The Vital Role of La2O3 on the La2O3-CaO-B2O3-SiO2 Glass System for Shielding Some Common Gamma Ray Radioactive Sources

The role La₂O₃ on the radiation shielding properties of La₂O₃-CaO-B₂O₃-SiO₂ glass systems was investigated. The energies were selected between 0.284 and 1.275 MeV and Phy-X software was used for the calculations. BLa10 glass had the least linear attenuation coefficient (LAC) at all the tested energies, while BLa30 had the greatest, which indicated that increasing the content of La₂O₃ in the BLa-X glasses enhances the shielding performance of these glasses. The mass attenuation coefficient (MAC) of BLa15 decreases from 0.150 cm²/g to 0.054 cm²/g at energies of 0.284 MeV and 1.275 MeV, respectively, while the MAC of BLa25 decreases from 0.164 cm²/g to 0.053 cm²/g for the same energies, respectively. At all energies, the effective atomic number (Z_eff) values follow the trend BLa10 < BLa15 < BLa20 < BLa25 < BLa30. The half value thickness (HVL) of the BLa-X glass shields were also investigated. The minimum HVL values are found at 0.284 MeV. The HVL results demonstrated that BLa30 is the most space-efficient shield. The tenth value layer (TVL) results demonstrated that the glasses are more effective attenuators at lower energies, while decreasing in ability at greater energies. These mean free path results proved that increasing the density of the glasses, by increasing the amount of La₂O₃ content, lowers MFP, and increases attenuation, which means that BLa30, the glass with the greatest density, absorbs the most amount of radiation.     

Intrinsic Properties of Multi-Layer TiO2/V2O5/TiO2 Coatings Prepared via E-Beam Evaporation

Nanocomposite multi-layer TiO₂/V₂O₅/TiO₂ thin films were prepared via electron-beam evaporation using high-purity targets (TiO₂ and V₂O₅ purity > 99.9%) at substrate temperatures of 270 °C (TiO₂) and 25 °C (V₂O₅) under a partial pressure of oxygen of 2 × 10⁻⁴ mbar to maintain the stoichiometry. Rutherford backscattering spectrometry was used to confirm the layer structure and the optimal stoichiometry of the thin films, with a particle size of 20 to 40 nm. The thin films showed an optical transmittance of ~78% in the visible region and a reflectance of ~90% in the infrared. A decrease in transmittance was observed due to the greater cumulative thickness of the three layers and multiple reflections at the interface of the layers. The optical bandgap of the TiO₂ mono-layer was ~3.49 eV, whereas that of the multi-layer TiO₂/V₂O₅/TiO₂ reached ~3.51 eV. The increase in the optical bandgap was due to the inter-diffusion of the layers at an elevated substrate temperature during the deposition. The intrinsic, structural, and morphological features of the TiO₂/V₂O₅/TiO₂ thin films suggest their efficient use as a solar water heater system.     

Fabrication of Multiferroic Co-Substituted BiFeO3 Epitaxial Films on SrTiO3 (100) Substrates by Radio Frequency Magnetron Sputtering

The 10 at.% Co-substituted BiFeO₃ films (of thickness 50 nm) were successfully prepared by radio frequency (r.f.) magnetron sputtering on SrTiO₃ (100) substrates with epitaxial relationships of [001](001)Co-BiFeO₃//[001](001)SrTiO₃. In this study, a single phase Co-substituted BiFeO₃ epitaxial film was fabricated by r.f. magnetron sputtering. Sputtering conditions such as Ar, O₂ gas pressure, annealing temperature, annealing atmosphere, and sputtering power were systematically changed. It was observed that a low Ar gas pressure and low sputtering power is necessary to suppress the formation of the secondary phases of BiO_x. The Co-substituted BiFeO₃ films were crystalized with post-annealing at 600 °C in air. The process window for single phase films is narrower than that for pure BiFeO₃ epitaxial films. By substituting Fe with Co in BiFeO₃, the magnetization at room temperature increased to 20 emu/cm³. This result suggests that Co-substituted BiFeO₃ films can be used in spin-filter devices.     

Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Magnesium hydroxide (Mg(OH)₂) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO₃)₂ and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)₂ thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)₂ were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 10⁵ Ωcm. Thus, the transparent and semiconducting Mg(OH)₂ thin films were successfully prepared by DDD.     

Low Temperature Synthesis and Characterization of AlScMo3O12

Recent interest in low and negative thermal expansion materials has led to significant research on compounds that exhibit this property, much of which has targeted the A₂M₃O₁₂ family (A = trivalent cation, M = Mo, W). The expansion and phase transition behavior in this family can be tuned through the choice of the metals incorporated into the structure. An undesired phase transition to a monoclinic structure with large positive expansion can be suppressed in some solid solutions by substituting the A-site by a mixture of two cations. One such material, AlScMo₃O₁₂, was successfully synthesized using non-hydrolytic sol-gel chemistry. Depending on the reaction conditions, phase separation into Al₂Mo₃O₁₂ and Sc₂Mo₃O₁₂ or single-phase AlScMo₃O₁₂ could be obtained. Optimized conditions for the reproducible synthesis of stoichiometric, homogeneous AlScMo₃O₁₂ were established. High resolution synchrotron diffraction experiments were carried out to confirm whether samples were homogeneous and to estimate the Al:Sc ratio through Rietveld refinement and Vegard’s law. Single-phase samples were found to adopt the orthorhombic Sc₂W₃O₁₂ structure at 100 to 460 K. In contrast to all previously-reported A₂M₃O₁₂ compositions, AlScMo₃O₁₂ exhibited positive thermal expansion along all unit cell axes instead of contraction along one or two axes, with expansion coefficients (200–460 K) of α_a = 1.7 × 10⁻⁶ K⁻¹, α_b = 6.2 × 10⁻⁶ K⁻¹, α_c = 2.9 × 10⁻⁶ K⁻¹ and α_V = 10.8 × 10⁻⁶ K⁻¹, respectively.     

Uptake of Radionuclides 60Co, 137Cs,and 90Sr with α-Fe2O3 and Fe3O4 Particles from Aqueous Environment

In the paper, investigation results of the uptake efficiency of radionuclides ⁶⁰Co, ⁹⁰Sr, and ¹³⁷Cs dissolved in water onto iron oxides α-Fe₂O₃ and Fe₃O₄ are presented. It was found that sorption efficiency increased for higher pH values. Independent of the oxide nature, the uptake characteristics are the best toward ⁶⁰Co and the worst toward ¹³⁷Cs, forming the row as follows: ⁶⁰Co > ⁹⁰Sr > ¹³⁷Cs. The highest sorption ability at pH 9 was found for magnetite Fe₃O₄, which was 93%, 73%, and 26% toward ⁶⁰Co, ⁹⁰Sr, and ¹³⁷Cs, respectively, while the respective percentages for hematite α-Fe₂O₃ were 85%, 41%, and 18%. It was assumed that the main sorption mechanism was ion exchange. That may explain some decrease of the sorption efficiency in drinking water due to the interfering presence of magnesium and calcium cations. The obtained results indicated the feasibility of the tested sorbents and their merits, especially in terms of relatively high uptake coefficients, low costs, availability, and lack of toxicity.     

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

In this study, silicon nitride (SiN_x) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiN_x/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiN_x thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiN_x thin films were a working pressure of 800 × 10⁻³ Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH₄ = 20 sccm and NH₃ = 210 sccm, respectively. For the GZO/PI and GZO-SiN_x/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiN_x/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiN_x/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiN_x/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiN_x/PI.     

