Measurement of ionizing radiation using carbon nanotube field effect transistor |
| |
Authors: | Tang Xiao-Wu Yang Yong Kim Woong Wang Qian Qi Pengfei Dai Hongjie Xing Lei |
| |
Institution: | Department of Chemistry, Stanford University, Stanford, CA 94305, USA. |
| |
Abstract: | Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|