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1.
经皮肾囊穿刺封闭术治疗难治性肾病综合征临床研究   总被引:1,自引:0,他引:1  
目的 探讨介入疗法对难治性肾病综合征 (RNS)的疗效。方法 将 6 4例RNS随机分为A ,B两组 ,A组 32例 ,经皮肾囊穿刺向每一肾脂肪囊 (肾囊 )内注入 2 %利多卡因 ,每周 2次 ,同时口服强的松、洛汀新、潘生丁等治疗 ,B组 32例 ,应用强的松、洛汀新、潘生丁等治疗。结果 A组总有效率为 84 .4 % ,B组为 6 5 .6 % ,两组比较 (P <0 .0 5 ) ,A组 1年内复发率低 ,为 2 9.6 % ,B组为 71.4 % ,比较两组 (P <0 .0 1)。结论 利多卡因经皮肾囊内穿刺注射封闭疗法是目前治疗RNS最有效的方法之一 ,值得临床进一步的推广应用。  相似文献   
2.
芸香甙对大鼠内囊血肿的治疗作用   总被引:2,自引:0,他引:2  
芸香甙是黄酮类化合物,就其对大鼠内囊血肿的保护作用进行了初步研究。在内囊血肿大鼠模型上,芸香甙50、100mg.kg^-1可以明显改善大鼠的神经症状,降低神经症状和评分;芸香甙显著降低脑组织的丙二醛含量和提高超氧化物歧化酶的活性。  相似文献   
3.
周红宁  高凤鸣 《卫生研究》1993,22(5):285-288
研究了苏乐康、绿茶提取物对~(60)钴γ射线和雌性激素联合诱发叙利亚金黄地鼠胚胎细胞恶性转化的抑制能力,并用脉冲辐解技术,对其抑制机制进行初步探讨。实验结果表明,苏乐康、绿茶提取物对γ射线和雌性激素联合诱发的金黄地鼠胚胎细胞恶性转化的抑制率分别为70.15%(P<0.05)和81.59%(P<0.05),它们的这种抑制能力与其清除超氧阴离子的能力有关,  相似文献   
4.
目的 :研究情可舒胶囊的药理学作用。方法 :参照文献相应的药理学方法进行。结果 :情可舒胶囊不影响正常小鼠的探究行为 ,可提高小鼠高空应激条件下的协调运动能力 ,抑制小鼠的隔离性攻击行为和“失望”(不动 )行为 ,提高小鼠的耐缺氧能力 ,增强阈下剂量戊巴比妥钠的催眠作用 ,保护 RWIS对小鼠非特异性免疫功能的损害和对大鼠心肌及胃粘膜的损伤。结论 :情可舒胶囊具有显著的心因性应激反应调节作用 ,是一个较理想的心因性应激反应调节药物。  相似文献   
5.
6.
We report a dramatic change in the intensity of a Raman mode with applied magnetic field, displaying a gigantic magneto-optical effect. Using the nonmagnetic layered material MoS2 as a prototype system, we demonstrate that the application of a magnetic field perpendicular to the layers produces a dramatic change in intensity for the out-of-plane vibrations of S atoms, but no change for the in-plane breathing mode. The distinct intensity variation between these two modes results from the effect of field-induced broken symmetry on Raman scattering cross-section. A quantitative analysis on the field-dependent integrated Raman intensity provides a unique method to precisely determine optical mobility. Our analysis is symmetry-based and material-independent, and thus the observations should be general and inspire a new branch of inelastic light scattering and magneto-optical applications.Raman scattering is an inelastic light scattering technique that has generated an enormous impact on the study of the functionality of crystalline solids for the last quarter of a century (1). In solids, Raman scattering can be used to observe the Raman active phonons as well as optical quasiparticles (plasmons and magnons). The intensity of any Raman active mode depends upon the symmetry of the crystal, the symmetry of the mode, the intermediate excited states, and the polarization of the incident and detected light (2). This has made Raman spectroscopy an extremely powerful technique for probing nascent symmetry and symmetry changes induced by internal or external perturbations. For example, Raman spectroscopy has been used to explore the effects of external pressure, temperature, field, defects, and doping (1, 3). From a phenomenological perspective, the application of a magnetic field is an effective way to manipulate electrons through Lorentz force in the intermediate state of the Raman process, thus modulating the electronic susceptibility that determines the Raman phonon intensity. In this study, we demonstrate a very large magneto-optical Raman effect in a classic layered, nonmagnetic material, MoS2, driven by the broken symmetry induced by a magnetic field.Layered MoS2 is an obvious prototype material because it has demonstrated promising optoelectronic applications at nanometer scale (410), is a quasi-2D material, and has two well-defined and clearly distinct Raman active phonon modes (11). The layered semiconductor MoS2, which exhibits weak van der Waals coupling between neighboring layers, is structurally similar to graphite, and atomically thin flakes can be obtained from bulk crystals through mechanical exfoliation. Monolayer MoS2 has an direct band gap of ∼1.9 eV, whereas the thicker members of the family of transition-metal dichalcogenides are indirect-gap (∼1.2 eV) semiconductors (12, 13). This material allows us to investigate the significance on the Raman intensity due to symmetry changes going from a single layer of MoS2 to a bulk sample.Demonstrating a large magneto-optical Raman effect in a prototype compound is a fundamental breakthrough in the field of inelastic light scattering, allowing in principle the development of a new type of magneto-optical sensor. Magneto-optical applications are particularly important because these devices allow light intensity or polarization to be controlled using magnetic rather than electric or radiation