Green Synthesis of Hexagonal Hematite (α-Fe2O3) Flakes Using Pluronic F127-Gelatin Template for Adsorption and Photodegradation of Ibuprofen

Hematite (α-Fe₂O₃) with uniform hexagonal flake morphology has been successfully synthesized using a combination of gelatin as natural template with F127 via hydrothermal method. The resulting hematite was investigated as adsorbent and photocatalyst for removal of ibuprofen as pharmaceutical waste. Hexagonal flake-like hematite was obtained following calcination at 500 °C with the average size was measured at 1–3 µm. Increasing the calcination temperature to 700 °C transformed the uniform hexagonal structure into cubic shape morphology. Hematite also showed high thermal stability with increasing the calcination temperatures; however, the surface area was reduced from 47 m²/g to 9 m²/g. FTIR analysis further confirmed the formation Fe-O-Fe bonds, and the main constituent elements of Fe and O were observed in EDX analysis for all samples. α-Fe₂O₃ samples have an average adsorption capacity of 55–25.5 mg/g at 12–22% of removal efficiency when used as adsorbent for ibuprofen. The adsorption capacity was reduced as the calcination temperatures increased due to the reduction of available surface area of the hexagonal flakes after transforming into cubes. Photocatalytic degradation of ibuprofen using hematite flakes achieved 50% removal efficiency; meanwhile, combination of adsorption and photocatalytic degradation further removed 80% of ibuprofen in water/hexane mixtures.     

3D Porous MXene (Ti3C2Tx) Prepared by Alkaline-Induced Flocculation for Supercapacitor Electrodes

2D layered MXene (Ti₃C₂T_x) with high conductivity and pseudo-capacitance properties presents great application potential with regard to electrode materials for supercapacitors. However, the self-restacking and agglomeration phenomenon between Ti₃C₂T_x layers retards ion transfer and limits electrochemical performance improvement. In this study, a 3D porous structure of Ti₃C₂T_x was obtained by adding alkali to a Ti₃C₂T_x colloid, which was followed by flocculation. Alkaline-induced flocculation is simple and effective, can be completed within minutes, and provides 3D porous networks. As 3D porous network structures present larger surface areas and more active sites, ions transfer accelerates, which is crucial with regard to the improvement of the superior capacitance and rate performance of electrodes. The sample processed with KOH (K-a-Ti₃C₂T_x) exhibited a high capacity of approximately 300.2 F g⁻¹ at the current density of 1 A g⁻¹. The capacitance of the samples treated with NaOH and LiOH is low. In addition, annealing is essential to further improve the capacitive performance of Ti₃C₂T_x. After annealing at 400 °C for 2 h in a vacuum tube furnace, the sample treated with KOH (K-A-Ti₃C₂T_x) exhibited an excellent specific capacitance of approximately 400.7 F g⁻¹ at a current density of 1 A g⁻¹, which is considerably higher than that of pristine Ti₃C₂T_x (228.2 F g⁻¹). Furthermore, after 5000 charge–discharge cycles, the capacitance retention rate reached 89%. This result can be attributed to annealing, which can further remove unfavourable surface groups, such as –F or –Cl, and then improve conductivity capacitance and rate performance. This study can provide an effective approach to the preparation of high-performance supercapacitor electrode materials.     

Polar Order Evolutions near the Rhombohedral to Pseudocubic and Tetragonal to Pseudocubic Phase Boundaries of the BiFeO3-BaTiO3 System

Solid solutions of (1-x)BiFeO₃-xBaTiO₃ (BF-BT, 0.05 ≤ x ≤ 0.98) were prepared and characterized. It was found that the dielectric constant ε_m, remnant polarization P_r and piezoelectric coefficient d₃₃ reach their maximum values near the rhombohedral–pseudocubic phase boundary. In particular, the 0.7BF-0.3BT composition shows large polarization (P_r > 20 μC/cm²) and a temperature-stable piezoelectric property (d₃₃ > 100 pC/N when the annealing temperature is lower than ~400 °C). Near the tetragonal–pseudocubic phase boundary, ε_m and P_r decrease, and the piezoelectric property vanishes when the BF content reaches 4 mol %.     

