Effect of In-Incorporation and Annealing on CuxSe Thin Films

A study of indium-incorporated copper selenide thin-film deposition on a glass substrate using the successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, treatment with copper(II/I) ions, incorporation of indium(III), and annealing in an inert nitrogen atmosphere. The elemental and phasal composition, as well as the morphological and optical properties of obtained films were determined. X-ray diffraction data showed a mixture of various compounds: Se, Cu_0.87Se, In₂Se₃, and CuInSe₂. The obtained films had a dendritic structure, agglomerated and not well-defined grains, and a film thickness of ~90 μm. The band gap values of copper selenide were 1.28–1.30 eV and increased after indium-incorporation and annealing. The optical properties of the formed films correspond to the optical properties of copper selenide and indium selenide semiconductors.     

Nickel Oxide Films Deposited by Sol-Gel Method: Effect of Annealing Temperature on Structural,Optical, and Electrical Properties

In our study, transparent and conductive films of NiO_x were successfully deposited by sol-gel technology. NiO_x films were obtained by spin coating on glass and Si substrates. The vibrational, optical, and electrical properties were studied as a function of the annealing temperatures from 200 to 500 °C. X-ray Photoelectron (XPS) spectroscopy revealed that NiO was formed at the annealing temperature of 400 °C and showed the presence of Ni⁺ states. The optical transparency of the films reached 90% in the visible range for 200 °C treated samples, and it was reduced to 76–78% after high-temperature annealing at 500 °C. The optical band gap of NiOx films was decreased with thermal treatments and the values were in the range of 3.92–3.68 eV. NiO_x thin films have good p-type electrical conductivity with a specific resistivity of about 4.8 × 10⁻³ Ω·cm. This makes these layers suitable for use as wideband semiconductors and as a hole transport layer (HTL) in transparent solar cells.     

Tuning Stoichiometry and Structure of Pd-WO3−x Thin Films for Hydrogen Gas Sensing by High-Power Impulse Magnetron Sputtering

By tuning the deposition parameters of reactive high-power impulse magnetron sputtering, specifically the pulse length, we were able to prepare WO_3−x films with various stoichiometry and structure. Subsequently, the films were annealed in air at moderate temperature (350 °C). We demonstrate that the stoichiometry of the as-deposited films influences considerably the type of crystalline phase formed in the annealed films. The appropriate sub-stoichiometry of the films (approx. WO_2.76) enabled crystallization of the monoclinic phase during the annealing. This phase is favorable for hydrogen sensing applications. To characterize the sensory behavior of the films, the tungsten oxide films were decorated by Pd nanoparticles before annealing and were assembled as a conductometric gas sensor. The sensory response of the films that crystallized in the monoclinic structure was proven to be superior to that of the films containing other phases.     

Annealing Effect on the Structure and Optical Properties of CBD-ZnS Thin Films for Windscreen Coating

Zinc sulfide (ZnS) thin films were prepared and synthesized by the chemical bath deposition (CBD) technique on microscopic glass substrates using stoichiometric amounts of the precursor materials (ZnSO₄·7H₂O, NH₄OH, and CS(NH₂)₂). Structural, morphological, compositional, and optical characterization of the films were studied. The obtained thin films were found to exhibit polycrystalline possessions. The effect of annealing temperature on the crystallographic structure and optical bandgap of ZnS thin films were both examined. The grain size and unit cell volume were both found to be increased. In addition, the strain, dislocation density, and the number of crystallites were found to be decreased with annealing temperature at 300 °C. However, the annealed sample was perceived to have more Zn content than S. The optical characterization reveals that the transmittance was around 76% of the as-deposited thin film and had been decreased to ~50% with the increasing of the annealing temperature. At the same time, the bandgap energy of the as-deposited film was 3.98 eV and was found to be decreased to 3.93 eV after annealing.     