fields. This control can greatly extend the optoelectronic application range and device-design degrees of freedom. The signal from conventional magneto-optical effects, such as the Kerr and Faraday effects, is generally weak, and an appreciable rotation of the light polarization requires sufficiently thick bulk materials. A magneto-optical coupling based on a different mechanism, such as the one demonstrated in this paper, would open new avenues for applications in atomically thin films or heterostructures.Monolayer and bilayer MoS2 flakes were obtained through mechanical exfoliation from a natural MoS2 single crystal (SPI Supplies) and transferred onto silicon wafers capped with 300-nm-thick SiO2 by a method that is analogous to that used for production of graphene (Fig. S1). The bulk samples were obtained by cleaving single crystals. Atomically thin MoS2 flakes were first visually identified by observing their interference color through an optical microscope. The thickness was further confirmed by measuring the frequency difference between the E2g/E′ and A1g/A′1 Raman modes (Fig. S1) (11).Open in a separate windowFig. S1.(Upper) Optical images of MoS2 samples in the form of (A) monolayer in the dashed region, (B) bilayer in the dashed region, and (C) bulk in the bright region. (Lower) Raman spectra from the corresponding three samples.Confocal micro-Raman measurements were performed in a backscattering configuration using a Jobin Yvon T64000 system equipped with a back-illuminated (deep-depletion) CCD. A 532-nm diode-pumped solid-state laser (Torus 532; Laser Quantum) was used for the measurements. The laser was focused onto the samples with a spot size of 5–10 μm2. The laser power was maintained at a level of 300 μW and monitored with a power meter (Coherent Inc.). Magnetic fields were generated up to 9 T using a superconducting magnet (Cryomagnetics) that has a room-temperature bore that is suitable for a microscope lens. The magnetic field direction was perpendicular to the sample surface. The 521-cm−1 Raman mode of the Si substrate for supporting the mono- and bilayer of MoS2 was also carefully monitored in the presence of magnetic fields; the intensities of the Si mode remained almost unchanged as the field was varied from 0 to 9 T in both the parallel and cross configurations (Fig. S2). Thus, the mode can be used to normalize the observed phonon intensities.Open in a separate windowFig. S2.(Left) Raman spectra of monolayer and (Right) bilayer MoS2 under magnetic fields. The 521-cm−1 mode from substrate silicon is also shown here for intensity comparison.A Stokes Raman process involving phonons is illustrated in Fig. 1A (1). Microscopically, Raman scattering is a three-step process: absorption of incoming photon for exciting the system to an intermediate excited state, phonon excitation by decaying to a lower-energy intermediate state, and emission of scattered photon by returning back to the ground state. Phonons are excited through electron–phonon interaction in the intermediate step. Naturally, the intensity of excited phonons reflected in Raman scattering spectra should be changed if the intermediate states of electrons are perturbed by magnetic field. The experimental schematic to realize such an idea is shown in Fig. 1B. A standard backscattering configuration is adopted in our experiments, that is, a linearly polarized incident light is normal to the surface of prototype material MoS2 and the scattered light is also normal to the surface. A magnetic field is applied perpendicular to the sample surface (i.e., parallel to the incident and scattering light beam) to perturb the symmetry of electronic states.Open in a separate windowFig. 1.(A) A schematic of a three-step Raman excitation process where phonons are excited through the intermediate electronic states. (B) Schematic of experimental configuration. The incident light polarization (ei) is along the x direction whereas the scattered light polarization (es) can be along either the x (parallel) or y (perpendicular) direction, and magnetic fields are perpendicular to the sample plane (i.e., along the z direction). A field-driven transverse component of electron motions under radiation field is illustrated, which effectively gives rise to a rotation of the polarization plane of the scattered light. Raman spectra of monolayer MoS2 of (C) parallel and (D) perpendicular polarization configurations with and without the magnetic field. The vibrational patterns of the corresponding E and A Raman modes are illustrated in the insets.MoS2 has a honeycomb-lattice structure similar to that of graphite. Mo atoms are sandwiched by neighboring S planes in a separate MoS2 layer (Fig. 1B), with the point-group symmetry of D6h in the bulk, which becomes D3d in the bilayer case. In monolayer form, the symmetry is further reduced to D3h due to the disappearance of the inversion center (Fig. 1C, Inset (11). The symmetries of the two modes are changed from bulk to bi- and monolayer because of the reduction of point-group symmetry mentioned above (11).

