锐钛型TiO_2性能研究 Ⅱ.锐钛型TiO_2的光化学活性封闭及其表征

用水热法ＳｉＯ２致密包覆封闭锐钛型ＴｉＯ２表面的光化学活性点,以Ｃｒ２Ｏ２－７的还原反应考察包覆层的致密性及包覆效果。讨论了ＴｉＯ２浆液的浓度、温度、ｐＨ及保温熟化等反应条件对ＳｉＯ２致密包覆的影响。     

纳米银应用于软衬材料的抗菌性实验研究

目的评价热固化型硅橡胶软衬材料中加入纳米银颗粒后的抗菌效果及对软衬剂和基托树脂结合强度的影响。方法体外实验对比热固化型硅橡胶软衬剂lucisoft分别添加纳米银颗粒、制霉菌素、米康唑制成标准试件后1周、2周、3周通过培养方法监测软衬剂对白色念珠菌抗菌性及时相关系,用电子万能材料测试机检测添加纳米银颗粒后粘结强度的变化。结果热固化型硅橡胶软衬剂lucisoft加入纳米银前后抗菌效果有明显差异(P<0.01),抗菌性随时间无明显改变(P>0.05),加入制霉菌素,米康唑后抗菌效果有明显差异(P<0.01),但随时间变化抗菌性明显减低(P<0.01),软衬剂中加入纳米银前后结合强度无明显改变(P>0.05)。结论在热固化型橡胶软衬材料中加入纳米银颗粒后的抗菌性及时效明显提高,软衬剂和基托树脂粘结强度未受影响,提示热固化型硅橡胶软衬材料中加入纳米银颗粒可作为预防义齿性口炎的积极措施。     

外源硅对不同程度盐胁迫下甘草种子萌发和幼苗生长发育的影响

目的 通过室内水培试验研究硅对不同程度盐胁迫下甘草种子萌发出苗和幼苗生长发育的影响效应。方法 盐胁迫设置轻度（50 mmol/L）、中度（100 mmol/L）和重度（150 mmol/L）3个梯度,硅源采用K₂SiO₃,硅处理浓度设置0、1、2、4、6、8 mmol/L共6个梯度,共计18个处理,同时设置蒸馏水为对照（CK）。结果 轻度和中度盐胁迫下,较低浓度的硅对甘草种子发芽率、发芽指数、出苗率和幼苗胚根长度没有显著影响,但对株高、根干质量、芽干质量和幼苗活力指数均有显著的促进作用;而高浓度的硅对种子萌发出苗和幼苗生长均具有显著抑制作用。在重度盐胁迫下,较低浓度的外源硅对甘草种子发芽出苗（发芽率、出苗率、发芽指数、幼苗活力指数）及幼苗生长（胚根长度和质量、胚芽长度和质量）均有显著的促进作用,但高浓度的外源硅对甘草幼苗生长有显著的抑制作用。结论 硅至少直接参与了甘草种子萌发出苗和幼苗生长的生理生化过程,且对甘草的盐害有一定的缓解作用,这种缓解作用强度因盐胁迫程度和硅浓度而异。     

Elastic Moduli of Non-Chiral Singe-Walled Silicon Carbide Nanotubes: Numerical Simulation Study

Silicon carbide nanotubes (SiCNTs) have generated significant research interest due to their potential use in the fabrication of electronic and optoelectronic nanodevices and biosensors. The exceptional chemical, electrical and thermal properties of SiCNTs are beneficial for their application in high-temperature and harsh-environments. In view of the limited thermal stability of carbon nanotubes, they can be replaced by silicon carbide nanotubes in reinforced composites, developed for operations at high temperatures. However, fundamentally theoretical studies of the mechanical properties of the silicon carbide nanotubes are at an early stage and their results are still insufficient for designing and exploiting appropriate nanodevices based on SiCNTs and reinforced composites. In this context, the present study deals with the determination of Young’s and shear moduli of non-chiral single-walled silicon carbide nanotubes, using a three-dimensional finite element model.     

Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates

In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms. As a result of atom substitution, the initially smooth Si(110) surface transforms into a SiC surface covered with octahedron-shaped structures having the SiC(111) and SiC(111¯) facets. The SiC(111)/(111¯) facets forming the angle of 35.3° with the original Si(110) surface act as “substrates” for further growth of semipolar AlN. The structure and morphology of AlN films are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), reflection high-energy electron diffraction (RHEED) and Raman spectroscopy. It is found that the AlN layers are formed by merged hexagonal microcrystals growing in two directions, and the following relation is approximately satisfied for both crystal orientations: AlN(101¯3)||Si(110). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the AlN(101¯3) diffraction peak averaged over the sample area is about 20 arcmin. A theoretical model explaining the presence of two orientations of AlN films on hybrid SiC/Si(110) substrates is proposed, and a method for controlling their orientation is presented.     