Properties of Metallic and Oxide Thin Films Based on Ti and Co Prepared by Magnetron Sputtering from Sintered Targets with Different Co-Content

In this work, selected properties of metallic and oxide thin films based on titanium and cobalt were described. Thin-film coatings were prepared using the magnetron sputtering method. The deposition was carried out from sintered targets with different Co-content (2 at.%, 12 at.% and 50 at.%). The relation between the Ti–Co target composition and the Co-content in the metallic and oxide films was examined. There was 15–20% more cobalt in the films than in the target. Moreover, the deposition rate under neutral conditions (in Ar plasma) was even 10-times higher compared to oxidizing Ar:O₂ (70:30) plasma. A comprehensive analysis of the structural properties (performed with GIXRD and SEM) revealed the amorphous nature of (Ti,Co)Ox coatings, regardless of the cobalt content in the coating. The fine-grained, homogenous microstructure was observed, where cracks and voids were identified only for films with high Co-content. Optical studies have shown that these films were well transparent (60% ÷ 80%), and the amount of cobalt in the target from which they were sputtered had a significant impact on the decrease in the transparency level, the slight shift of the absorption edge position (from 279 nm to 289 nm) as well as the decrease in their optical band gap energy (from 3.13 eV to 1.71 eV). Electrical studies have shown that in (Ti,Co)Ox thin films, a unipolar memristive-like effect can be observed. The occurrence of such effects has not been reported so far in the case of TiO₂ coatings with the addition of Co.     

Structural,Electrical and Optical Properties of Pyrrolo[1,2-i][1,7] Phenanthroline-Based Organic Semiconductors

This work reports a study on structural, electrical and optical properties of some recently synthesized pyrrolo[1,2-i][1,7] phenanthrolines derivatives in thin films. The thin films were deposited onto glass substrates by spin coating technique, using chloroform as solvent. The obtained films exhibited a polycrystalline structure with an n–type semiconductor behavior after heat treatment in the temperature range 293–543 K, specific to each sample. The thermal activation energy lies between 0.68 and 0.78 eV, while the direct optical band gap values were found in the range 4.17–4.24 eV. The electrical and optical properties of the investigated organic semiconductor films were discussed in relation to microstructural properties, determined by the molecular structure. The investigated organic compounds are promising for applications in organic optoelectronics and nanoelectronics.     

Ellipsometry Study of CdSe Thin Films Deposited by PLD on ITO Coated Glass Substrates

Cadmium selenide (CdSe) thin films were deposited on indium tin oxide (ITO) coated glass substrates using pulsed laser deposition (PLD) technique under different growth temperatures. Samples were investigated for their structural, morphological, and optical properties through X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-Vis-NIR spectroscopy. AFM analysis revealed that the surface roughness of the as-grown CdSe thin films increased with the increase in deposition temperature. The optical constants and film thickness were obtained from spectroscopic ellipsometry analysis and are discussed in detail. The optical band gap of the as-grown CdSe thin films, calculated from the Tauc plot analysis, matched with the ellipsometry measurements, with a band gap of ~1.71 eV for a growth temperature range of 150 °C to 400 °C. The CdSe thin films were found to have a refractive index of ~3.0 and extinction coefficient of ~1.0, making it a suitable candidate for photovoltaics.     

Growth and Investigation of Annealing Effects on Ternary Cd1−xMgxO Nanocomposit Thin Films

Thin films of Cd_1−xMg_xO (CdMgO) (0 ≤ x ≤ 1) were investigated by depositing the films on glass substrates using the co-evaporation technique. The structural, surface morphological, optical, and electrical characteristics of these films were studied as a function of Mg content after annealing at 350 °C. The XRD analysis showed that the deposited films had an amorphous nature. The grain size of the films reduced as the Mg concentration increased, as evidenced by the surface morphology, and EDAX supported the existence of Mg content. It was observed that as the films were annealed, the transmittance of the CdMgO films saw an increase of up to 85%. The blue shift of the absorption edge was observed by the increase of Mg content, which was useful for enhancing the efficiency of solar cells. The optical band gap increased from 2.45 to 6.02 eV as the Mg content increased. With increased Mg content, the refractive index reduced from 2.49 to 1.735, and electrical resistivity increased from 535 Ω cm to 1.57 × 10⁶ Ω cm.     

