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Testicular Toxicity of Gallium Arsenide, Indium Arsenide, and Arsenic Oxide in Rats by Repetitive Intratracheal Instillation 总被引:1,自引:1,他引:0
OMURA MINORU; TANAKA AKIYO; HIRATA MIYUKI; ZHAO MANGEN; MAKITA YUJI; INOUE NAOHIDE; GOTOH KAORU; ISHINISHI NOBURU 《Toxicological sciences》1996,32(1):72-78
The testicular toxicities of two compound semiconductor materials,gallium arsenide (GaAs) and indium arsenide (InAs), and arsenicoxide (As2O3) were examined in rats by repetitive intratrachealinstillation of these substances in suspension twice a week,a total of 16 times. A single instillation dose was 7.7 mg/kgin the GaAs and the InAs groups and 1.3 mg/kg in the As2O3 group.A significant decrease in sperm count and significant increasein the proportion of morphologically abnormal sperm were foundin the epididymis in the GaAs group. Especially, abnormal spermwith a straight head increased markedly in this group. In theGaAstreated rats, there was 40-fold increase in the degeneratinglate elongated spermatids at the postspermiation stages, stagesIX, XI, and XI. From these results, it is indicated that GaAsdisturbed the spermatid head transformation at the late spermiogenicphases and caused spermiation failure. InAs caused a sperm countdecrease in the epididymis, though its testicular toxicity wasrelatively weak compared with that of GaAs. As2O3, a probabledissolution arsenic product of GaAs and InAs in vivo, did notshow any testicular toxicities in this study. It seems likelythat, along with arsenics, gallium and indium play a role inthe testicular toxicities of GaAs and InAs. 相似文献
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