Peculiarities of γ-Al2O3 Crystallization on the Surface of h-BN Particles

The main goal of the present work was to synthesize a composite consisting of h-BN particles coated with a γ-Al₂O₃ nanolayer. A method was proposed for applying nanocrystalline γ-Al₂O₃ to h-BN particles using a sol–gel technique, which ensures the chemical homogeneity of the composite at the nano level. It has been determined that during crystallization on the h-BN surface, the proportion of spinel in alumina decreases from 40 wt.% in pure γ-Al₂O₃ to 30 wt.% as a result of the involvement of the B³⁺ ions from the surface nitride monolayers into the transition complex. For comparison, nano-alumina was synthesized from the same sol under the same conditions as the composite. The characterization of the obtained nanostructured powders was carried out using TEM and XRD. A mechanism is proposed for the formation of a nanostructured γ-Al₂O₃@h-BN composite during the interaction of Al-containing sol and h-BN suspension in aqueous organic media. The resulting composite is a promising model of powdered raw materials for the development of fine-grained ceramic materials for a wide range of applications.     

Material Optimization Engineering toward xLiFePO4·yLi3V2(PO4)3 Composites in Application-Oriented Li-Ion Batteries

The development of LiFePO₄ (LFP) in high-power energy storage devices is hampered by its slow Li-ion diffusion kinetics. Constructing the composite electrode materials with vanadium substitution is a scientific endeavor to boost LFP’s power capacity. Herein, a series of xLiFePO₄·yLi₃V₂(PO₄)₃ (xLFP·yLVP) composites were fabricated using a simple spray-drying approach. We propose that 5LFP·LVP is the optimal choice for Li-ion battery promotion, owning to its excellent Li-ion storage capacity (material energy density of 413.6 W·h·kg⁻¹), strong machining capability (compacted density of 1.82 g·cm⁻³) and lower raw material cost consumption. Furthermore, the 5LFP·LVP||LTO Li-ion pouch cell also presents prominent energy storage capability. After 300 cycles of a constant current test at 400 mA, 75% of the initial capacity (379.1 mA·h) is achieved, with around 100% of Coulombic efficiency. A capacity retention of 60.3% is displayed for the 300th cycle when discharging at 1200 mA, with the capacity fading by 0.15% per cycle. This prototype provides a valid and scientific attempt to accelerate the development of xLFP·yLVP composites in application-oriented Li-ion batteries.     

Red Y2O3:Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applications

Y₂O_3:Eu is a promising red-emitting phosphor owing to its high luminance efficiency, chemical stability, and non-toxicity. Although Y₂O₃:Eu thin films can be prepared by various deposition methods, most of them require high processing temperatures in order to obtain a crystalline structure. In this work, we report on the fabrication of red Y₂O₃:Eu thin film phosphors and multilayer structure Y₂O₃:Eu-based electroluminescent devices by atomic layer deposition at 300 °C. The structural and optical properties of the phosphor films were investigated using X-ray diffraction and photoluminescence measurements, respectively, whereas the performance of the fabricated device was evaluated using electroluminescence measurements. X-ray diffraction measurements show a polycrystalline structure of the films whereas photoluminescence shows emission above 570 nm. Red electroluminescent devices with a luminance up to 40 cd/m² at a driving frequency of 1 kHz and an efficiency of 0.28 Lm/W were achieved.     

Effects of Annealing and Thickness of Co60Fe20Yb20 Nanofilms on Their Structure,Magnetic Properties,Electrical Efficiency,and Nanomechanical Characteristics

X-ray diffraction (XRD) analysis showed that metal oxide peaks appear at 2θ = 47.7°, 54.5°, and 56.3°, corresponding to Yb₂O₃ (440), Co₂O₃ (422), and Co₂O₃ (511). It was found that oxide formation plays an important role in magnetic, electrical, and surface energy. For magnetic and electrical measurements, the highest alternating current magnetic susceptibility (χ_ac) and the lowest resistivity (×10⁻² Ω·cm) were 0.213 and 0.42, respectively, and at 50 nm, it annealed at 300 °C due to weak oxide formation. For mechanical measurement, the highest value of hardness was 15.93 GPa at 200 °C in a 50 nm thick film. When the thickness increased from 10 to 50 nm, the hardness and Young’s modulus of the Co₆₀Fe₂₀Yb₂₀ film also showed a saturation trend. After annealing at 300 °C, Co₆₀Fe₂₀Yb₂₀ films of 40 nm thickness showed the highest surface energy. Higher surface energy indicated stronger adhesion, allowing for the formation of multilayer thin films. The optimal condition was found to be 50 nm with annealing at 300 °C due to high χ_ac, strong adhesion, high nano-mechanical properties, and low resistivity.     