Table 1.

A- and E-mode symmetries with and without magnetic field in MoS2
Bulk/bilayerMonolayerBulk/bilayerMonolayer
FieldB = 0B // c
SymmetryD6h/D3dD3hC6h/C3iC3h
A-modeA1gA′1AgA′
E-modeE2g/EgE′E2g/EgE′
Open in a separate windowStrikingly, the application of a magnetic field results in dramatic and mode-selective change in Raman intensity, shown in Fig. 1 C and D for a monolayer case. The E-mode is almost magnetic-field-independent, but the A-mode displays a giant change in intensity with magnetic field, decreasing its intensity with field as the polarization of the measured scattered light is parallel to the incident light (ei?∥?es; Fig. 1C) but increasing its intensity as the scattered and incident light polarizations are perpendicular to each other (ei ⊥ es; Fig. 1D).The dramatic modulation of the Raman intensity by magnetic field is observed in monolayer, bilayer, and bulk MoS2. Fig. 2 displays the magnetic-field-dependent polarized Raman spectra for the three cases and two polarization configurations: parallel (ei?∥?es, left) and perpendicular (ei ⊥ es, right). The field dependence of the spectra for the three samples is almost identical. With increasing magnetic field strength, the frequencies of both E- and A-modes remain unchanged. The intensity of the E-mode is almost constant with increasing field for both polarization configurations, whereas for A-mode the intensity variation with the field exhibits complementary behavior between ei?∥?es and ei ⊥ es scattering configurations.Open in a separate windowFig. 2.Raman spectra of monolayer (A and B), bilayer (C and D), and bulk (E and F) MoS2 at room temperature and in the presence of magnetic fields in the (A, C, and E) parallel and (B, D, and F) perpendicular polarization configurations. Here ei/es denote the polarization of incident and scattered light, respectively.Fig. 3 AC displays the evolution of A-mode intensity as a function of magnetic field for the two polarization configurations and three samples, clearly showing similar field-induced anticorrelation intensity modulation. A major difference in the three cases is that, for monolayer MoS2, the A1′-mode intensity in the ei ⊥ es polarization configuration reaches its maximum at ∼6 T and then decreases slightly with increasing field. The maximum shifts to higher magnetic field in the bilayer and bulk cases, which will be discussed later.Open in a separate windowFig. 3.Magnetic-field dependence of the A′1/A1g intensity of (A) monolayer, (B) bilayer, and (C) bulk MoS2. The colored solid curves represent the theoretically derived intensity functions. (DF) Polarization P, which is defined as the relative intensity difference between the perpendicular and parallel polarization configurations, and its rate of change versus magnetic field.To understand the experimental results, we first examine the prevailing explanation of magnetic-field effects on Raman spectra. Most existing studies focus on spin-dependent phonon processes in magnetic materials (14) or the phonon–plasmon coupling (15). The absence of local spin moments in MoS2 imposes constraints on possible explanations. For example, the possibilities related to magnetic ions, such as spin-lattice interaction, magnetic polarons, or magnetic impurities, can be ruled out because there are no magnetic ions in the present material. The phonon–plasmon coupling mechanism seems unlikely because this coupling typically results in a change in phonon frequency, line width, and/or phonon line shapes due to the energy exchange between the excitations, which is not observed in our measurements. Furthermore, the fact that similar field-induced modulations are observed in both monolayer and bulk MoS2 makes interface-related effects implausible.Recent studies of Raman spectra under