In Situ Monitoring of Pulsed Laser Annealing of Eu-Doped Oxide Thin Films |
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Authors: | Michal Novotný Jan Remsa rka Havlov Joris More-Chevalier Stefan Andrei Irimiciuc Sergii Chertopalov Petr Písaík Lenka Volfov Pemysl Fitl Tom Kmje
Martin Vrata Jn Lan
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Institution: | 1.Institute of Physics of the Czech Academy of Sciences, 182 21 Prague, Czech Republic; (J.R.); (Š.H.); (J.M.-C.); (S.A.I.); (S.C.); (P.P.); (L.V.); (P.F.); (T.K.); (J.L.);2.Department of Physics and Measurements, University of Chemistry and Technology, 166 28 Prague, Czech Republic;3.National Institute for Laser, Plasma and Radiation Physics (INFLPR), 077125 Măgurele, Romania;4.Faculty of Science, Charles University, 128 40 Prague, Czech Republic |
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Abstract: | Eu3+-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu3+ photoluminescence response. Eu-doped ZnO, TiO2, and Lu2O3 thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu3+ emission was observed for all annealed materials. PLA induces crystallization of TiO2 and Lu2O3 amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains’ coalescence was observed. |
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Keywords: | pulsed laser deposition pulsed laser annealing zinc oxide lutetium oxide titanium oxide europium in situ monitoring photoluminescence |
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