晕可宁颗粒对急、慢性梅尼埃病模型的影响

目的　探讨晕可宁颗粒的主要药效学 ,为临床提供药效学资料及治疗学基础。方法　采用三氯甲烷破坏豚鼠一侧膜迷路感受器模型 ,探讨受试药对眼震颤、摆头及旋转的影响 ;采用内淋巴囊和内淋巴管阻塞手术复制豚鼠膜迷路实验性膜迷路积水模型 ,研究内耳组织平均中阶面积 (SMA)增加率及形态学的变化。结果　抑眩宁阳性对照组、晕可宁颗粒 (8、16g/kg)模型给药组豚鼠眼球震颤次数减少 ,差异有显著意义 (P <0 .0 5 )。成功复制了不同程度膜迷路积水豚鼠模型 ,表现为前庭膜重度膨出 ,前庭阶缩小 ,膜蜗管增大 ,SMA增加率变大 ,差异有显著意义 (P <0 .0 1) ;晕可宁颗粒灌胃后可减轻豚鼠实验性膜迷路积水的程度 ,差异有显著意义 (P <0 .0 1) ;但与空白对照组比较SMA增加率差异无显著意义 (P >0 .0 5 )。结论　晕可宁颗粒可以减轻内淋巴囊积水程度 ,对梅尼埃病症状有对抗治疗作用。     

Migration and chemical modification of silicone in women with breast prostheses

Studies using magnetic resonance spectroscopy in human volunteers to evaluate their livers in vivo and to analyze their blood in vitro suggest that there are measurable amounts of silicon compounds in the blood of some women with implants and that there is migration of silicone to other organs such as the liver.     

四君子汤改善抗生素脱污染小鼠肠道菌群失调的研究

目的：研究中药四君子汤对肠道菌群失调小鼠的调节作用。方法：小鼠经盐酸林可霉素灌肠造成菌群失调模型。将小鼠分自然恢复组。丽珠肠乐组，四君子汤组，治疗后，进行组织病理学和肠道菌群检测。结果：四君子汤组中肠道菌群最大幅度增加，与自然恢复组相比差异显。肠道粘膜损伤修复比自然恢复组好。结论：四君子汤能够促进肠粘膜损伤修复。调节肠道菌群失调。是一种理想的微生态调节剂。     

Insulin sensitivity (Si) assessment in lean and overweight subjects using two different protocols and updated software

Abstract

Background. The standard frequently-sampled intravenous glucose tolerance test (FSIVGTT) is an alternative procedure to the clamp technique for estimating the insulin sensitivity (Si) parameter. The goal of this study was to compare Si in lean and overweight individuals in addition to assessing intra-individual reproducibility using two different protocols and updated software. Methods. FSIVGTT was carried out in 14 lean (BMI ≤ 25 kg/m²) and 14 overweight (BMI>25 kg/m²) subjects using two different protocols; full (29 samples) and short (12 samples). For reproducibility assessment four normal subjects (triplicate on three and twice on one) were recruited to undergo the same procedure at 1-week intervals. Data analysis was performed using COMAL and Minmod Millennium software. Results. Mean Si (10^?4min^?1[pmol/l]^?1) values were significantly different between lean and overweight subjects (p < 0.001) but not between the two protocols using both software packages. For the full and short protocols, Si values were more closely related in lean versus overweight subjects using either COMAL (r = 0.98, p < 0.001), (r = 0.89, p < 0.001) or Minmod Millennium (r = 0.99, p < 0.001), (r = 0.85, p < 0.001) software respectively. The intra-individual reproducibility (%CV) of Si (COMAL) in full versus short protocol was 18.3 ± 11.1% and 13.7 ± 1.9% respectively. Reproducibility values for Si (Minmod Millenium) in full versus short protocols were 14.3 ± 3.8 and 14.9 ± 1.9% respectively. Conclusions. Si can be assessed accurately by a short protocol FSIVGTT in normal individuals. The short protocol may give less acceptable results for insulin sensitivity in individuals who have normal glucose tolerance but high BMI.     

Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers

Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.     