magnetic fields in graphene revealed that Landau levels are superimposed on original energy bands, which can substantially tune the inter- or intraband transitions and hence cause magneto-phonon resonances (1618). In the present work, thermal fluctuations are sufficiently strong to melt the Landau levels formed in the presence of magnetic fields up to 9 T at room temperature (Fig. S3). This makes it unlikely that the Landau levels are responsible for the anticorrelated Raman intensity change in response to magnetic fields in the two polarization configurations.Open in a separate windowFig. S3.Energy scales for (blue) Landau levels, (dashed) room temperature, and (red and green) phonon frequencies.The above analysis suggests that a field-induced intensity effect observed in the present work requires an examination of Raman process, especially the field effect on the electrons that mediate the inelastic light scattering. Classically, Raman scattering intensity is determined by the second-order electronic susceptibility (susceptibility derivative). The electronic susceptibility α can be expressed as a function of normal coordinates and external fields. The magnetic field effect on normal coordinates is negligible because ions/anions are too heavy compared with electrons, which allows us to safely separate electronic susceptibility into two decoupled terms, that is, αα(QB) ≈ α(Q) × α(B) ≈ const. × α(B), where B is the magnetic field and Q represents the normal coordinates.First, let us consider α(B) in a semiclassic scenario. The Lorentz force due to the applied field in normal direction (along z direction) to the sample plane (xy plane) generates a transverse component to the in-plane electron motion (Fig. 1B), resulting in a transfer of Raman intensity between the two orthogonal polarization configurations. The magnetic field dependence α(B) can be derived by considering the Lorentz force. In a 2D case, the kinetic equations for electrons driven by a radiation field can be written classically as{x¨+γx˙+ω02x+eBmy˙+emEeiωt=0y¨+γy˙+ω02yeBmx˙=0,[1]where E is the electric field vector of incident light along the x direction (i.e., ei || x) and Lorentz forces are taken into account. The parameters e, m, B, ω, ω0, and γ are the charge, effective mass of electron, the magnetic field, the frequency of incident light, the restoring frequency of excited electrons, and the damping factor (scattering rate), respectively.For electrons, a magnetic field normal to the sample plane breaks the vertical mirror symmetry and the horizontal twofold symmetry. Hence, the corresponding Raman tensors, whose elements are normally the derivatives of α, should have a lower symmetry when a magnetic field is applied. A detailed analysis of the Raman tensors can be found in Supporting Information. The Raman intensities of A- and E-modes for ei?∥?es (xx) and ei ⊥ es (xy) configurations can be expressed asIxxE2g=IxyE2gh2|BB02+B2|2+f2|B0B02+B2|2[2]IxxAga2|B0B02+B2|2;IxyAgc2|B0B02+B2|2,[3]where B0=mγe(1iω02ω2ωγ), which can be viewed as a resonance-like field at which the effect of magnetic field on phonon intensity approaches a maximum. Here a, c, h, and f are the parameters of the Raman tensor elements, which are proportional to the derivatives of susceptibility with respect to lattice normal coordinates. As shown in Eq. 2, the E2g intensities exhibit the same magnetic-field dependence in both polarization configurations. Furthermore, E-mode has twofold degeneracy (11) so that its intensity in Eq. 2 includes two terms that compensate each other with the field (see Fig. S4 for fitting results of E-mode). This explains why the observed magnetic-field dependence of the E2g intensities is relatively weak. In sharp contrast, as shown in Eq. 3, the nondegenerate A-mode has field- and polarization-dependent intensity. For each sample, we have performed a fitting for the A-mode intensity with a single set of B0 parameters in both ei?∥?es and ei ⊥ es configurations. The results are shown in Fig. 3. Excellent agreement between the theoretical curve and experimental data for all three samples is obtained (see andS2S2 for the details of fitting parameters).Open in a separate windowFig. S4.Experimental (solid dots) and fitted E-mode intensity as a function of applied magnetic field for (A and B) monolayer, (C and D) bilayer, and (E and F) bulk MoS2, and two light polarization configurations, respectively.