Fabrication and Mechanical Properties of Cr2AlC MAX Phase Coatings on TiBw/Ti6Al4V Composite Prepared by HiPIMS

The high-power impulse magnetron sputtering (HiPIMS) technique is widely used owing to the high degree of ionization and the ability to synthesize high-quality coatings with a dense structure and smooth morphology. However, limited efforts have been made in the deposition of MAX phase coatings through HiPIMS compared with direct current magnetron sputtering (DCMS), and tailoring of the coatings’ properties by process parameters such as pulse width and frequency is lacking. In this study, the Cr₂AlC MAX phase coatings are deposited through HiPIMS on network structured TiBw/Ti6Al4V composite. A comparative study was made to investigate the effect of average power by varying frequency (1.2–1.6 kHz) and pulse width (20–60 μs) on the deposition rate, microstructure, crystal orientation, and current waveforms of Cr₂AlC MAX phase coatings. X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the deposited coatings. The influence of pulse width was more profound than the frequency in increasing the average power of HiPIMS. The XRD results showed that ex situ annealing converted amorphous Cr-Al-C coatings into polycrystalline Cr₂AlC MAX phase. It was noticed that the deposition rate, gas temperature, and roughness of Cr₂AlC coatings depend on the average power, and the deposition rate increased from 16.5 to 56.3 nm/min. Moreover, the Cr₂AlC MAX phase coatings produced by HiPIMS exhibits the improved hardness and modulus of 19.7 GPa and 286 GPa, with excellent fracture toughness and wear resistance because of dense and column-free morphology as the main characteristic.     

Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology

Non-hydrogenated amorphous-silicon films were deposited on glass substrates by Radio Frequency magnetron sputtering with the aim of being used as precursor of a low-cost absorber to replace the conventional silicon absorber in solar cells. Two Serie of samples were deposited varying the substrate temperature and the working gas pressure, ranged from 0.7 to 4.5 Pa. The first Serie was deposited at room temperature, and the second one, at 325 °C. Relatively high deposition rates above 10 Å/s were reached by varying both deposition temperature and working Argon gas pressure to ensure high manufacturing rates. After deposition, the precursor films were treated with a continuous-wave diode laser to achieve a crystallized material considered as the alternative light absorber. Firstly, the structural and optical properties of non-hydrogenated amorphous silicon precursor films were investigated by Raman spectroscopy, atomic force microscopy, X-ray diffraction, reflectance, and transmittance, respectively. Structural changes were observed in the as-deposited films at room temperature, suggesting an orderly structure within an amorphous silicon matrix; meanwhile, the films deposited at higher temperature pointed out an amorphous structure. Lastly, the effect of the precursor material’s deposition conditions, and the laser parameters used in the crystallization process on the quality and properties of the subsequent crystallized material was evaluated. The results showed a strong influence of deposition conditions used in the amorphous silicon precursor.     

Fabrication of Multiferroic Co-Substituted BiFeO3 Epitaxial Films on SrTiO3 (100) Substrates by Radio Frequency Magnetron Sputtering

The 10 at.% Co-substituted BiFeO₃ films (of thickness 50 nm) were successfully prepared by radio frequency (r.f.) magnetron sputtering on SrTiO₃ (100) substrates with epitaxial relationships of [001](001)Co-BiFeO₃//[001](001)SrTiO₃. In this study, a single phase Co-substituted BiFeO₃ epitaxial film was fabricated by r.f. magnetron sputtering. Sputtering conditions such as Ar, O₂ gas pressure, annealing temperature, annealing atmosphere, and sputtering power were systematically changed. It was observed that a low Ar gas pressure and low sputtering power is necessary to suppress the formation of the secondary phases of BiO_x. The Co-substituted BiFeO₃ films were crystalized with post-annealing at 600 °C in air. The process window for single phase films is narrower than that for pure BiFeO₃ epitaxial films. By substituting Fe with Co in BiFeO₃, the magnetization at room temperature increased to 20 emu/cm³. This result suggests that Co-substituted BiFeO₃ films can be used in spin-filter devices.     