白热斯油处方搽剂及其组分对人G-361细胞活力与产生黑色素能力的影响

探讨维吾尔医白热斯油处方搽剂及其单味药、即:补骨脂、白花丹、黄芥子、黑种草子和駆虫斑鳩菊生药材水提物等通过对G-361细胞存活率、增殖以及黑色素产生的影响。对维医白癜风专用12种处方水提物进行酪氨酸酶激活实验、根据激活率(OD值)进行排序并定位。用MTT法检测不同浓度白热斯油处方搽剂及其组分药材水提物、对G-361细胞72 h细胞存活率、增值以及黑色素产生进行观测。经检测、对维吾尔医12种治疗白癜风专用药材水提物酪氨酸酶激活率超出200%的有4个专用处方、白热斯油为第3位,高于其它9种处方(P<0.001)。各药材及各浓度72 h培养细胞存活率与对照组之间相比无显著性差异(P>0.05)。72 h培养细胞增殖和黑素产生能力与对照组相比有显著性差异、分别为P<0.05和P<0.01、而且最佳浓度集中在125μg/m L和62.5μg/m L、其中后者较为稳定。白热斯油处方及其组分药材水提物在适宜浓度,对72 h培养G-361细胞有增殖作用、使黑色素含量增加、且细胞存活率正常、未发现明显的细胞毒性作用。     

Effect of Al–5Ti–C Master Alloy on the Microstructure and Mechanical Properties of Hypereutectic Al–20%Si Alloy

Al–5Ti–C master alloy was prepared and used to modify hypereutectic Al–20%Si alloy. The microstructure evolution and mechanical properties of hypereutectic Al–20%Si alloy with Al–5Ti–C master alloy additions (0, 0.4, 0.6, 1.0, 1.6 and 2.0 wt%) were investigated. The results show that, Al–5Ti–C master alloy (0.6 wt%, 10 min) can significantly refine both eutectic and primary Si of hypereutectic Al–20%Si alloy. The morphology of the primary Si crystals was significantly refined from a coarse polygonal and star-like shape to a fine polyhedral shape and the grain size of the primary Si was refined from roughly 90–120 μm to 20–50 μm. The eutectic Si phases were modified from a coarse platelet-like/needle-like structure to a fine fibrous structure with discrete particles. The Al–5Ti–C master alloy (0.6 wt%, 30 min) still has a good refinement effect. The ultimate tensile strength (UTS), elongation (El) and Brinell hardness (HB) of Al–20%Si alloy modified by the Al–5Ti–C master alloy (0.6 wt%, 10 min) increased by roughly 65%, 70% and 51%, respectively, due to decreasing the size and changing the morphology on the primary and eutectic Si crystals. The change in mechanical properties corresponds to evolution of the microstructure.     

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si heterostructure interface were mapped by using the geometric phase analysis (GPA) and peak pairs analysis (PPA), respectively. The effect of the mask size on the GPA and PPA results was analyzed in detail. For comparison, the theoretical strain fields of the misfit dislocations were also calculated by the Peierls-Nabarro and Foreman dislocation models. The results showed that the optimal mask sizes in GPA and PPA were approximately three tenths and one-tenth of the reciprocal lattice vector, respectively. The Foreman dislocation model with an alterable factor a = 4 can best describe the strain field of the misfit dislocation at the Ge/Si heterostructure interface.     

Joining of Hypereutectic Al-50Si Alloys Using Lead-Free Brazing Filler Glass in Air

Hypereutectic Al-Si alloys are attractive materials in the fields of electronic packaging and aerospace. A Bi₂O₃-ZnO-B₂O₃ system lead-free brazing filler glass was employed to braze hypereutectic Al-50Si alloys in air. The hypereutectic Al-50Si alloys were pre-oxidized and the low-temperature glass powder was flake-shaped in the brazing process. The effects of brazing temperature and time on joints microstructure evolution, resulting mechanical strength, and air tightness were systematically investigated. The results indicated that the maximum shear strength of the joint was 34.49 MPa and leakage rate was 1.0 × 10⁻¹⁰ Pa m³/s at a temperature of 495 °C for 30 min. Crystalline phases, including Bi₂₄B₂O₃₉ and Bi₂O₃, were generated in the glass joint. The formation of a diffusion transition layer with a thickness of 3 μm, including elements of Al, Si, Zn, Bi, Na, and B, was the key to form an effective joint. The elements of Al, Si, and Bi had a short diffusion distance while the elements of Zn, Na, and B diffused in a long way under brazing condition.     

Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during epitaxial growth. 3C-SiC nucleation is proposed to trigger the formation of 3C inclusions. We suppressed 3C-inclusion formation by performing deep in situ etching and using a high C/Si ratio, which removed substrate surface damage and improved the 4H-SiC stability, respectively. The as-grown epitaxial layers had rough surfaces because of step bunching due to the deep in situ etching, but the rough surface became smooth after chemical mechanical polishing treatment. These techniques allow the growth of epitaxial layers with 1° off-angles for a wide range of doping concentrations.