be pivotal in favoring out-of-plane and in-plane alignment of the crystallites composing the films. A comprehensive suite of characterization techniques were used to evaluate their composition, surface roughness, as well as to assess their morphology, crystallinity, and structural features, revealing that a quick post-growth annealing triggers the formation of epitaxial-quality Sb2Te3 films on Si(111).Highly oriented antimony telluride thin films are prepared by room temperature metalorganic chemical vapor deposition on Si(111). |
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