Dimension AR全自动生化分析仪CO_2电极测血清总CO_2的应用及评价

目的:探讨Dimension AR全自动生化分析仪CO2电极测血清总CO2(TCO2)的应用及评价。方法:用Dimension AR全自动生化分析仪CO2电极检测血清TCO2。结果:用Dimension AR全自动生化分析仪CO2电极检测血清TCO2线性范围4.0mmol/L~48.0mmol/L;平均回收率99.6%;批内CV:低TCO2含量标本为1.61%,高TCO2含量标本为2.42%;批间CV:低值标本为3.38%,高值标本4.01%;与CO2酶法比较,r=0.9997,t=1.262,P>0.05;当TBIL<448.0umol/L、TG<23.8umol/L、HB<5g/L时,对测定结果无影响。结论:用Dimension AR全自动生化分析仪CO2电极检测血清TCO2准确、快速、稳定,具有很好的临床应用价值。     

国产GY—93型二氧化碳库仑滴定仪测定血清TCO2的方法学评价

探讨国产ＧＹ－９３型二氧化碳库仑滴定仪测定血清ＴＣＯ２的临床实用性。方法：使用该仪器测定一系列血清样本并与离子选择性电极法和手工酸碱滴定法的测定结果进行统计学比较。结果：库仑法在５～６０ｍｍｏｌ／Ｌ范围内有良好的线性，批内重现性高于酸碱滴定法（Ｐ＜０．０１）与电极法相当（Ｐ＞０．０５），批间重复性较差（ＣＶ＝９．８％），库仑法与电极法相关性较好ｒ＝０．９２。结论：该仪器批内精密度优于酸碱滴定法，但稳定性不够好，使得仪器的长期使用受限，尚需进一步完善。     

The Effects of Zr Doping on the Optical,Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

Transparent conducting oxides (TCOs), with high optical transparency (≥85%) and low electrical resistivity (10⁻⁴ Ω·cm) are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin oxide with lower cost, earth abundant materials. In the current study, we dope Zr into thin ZnO films grown by atomic layer deposition (ALD) to target properties of an efficient TCO. The effects of doping (0–10 at.% Zr) were investigated for ~100 nm thick films and the effect of thickness on the properties was investigated for 50–250 nm thick films. The addition of Zr⁴⁺ ions acting as electron donors showed reduced resistivity (1.44 × 10⁻³ Ω·cm), increased carrier density (3.81 × 10²⁰ cm⁻³), and increased optical gap (3.5 eV) with 4.8 at.% doping. The increase of film thickness to 250 nm reduced the electron carrier/photon scattering leading to a further reduction of resistivity to 7.5 × 10⁻⁴ Ω·cm and an average optical transparency in the visible/near infrared (IR) range up to 91%. The improved n-type properties of ZnO: Zr films are promising for TCO applications after reaching the targets for high carrier density (>10²⁰ cm⁻³), low resistivity in the order of 10⁻⁴ Ω·cm and high optical transparency (≥85%).     

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

In this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2 at.%, and (Al, Ga)-co-doped ZnO with doping levels of 1 and 2 at.% for each impurity metal. The dependencies of sheet resistance, carrier concentration, and Hall mobility on the substrate temperature were studied for the deposited films. The results of evaluating the electrical performances of the films were compared with the data of their XRD study. According to the XRD data, among all the deposited ZnO films, the maximum crystallinity was found in the co-doped thin film with doping levels of 2 at.% for each impurity metal, deposited at a substrate temperature of 300 °C. It was revealed that the observed increase in the Hall mobility and carrier concentration for the co-doped films may, in particular, be due to the difference in the preferred localization of Ga and Al impurities in the ZnO film: the Ga ions were mainly incorporated into the crystal lattice of ZnO nanocrystallites, while the Al impurity was mostly localized in the intercrystalline space at the grain boundaries.     

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10⁻⁴ Ω/cm), carrier concentration (4.1 × 10²¹ cm⁻³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10²¹ cm⁻³) with a high figure of merit (81.1 × 10⁻³ Ω⁻¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.     

Reverse restriction fragment length polymorphism (RRFLP): A novel technique for genotyping infectious laryngotracheitis virus (ILTV) live attenuated vaccines

A novel technique, the reverse restriction fragment length polymorphism (RRFLP) assay, was developed as a means of detecting specific informative polymorphic sites in the infectious laryngotracheitis virus (ILTV) genome. During the RRFLP procedure, DNA is digested with restriction enzymes targeting an informative polymorphic site and then used as template in a real-time polymerase chain reaction (PCR) with primers flanking the informative region. The analysis of the ΔC_t values obtained from digested and undigested template DNA provides the genotype of the DNA. In this study, the RRFLP assay was applied as a method to differentiate between the two types of infectious laryngotracheitis virus attenuated live vaccines. Sequence analysis of ILTV vaccines revealed an informative polymorphic site in the 5′-non-coding region of the infected cell protein (ICP4) gene. Unique AvaI and AlwI restriction enzyme sites were identified in the tissue culture origin and chicken embryo origin attenuated vaccines, respectively. These two informative polymorphic sites were used in a RRFLP assay to genotype rapidly and reproducibly ILTV attenuated live vaccines.     

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In₂O₃) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In₂O₃ content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In₂O₃) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.     

Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

Well-ordered 3D mesoporous indium tin oxide (ITO) films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO) on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs). Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene)-b-poly(ethylene oxide) block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs.     

Mutant MYO1F alters the mitochondrial network and induces tumor proliferation in thyroid cancer

Familial aggregation is a significant risk factor for the development of thyroid cancer and familial non‐medullary thyroid cancer (FNMTC) accounts for 5–7% of all NMTC. Whole exome sequencing analysis in the family affected by FNMTC with oncocytic features where our group previously identified a predisposing locus on chromosome 19p13.2, revealed a novel heterozygous mutation (c.400G > A, NM_012335; p.Gly134Ser) in exon 5 of MYO1F, mapping to the linkage locus. In the thyroid FRTL‐5 cell model stably expressing the mutant MYO1F p.Gly134Ser protein, we observed an altered mitochondrial network, with increased mitochondrial mass and a significant increase in both intracellular and extracellular reactive oxygen species, compared to cells expressing the wild‐type (wt) protein or carrying the empty vector. The mutation conferred a significant advantage in colony formation, invasion and anchorage‐independent growth. These data were corroborated by in vivo studies in zebrafish, since we demonstrated that the mutant MYO1F p.Gly134Ser, when overexpressed, can induce proliferation in whole vertebrate embryos, compared to the wt one. MYO1F screening in additional 192 FNMTC families identified another variant in exon 7, which leads to exon skipping, and is predicted to alter the ATP‐binding domain in MYO1F. Our study identified for the first time a role for MYO1F in NMTC.     

基于TCO理论的医院采购成本分析初探

在当前竞争激烈的医疗市场下，成本管理是极为有效的战略武器，文章通过TCO（总所有权成本）理论在医院采购成本中的应用，从供应商选择、供应商后续考评及内部业务流程重构3方面进行了探讨，以求得出医院采购成本管理最佳模式。