Fabrication and Optical Characterization of VO2-Based Thin Films Deposited on Practical Float Glass by Magnetron Sputtering and Professional Annealing

In this paper, VO₂ thin films with good optical properties are fabricated on practical float glass by magnetron sputtering and a professional annealing method. The near-infrared switching efficiency (NIRSE) of the prepared film reaches 39% (@2000 nm), and its near-infrared energy modulation ability (ΔT_ir) reaches 10.9% (780–2500 nm). Further, the highest integral visible transmittance T_lum is 63%. The proposed method exhibits good reproducibility and does not cause any heat damage to the magnetron sputtering machine. The crystalline structure of the VO₂ film is characterized by X-ray diffraction (XRD). The lattice planes (011) and (−211) grow preferentially (JCPDS 65-2358), and a large number of NaV₂O₅ crystals are detected simultaneously. The microstructures are characterized by scanning electron microscopy (SEM), and a large number of long sheet crystals are identified. The phase transition temperature is significantly reduced by an appropriate W doping concentration (T_c = 29 °C), whereas excessive W doping causes distortion of the thermal hysteresis loop and a reduction in the NIRSE. Oxygen vacancies are created by low pressure annealing, due to which the phase transition temperature of VO₂ film decreases by 8 °C. The addition of an intermediate SiO₂ layer can prevent the diffusion of Na⁺ ions and affect the preparation process of the VO₂ thin film.     

High Temperature Electrical Properties of Co-Substituted La4BaCu5O13+δ Thin Films Fabricated by Sputtering Method

The high-temperature conductivity of the perovskite oxides of a La₄BaCu₅O_13+δ (LBCO) thin film prepared by RF sputtering deposition and thermal annealing has been studied. While the bulk LBCO compound was metallic, the LBCO film deposited on a Si substrate by sputtering and a post annealing process showed semiconductor-like conduction, which is considered to be due to the defects and poor grain connectivity in the LBCO film on the Si substrate. The LBCO film deposited on a SrTiO₃ substrate was of high film quality and showed metallic conduction. When the cation site Cu was substituted by Co, the electrical conductivity of the LBCO film increased further and its temperature dependence became smaller. The transport properties of LBCO films are investigated to understand its carrier generation mechanism.     

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

In this study, silicon nitride (SiN_x) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiN_x/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiN_x thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiN_x thin films were a working pressure of 800 × 10⁻³ Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH₄ = 20 sccm and NH₃ = 210 sccm, respectively. For the GZO/PI and GZO-SiN_x/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiN_x/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiN_x/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiN_x/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiN_x/PI.     

Influence of Deposition Method on the Structural and Optical Properties of Ge2Sb2Te5

Ge2Sb2Te5 (GST-225) is a chalcogenide material with applications in nonvolatile memories. However, chalcogenide material properties are dependent on the deposition technique. GST-225 thin films were prepared using three deposition methods: magnetron sputtering (MS), pulsed laser deposition (PLD) and a deposition technique that combines MS and PLD, namely MSPLD. In the MSPLD technique, the same bulk target is used for sputtering but also for PLD at the same time. The structural and optical properties of the as-deposited and annealed thin films were characterized by Rutherford backscattering spectrometry, X-ray reflectometry, X-ray diffraction, Raman spectroscopy and spectroscopic ellipsometry. MS has the advantage of easily leading to fully amorphous films and to a single crystalline phase after annealing. MS also produces the highest optical contrast between the as-deposited and annealed films. PLD leads to the best stoichiometric transfer, whereas the annealed MSPLD films have the highest mass density. All the as-deposited films obtained with the three methods have a similar optical bandgap of approximately 0.7 eV, which decreases after annealing, mostly in the case of the MS sample. This study reveals that the properties of GST-225 are significantly influenced by the deposition technique, and the proper method should be selected when targeting a specific application. In particular, for electrical and optical phase change memories, MS is the best suited deposition method.     

Optimization of the Growth Process of Double Perovskite Pr2−δNi1−xMn1+xO6−y Epitaxial Thin Films by RF Sputtering

Epitaxial thin films of Pr_2−δNi_1−xMn_1+xO_6−y (PNMO) double perovskite were grown on (001)-oriented SrTiO₃ substrates by RF magnetron sputtering. The influence of the growth parameters (oxygen pressure, substrate temperature, and annealing treatments) on the structural, magnetic and transport properties, and stoichiometry of the films was thoroughly investigated. It is found that high-quality epitaxial, insulating, and ferromagnetic PNMO thin films can only be obtained in a narrow deposition parameter window. It is shown that a careful selection of the growth conditions allows for obtaining a high degree of Ni/Mn cation ordering, which is reflected in the values of the Curie temperature, T_C, and saturation magnetization, M_S, which are very close to those of bulk material.     