Femtosecond Laser Fabrication of Anisotropic Structures in Phosphorus- and Boron-Doped Amorphous Silicon Films

Femtosecond laser-modified amorphous silicon (a-Si) films with optical and electrical anisotropy have perspective polarization-sensitive applications in optics, photovoltaics, and sensors. We demonstrate the formation of one-dimensional femtosecond laser-induced periodic surface structures (LIPSS) on the surface of phosphorus- (n-a-Si) and boron-doped (p-a-Si) amorphous silicon films. The LIPSS are orthogonal to the laser polarization, and their period decreases from 1.1 ± 0.1 µm to 0.84 ± 0.07 µm for p-a-Si and from 1.06 ± 0.03 to 0.98 ± 0.01 for n-a-Si when the number of laser pulses per unit area increases from 30 to 120. Raman spectra analysis indicates nonuniform nanocrystallization of the irradiated films, with the nanocrystalline Si phase volume fraction decreasing with depth from ~80 to ~40% for p-a-Si and from ~20 to ~10% for n-a-Si. LIPSS’ depolarizing effect, excessive ablation of the film between LIPSS ridges, as well as anisotropic crystalline phase distribution within the film lead to the emergence of conductivity anisotropy of up to 1 order for irradiated films. Current–voltage characteristic nonlinearity observed for modified p-a-Si samples may be associated with the presence of both the crystalline and amorphous phases, resulting in the formation of potential barriers for the in-plane carrier transport and Schottky barriers at the electric contacts.     

Study on Purification Technology of Silicon Carbide Crystal Growth Powder

Silicon carbide (SiC) is a wide-bandgap (WBG) semiconductor material, and its preparation process has strict requirements on the purity of raw materials. A self-developed medium-frequency induction heating furnace was used to carry out powder heat treatment and purification experiments on SiC powder to improve the purity of the powder. Samples with 3.5N purity were analyzed using XRD and GDMS characterization methods. It was found that under conditions of high-temperature (2200 °C) and long-time (50 h) processing, the impurity removal effect was quite good, but the powder loss was as high as 53.42%. The powder loss during the low-temperature (less than 2050 °C) and short-time process was less than 1.5%, but the purification effect was not substantial. After a prolonged processing time, the purification effect of low-temperature heat treatment conditions was improved, but the powder loss was also increased to 30%. In contrast, segmented purification processing at a low temperature in the early stage and a high temperature in the later stage achieved a good purification effect. On the premise of maintaining the utilization rate of raw materials, a 5N-purity SiC source was successfully prepared. The test results show that the contents of free Si, free C and free oxygen impurities were reduced to less than 0.01%, and the contents of Al, B, Fe, Mg, Na, Ti and other impurities were less than 1.15 ppm, which is close to the ppb level.     

Transient Magnetic Properties of Non-Grain Oriented Silicon Steel under Multi-Physics Field

High-speed, high-efficiency and high-power density are the main development trends of high-performance motors in the future. At present, the design accuracy of traditional electric machines is already high enough; however, for the future demand of high performance and utilization in special environments (such as aviation and aerospace fields), more thorough research of materials’ performance under multi-physics field (MPF) conditions is still needed. In this paper, a test system that combined temperature, stress and electromagnetic fields along with other fields, at the same time, is built. It can accurately simulate the actual complex working conditions of the motor and explore the dynamic characteristics of non-grain oriented (NGO) silicon steel. The rationality of this method is verified by checking the test result of the prototype, and the calculation accuracy of the motor model is improved.     

Thermal Properties of Porous Silicon Nanomaterials

The thermal properties, including the heat capacity, thermal conductivity, effusivity, diffusivity, and phonon density of states of silicon-based nanomaterials are analyzed using a molecular dynamics calculation. These quantities are calculated in more detail for bulk silicon, porous silicon, and a silicon aerocrystal (aerogel), including the passivation of the porous internal surfaces with hydrogen, hydroxide, and oxygen ions. It is found that the heat capacity of these materials increases monotonically by up to 30% with an increase in the area of the porous inner surface and upon its passivation with these ions. This phenomenon is explained by a shift of the phonon density of states of the materials under study to the low-frequency region. In addition, it is shown that the thermal conductivity of the investigated materials depends on the degree of their porosity and can be changed significantly upon the passivation of their inner surface with different ions. It is demonstrated that, in the various simulated types of porous silicon, the thermal conductivity changes by 1–2 orders of magnitude compared with the value for bulk silicon. At the same time, it is found that the nature of the passivation of the internal nanosilicon surfaces affects the thermal conductivity. For example, the passivation of the surfaces with hydrogen does not significantly change this parameter, whereas a passivation with oxygen ions reduces it by a factor of two on average, and passivation with hydroxyl ions increases the thermal conductivity by a factor of 2–3. Similar trends are observed for the thermal effusivities and diffusivities of all the types of nanoporous silicon under passivation, but, in that case, the changes are weaker (by a factor of 1.5–2). The ways of tuning the thermal properties of the new nanostructured materials are outlined, which is important for their application.     

Photocatalytic Activity of Silicon Nanowires Decorated with PbS Nanoparticles Deposited by Pulsed Laser Deposition for Efficient Wastewater Treatment

The present work aims to study the photocatalytic properties of nanohybrids composed of silicon nanowires (SiNWs) decorated with PbS nanoparticles (NPs). The elaborated material was intended to be utilized in wastewater treatment. The SiNWs were elaborated from the Metal Assisted Chemical Etching route (MACE), while the PbS NPs were deposited at room temperature onto SiNWs using the pulsed laser deposition (PLD) technique. The influence of decorating SiNWs (having different lengths) with PbS-NPs on their structural, morphological, optoelectronic, and photocatalytic properties was scrutinized. PbS/SiNWs nanohybrids exhibited enhanced photocatalytic degradation towards Black Amido (BA) dye for 20 µm SiNWs length and 0.2% of BA volume concentration. These optimized conditions may insinuate that this nanocomposite-like structure is a promising efficient photocatalytic systems contender, cost-effective, and recyclable for organic compound purification from wastewaters.