Table S1.

Fitting parameters for A-mode using Eq. 3
Sampleac
Monolayer557743
Bilayer7241,229
Bulk1,0011,668
Open in a separate window

Table S2.

Fitting results for the A-mode
SampleReal part of B0 m*γ/e = 1/μ, TImaginary part of B0, TMobility μ, cm2/V·sEffective mass, m* (me) (33)γ (1/s)
Monolayer5.13.61,9600.372.4 × 1012
Bilayer8.901,124
Bulk10.509500.473.9 × 1012
Open in a separate windowThe real part of B0, mγ/e, is the reciprocal of the mobility (i.e., 1/μ). Thus, optical mobility can be extracted from analyzing the Raman scattering process because the intermediate state for electron hopping in a Raman process exists in the real conduction bands (19). We have determined both the real part and imaginary part of B0 by fitting the field dependence of Raman intensities to the model functions given in Eq. 3 (Fig. 3). The value of the real part of B0 is 5.1, 8.9, and 10.5 T for monolayer, bilayer, and bulk MoS2, respectively (Fig. S5 and 20) (Fig. S6). Note that the values of the optical mobility determined in the present work are much larger than those measured using transport measurements (2125) but similar to the values obtained in a high-k HfO2 gated field-emission transistor (20, 26). Furthermore, our results are also greater than the calculated phonon-scattering-limited value of ∼400 cm2/V·s (27). The optical mobility data obtained with the present method should be a good measure of intrinsic scattering processes because of the effective exclusion of grain-boundary/impurity scattering (28).Open in a separate windowFig. S5.Fitting the intensities of monolayer MoS2 in parallel configuration with (purple) and without (green) the imaginary part of B0.Open in a separate windowFig. S6.Intensity evolution of the A- and E-mode in monolayer MoS2 under magnetic fields at (A) 70 K, (B) 150 K, and (C) 300 K. (DF) The magnetic-field dependence of A-mode integrated intensities at three temperatures is summarized, where the solid lines are the fitting curves.Because the measured Raman intensity corresponds to the intensity of inelastically scattered light, our observations indicate that the intensity difference of the scattered light between the parallel and perpendicular polarization configurations can be precisely tuned by using magnetic field. This effect can be regarded as a “giant” magneto-optical effect. We define a polarization between the two polarization configurations, which is similar to the valley polarization (6, 7), as shown in Fig. 3 DF, and the slope of each curve is a measure of the sensitivity of the light intensity to magnetic field. The polarization goes up to 80% at low fields and its slope reaches 25% per tesla at intermediate fields. This quantitatively demonstrates the remarkable efficiency of the polarization manipulation by magnetic fields. Because the effect described above is symmetry-based and material-independent, it should have potential technological applications in magneto-optical devices. We have proposed a prototype layout based on the effect, as illustrated in Fig. S7. In general, the weak intensity of the inelastically scattered light posts a challenge for applications. With the observed giant magneto-optical effect, this issue may be resolved by identifying high-intensity modes in a material and/or employing the surface-enhanced Raman technique and coherent Stokes/anti-Stokes Raman scattering (29).Open in a separate windowFig. S7.Schematic diagram of the magnetic-field-modulated Raman effect, which shows a prototype layout for possible new magneto-optical applications in read heads, sensors, and optical switches. A band-pass filter is used to filter out non-Raman-scattered light, and a Wollaston prism is used to separate the scattered light into two polarization channels.Finally, we would like to point out the unique behavior of monolayer MoS2. Zeng et al. (30) showed that integrated intensity of the A-mode gradually decreases with reduced thickness from the bulk but suddenly increases in a monolayer sample. This gives an apparently lower integrated intensity of A-mode in the bilayer than in the monolayer or bulk case (Fig. 3 AC and Fig. S1). The most likely origin of this effect is the anomalous behavior of the monolayer (30), both electronically and structurally. MoS2 is an indirect-gap semiconductor from bilayer to bulk but exhibits a direct gap for the monolayer case. The question to be answered is why the monolayer is so different, requiring more experimental measurements and detailed density functional theory calculations.In summary, we have measured the evolution of Raman spectra of monolayer, bilayer, and bulk MoS2 with a magnetic field perpendicular to the layer surface. We find that the A1g/A1′ Raman mode exhibits a giant response to the field with anticorrelated intensity changes in two orthogonally polarized configurations of scattered light. The intensity difference between these two configurations can be controlled and fine-tuned by the magnetic field. This magneto-optical effect stems from a magnetic-field-induced symmetry breaking for the electron motion in the inelastic Raman scattering process; thus, the basic mechanism is material-independent. The present discovery lays a solid foundation for innovative magneto-optical device applications with materials from bulk crystals to single atomic form. It also provides a new approach for the precise measurements of optical mobility in atomically thin films.  相似文献   
7.