Structure and Properties of Zr-Mo-Si-B-(N) Hard Coatings Obtained by d.c. Magnetron Sputtering of ZrB2-MoSi2 Target

Coatings in a Zr-Mo-Si-B-N system were deposited by the magnetron sputtering of ZrB₂-MoSi₂ targets in argon and nitrogen. The structure of the coatings was investigated using scanning electron microscopy, X-ray diffraction, energy-dispersive spectroscopy, and glow-discharge optical emission spectroscopy. Mechanical and tribological properties were measured using nanoindentation and pin-on-disc testing. Oxidation resistance and oxidation kinetics were estimated via annealing in air at 1000–1500 °C and precision weight measurements. We found that the coatings deposited in Ar demonstrate a superior combination of properties, including hardness of 36 GPa, elastic recovery of 84%, a friction coefficient of 0.6, and oxidation resistance at temperatures up to 1200 °C. High oxidation resistance is realized due to the formation of the protective (SiO₂ + ZrO₂)/SiO₂ oxide layer, which inhibits the diffusion of oxygen into the coating.     

Annealing Effect on the Structural and Optical Properties of Sputter-Grown Bismuth Titanium Oxide Thin Films

The aim of this work is to assess the evolution of the structural and optical properties of Bi_xTi_yO_z films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220–250 nm have been successfully grown. After annealing treatment at 600 °C the films show excellent transparency and full crystallization. It is shown that to achieve larger crystallite sizes, up to 17 nm, it is better to carry the annealing under dry air than under oxygen atmosphere, probably because the nucleation rate is reduced. The refractive index of the films is similar under both atmospheres and it is very high (n =2.5 at 589 nm). However it is still slightly lower than that of the single crystal value due to the polycrystalline morphology of the thin films.     

Performance of MoS2/Zr Composite Coatings at Different Deposition Temperatures

The properties of the MoS₂/Zr coatings can be significantly affected by the deposition temperature. In this study, the MoS₂/Zr composite coatings were fabricated on the cemented carbide surface, utilizing the duplex deposition technology at various deposition temperatures. The effects of deposition temperature on the mechanical and friction properties of the MoS₂/Zr coatings were systematically studied. Results exhibited that as the deposition temperature increased, the adhesion force increased first and then decreased, and the coating thickness and micro-hardness gradually increased. Dry sliding tests against a hardened steel ring showed that the tribological behaviors and wear mechanisms of the MoS₂/Zr coatings varied with deposition temperature, which were due to the changing mechanical properties of coatings caused by the temperature. The coatings deposited at a temperature of 180 °C and 200 °C possessed preferable comprehensive mechanical and tribological properties.     

Trap Exploration in Amorphous Boron-Doped ZnO Films

This paper addresses the trap exploration in amorphous boron-doped ZnO (ZnO:B) films using an asymmetric structure of metal-oxide-metal. In this work, the structure of Ni/ZnO:B/TaN is adopted and the ZnO:B film is deposited by RF magnetron sputtering. The as-deposited ZnO:B film is amorphous and becomes polycrystalline when annealing temperature is above 500 °C. According to the analysis of conduction mechanism in the as-deposited ZnO:B devices, Ohmic conduction is obtained at positive bias voltage because of the Ohmic contact at the TaN/ZnO:B interface. Meanwhile, hopping conduction is obtained at negative bias voltage due to the defective traps in ZnO:B in which the trap energy level is lower than the energy barrier at the Ni/ZnO:B interface. In the hopping conduction, the temperature dependence of I-V characteristics reveals that the higher the temperature, the lower the current. This suggests that no single-level traps, but only multiple-level traps, exist in the amorphous ZnO:B films. Accordingly, the trap energy levels (0.46–0.64 eV) and trap spacing (1.1 nm) in these multiple-level traps are extracted.