A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage |
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| Authors: | Yuxin Shen Zhaohao Zhang Qingzhu Zhang Feng Wei Huaxiang Yin Qianhui Wei Kuo Men |
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| Institution: | State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088 China.; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China ; GRIMAT Engineering Institute Co., Ltd., Beijing 101402 China ; General Research Institute for Nonferrous Metals, Beijing 100088 China ; University of Chinese Academy of Sciences, Beijing 100049 China |
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| Abstract: | In this study, a performance-enhanced charge trapping memory device with a Pt/Gd-doped HfO2/SiO2/Si structure has been investigated, where Gd-doped HfO2 acts as a charge trapping and blocking layer. The device demonstrates a large memory window of 5.4 V under a ±5 V sweeping voltage (360% of the device with pure HfO2), which is extremely attractive in low-power applications. In addition, the device also exhibits good retention characteristics with a 24.5% charge loss after the retention time of 1 × 105 seconds and robust endurance performance with a 1% degradation after 1 × 104 program/erase cycles. It is considered that the high density of defect states and the reduction in the defect energy levels induced by Gd-doping contribute to the performance improvement.In this study, a performance-enhanced charge trapping memory device with a Pt/Gd-doped HfO2/SiO2/Si structure has been investigated, where Gd-doped HfO2 acts as a charge trapping and blocking layer. |
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