Transient left ventricular apical ballooning syndrome was first described in Japan as "Takotsubo cardiomyopathy." This syndrome has been identified in many other countries. Many variations of this syndrome have been recently described in the literature. One of the rarest is the reverse type of this syndrome, with hyperdynamic apex and complete akinesia of the base (as opposed to the classic apical ballooning). In this article, we report an interesting case of a young woman who presented with this rare type of reverse apical ballooning syndrome occurring after amphetamine use. This report is followed by review of the literature.  相似文献   
8.
Wire breakage during percutaneous coronary intervention is a rare event. It occurs especially when treating complex lesions, and it should be prevented with careful planning of each procedural step. We reported a case in which wire breakage occurred when treating the left anterior descending (LAD)/first diagonal bifurcation with the T‐stenting technique. After careful evaluation of all the available retrieval techniques and failure of the balloon–catheter trapping, the twin‐twisting wires technique (TTWT) was applied. This technique allows the retrieval of a foreign body thanks to its entrapment in the spiral made by two twisting wires. At the first attempt, the broken wire was only withdrawn and not retrieved, while the two twisting wires went broken. The second attempt was performed using stronger wires as twisting wires. The two recently broken fragments were successfully retrieved together with a long proximal remnant of the initially broken wire, which distal tip was further withdrawn. The broken wire was successfully retrieved with the third attempt, together with the previously implanted LAD stent that was accidentally entrapped in the twist. This is the first report of TTWT implementation for the retrieval of a broken wire from a two‐stent bifurcation, both proximal and distal wire remnants and a total of three broken wires. The improvements we made to the technique, tips and tricks, caveats, and suggestions for successful wire retrieval and avoidance of the complications that we experienced are described in detail.  相似文献   
9.
目的:评价锥体束CT(CBCT)结合显微超声技术处理根管内折断器械的临床疗效。方法:选取济宁医学院附属医院口腔科2012年9月~2013年6月初次根管治疗中出现的器械折断病例24例,对患牙CBCT扫描,进行三维重建,对折断器械的根管进行三维定位及评估,制定临床决策,实施断械取出,计算取出率。结果:CBCT能准确定位断械所在根管,清晰显示根管形态、弯曲度、折断器械位置及周围牙本质厚度。24例断械病例中,20例选择取出治疗,其中16例成功取出,4例未能取出,成功率为80%。4例因折断器械均位于根尖部,弯曲根管下段,且周围牙本质薄弱不选择取出治疗。结论:CBCT结合显微超声技术为临床上评估及取出根管内器械折断病例提供了有效方法。  相似文献   
10.
目的比较显微内窥镜下椎间盘切除术(Microendoscopic Discectomy,MED)与开放椎板开窗(Open Discectomy,OD)治疗腰椎间盘突出并椎体后缘离断症的手术方法、疗效及优缺点。方法对自2007-06-2013-12在本院因腰椎间盘突出并椎体后缘骨骺离断行手术治疗的52例患者(MED组、开窗组各26例)资料进行回顾性分析。结果疗效按Nakai评价标准,分优、良、可、差四级,两组术后优良率无统计学意义,两组术中切除椎板骨量、术中出血、手术时间、术后卧床时间、术后住院时间差异有统计学意义(P0.05),MED组优于椎板开窗组。结论在严格掌握手术指征的基础上,MED治疗腰椎间盘突出并椎体后缘骨骺离断症具有切口小、损伤小、疗程短,有效防止术后脊柱失稳等优点。  相似文献   
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