Ovarian microcystic stromal tumor: A novel extracolonic tumor in familial adenomatous polyposis

Ovarian microcystic stromal tumor (MCST) is a very rare neoplasm; hence, its nomenclature was recently designated as “Distinctive morphologic and immunohistochemical features” in 2009. Its exact origin, etiological genetic alterations, and background are not yet clearly known. Familial adenomatous polyposis (FAP) is an autosomal dominant disease that leads to development of colorectal polyps via germ‐line mutations of the APC gene on chromosome 5q21～22. In this study, we report a 40‐year‐old female patient who had ovarian MCST and FAP. On sequencing the APC gene in ovarian MSCT, we detected a novel somatic mutation of the APC gene in exon 11, with a heterozygous deletion at nucleotide position c.1540delG (p.Ala514 Profs*9). Mutations of β‐catenin (CTNNB1) and FOXL2 were not detected. Although one case demonstrating involvement of Wnt/β‐catenin in ovarian MCST associated with FAP has been presented previously, no detailed information was provided. Thus, this is the ovarian MCST with a somatic mutation of APC in a patient with FAP. © 2015 Wiley Periodicals, Inc.     

High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

Highly moisture permeation resistive and transparent single layer thin films for the encapsulation of hydrogenated silicon oxynitrides (H:SiON) were deposited by plasma-enhanced chemical vapor deposition (PECVD) using silane (SiH₄), nitrous oxide (N₂O), ammonia (NH₃), and hydrogen (H₂) at 100 °C for applications to a top-emission organic light-emitting diode (TEOLED). Addition of H₂ into the PECVD process of SiON film deposition afforded the hydrogenated SiON film, which showed not only improved optical properties such as transmittance and reflectance but also better barrier property to water permeation than PECVD SiON and even SiN_x. The H:SiON film with thickness of only 80 nm exhibited water vapor transmission rate (WVTR) lower than 5 × 10⁻⁵ g per m² per day in the test conditions of 38 °C and 100% humidity, where this WVTR is the measurement limit of the MOCON equipment. An additional coating of UV curable polymer enabled the H:SiON films to be flexible and to have very stable barrier property lower than 5 × 10⁻⁵ g per m² per day even after a number of 10k times bending tests at a curvature radius of 1R. The mild H:SiON film process improved the electrical properties of top-emission OLEDs without generating any dark spots. Furthermore, single H:SiON films having high water vapor barrier could maintain the original illumination features of TEOLED longer than 720 hours. These excellent properties of the H:SiON thin films originated from the structural changes of the SiON material by the introduction of hydrogen.

High-performance H:SiON single layer thin film encapsulation (TFE) was deposited by plasma enhanced chemical vapor deposition (PECVD) method. To control the characteristics of the SiON thin films, hydrogen gas was introduced during PECVD process.     

A near-infrared photoinverter based on ZnO and quantum-dots

Near-infrared (NIR) photoswitching transistors have been fabricated using a hybrid structure of zinc oxide (ZnO) and quantum-dots (QDs). The ZnO active layer was prepared using a solution process, while colloidal QDs were inserted between a silicon dioxide (SiO₂) gate insulator and a ZnO active layer. The small band gap QDs (1.59 eV) were used to absorb low-energy NIR photons, generate photo-excited carriers, and inject them into the conduction band of the ZnO film. The device with the interfacial QDs induced photocurrents upon exposure to 780 nm-wavelength light. The photoresponsivity of the ZnO/QD device was 0.06 mA W⁻¹, while that of the device without QDs was 1.7 × 10⁻⁵ mA W⁻¹, which indicated that the small band gap QDs enabled a photo-induced current when exposed to NIR light. Furthermore, a photoinverter was prepared which was composed of a ZnO/QDs phototransistor and a load resistor. Photoswitching characteristics indicated that the photoinverter was well modulated by a periodic light signal of 780 nm in wavelength. The results demonstrate a useful way to fabricate NIR optoelectronics based on ZnO and QDs.

A near-infrared photoinverter was fabricated based on ZnO and quantum-dots. We found that the small band gap quantum-dots could absorb low-energy near-infrared photons, generate photo-excited carriers, and inject them into the conduction band of ZnO.     

Decreased serum level of antibody against human cytomegalovirus in patients with Behçet’s disease

Behçets disease (BD) is a connective tissue disorder characterized by recurrent orogenital ulcer, uveitis, and skin lesions. Recurrent aphthous ulcer is associated with human cytomegalovirus (HCMV). To investigate the possible role of HCMV in BD, we measured the titers of IgG, IgM, and IgA anti-HCMV antibodies in 73 Korean patients with BD, 50 with scleroderma, 70 with systemic lupus erythematosus, and 50 from healthy controls by indirect immunofluorescent staining. The titer of IgG anti-HCMV antibody was significantly lower in patients with BD than in controls (geometric mean 3115.4 vs 9687.6, P=0.0001 by Wilcoxons rank sum test), as was the titer of IgA anti-HCMV antibody (geometric mean 1.9 vs 15.7, P=0.0001, Wilcoxons rank sum test). In conclusion, we found significantly lower antibody responses to HCMV in patients with BD.     

Treatment of verruca vulgaris with topical cidofovir in an immunocompromised patient: a case report and review of the literature

Lesions caused by verrucus vulgaris are commonly refractory to therapy and may become large, painful, or disfiguring in immunocompromised patients. Cidofovir is a potent nucleoside analog antiviral agent shown to have in vitro and in vivo activity against a broad spectrum of DNA viruses. We report a successful use of topical cidofovir to treat verruca vulgaris lesions in a highly immunocompromised patient, who was not considered a candidate for conventional therapy.     

Limitation of the validity of the homeostasis model assessment as an index of insulin resistance in Korea

Homeostasis model assessment of insulin resistance (HOMA-IR) is a less invasive, inexpensive, and less labor-intensive method to measure insulin resistance (IR) as compared with the glucose clamp test. The aim of this study was to evaluate the validity of HOMA-IR by comparing it with the euglycemic clamp test in determining IR. We assessed the validity of HOMA-IR by comparing it with the total glucose disposal rate measured by the 3-hour euglycemic-hyperinsulinemic clamp in subjects with type 2 diabetes (n = 47), impaired glucose tolerance (n = 21), and normal glucose tolerance (n = 22). There was a strong inverse correlation (r = -0.558; P < .001) between the log-transformed HOMA-IR and the total glucose disposal rate. There was moderate agreement between the 2 methods in the categorization according to the IR (weighted kappa = 0.294). The magnitude of the correlation coefficients was smaller in the subjects with a lower body mass index (BMI <25.0 kg/m2 , r = -0.441 vs BMI > or =25.0 kg/m2 , r = -0.615; P = .032), a lower HOMA-beta cell function (HOMA- beta <60.0, r = -0.527 vs HOMA- beta > or =60.0, r = -0.686; P = .016), and higher fasting glucose levels (fasting glucose < or =5.66 mmol/L, r = -0.556 vs fasting glucose >5.66 mmol/L, r = -0.520; P = .039). The limitation of the validity of the HOMA-IR should be carefully considered in subjects with a lower BMI, a lower beta cell function, and high fasting glucose levels such as lean type 2 diabetes mellitus with insulin secretory defects.