Effect of Yttrium Addition on Structure and Magnetic Properties of Co60Fe20Y20 Thin Films

In this paper, a Co₆₀Fe₂₀Y₂₀ film was sputtered onto Si (100) substrates with thicknesses ranging from 10 to 50 nm under four conditions to investigate the structure, magnetic properties, and surface energy. Under four conditions, the crystal structure of the CoFeY films was found to be amorphous by an X-ray diffraction analyzer (XRD), suggesting that yttrium (Y) added into CoFe films and can be refined in grain size and insufficient annealing temperatures do not induce enough thermal driving force to support grain growth. The saturation magnetization (M_S) and low-frequency alternate-current magnetic susceptibility (χ_ac) increased with the increase of the thicknesses and annealing temperatures, indicating the thickness effect and Y can be refined grain size and improved ferromagnetic spin exchange coupling. The highest Ms and χ_ac values of the Co₆₀Fe₂₀Y₂₀ films were 883 emu/cm³ and 0.26 when the annealed temperature was 300 °C and the thickness was 50 nm. The optimal resonance frequency (f_res) was 50 Hz with the maximum χ_ac value, indicating it could be used at a low frequency range. Moreover, the surface energy increased with the increase of the thickness and annealing temperature. The maximum surface energy of the annealed 300 °C film was 30.02 mJ/mm² at 50 nm. Based on the magnetic and surface energy results, the optimal thickness was 50 nm annealed at 300 °C, which has the highest Ms, χ_ac, and a strong adhesion, which can be as a free or pinned layer that could be combined with the magnetic tunneling layer and applied in magnetic fields.     

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

In this article, we reported on a Ga₂O₃-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga₂O₃ drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied. Then nickel Schottky barrier diode and p-NiO/n-Ga₂O₃ heterojunction diode were fabricated and measured. Without any electric field management structure, the Schottky barrier diode and heterojunction diode have specific resistances of 3.0 mΩ·cm² and 6.2 mΩ·cm², breakdown voltages of 380 V and 740 V, thus yielding power figures of merit of 48 MW·cm⁻² and 88 MW·cm⁻², respectively. Besides, both devices exhibit a current on/off ratio of more than 10¹⁰. This shows the prospect of MOCVD in power device manufacture.     

Unveiling the Effect of CaF2 on the Microstructure and Transport Properties of Phosphosilicate Systems

As an effective flux, CaF₂ is beneficial in improving the fluidity of slag in the steel-making process, which is crucial for dephosphorization. To reveal the existence form and functional mechanism of CaF₂ in phosphosilicate systems, the microstructures and transport properties of CaO-SiO₂-CaF₂-P₂O₅ quaternary slag systems are investigated by molecular dynamics simulations (MD) combined with experiments. The results demonstrate that the Si-O coordination number does not vary significantly with the increasing CaF₂ content, but the P-O coordination number dramatically decreases. CaF₂ has a minor effect on the single [SiO₄] but makes the structure of the silicate system simple. On the contrary, F⁻ ions could reduce the stability of P-O bonds and promoted the transformation of [PO₄] to [PO₃F], which is beneficial for making the P element-enriched phosphate network structure more aggregated. However, the introduction of CaF₂ does not alter the tetrahedral character of the original fundamental structural unit. In addition, the results of the investigation of the transport properties show that the self-diffusion coefficients of each ion are positively correlated with CaF₂ content and arranged in the order of F⁻ > Ca²⁺ > O²⁻ ≈ P⁵⁺ > Si⁴⁺. Due to CaF₂ reducing the degree of polymerization of the whole melts, the viscosity decreases from 0.39 to 0.13 Pa·s as the CaF₂ content increases from 0% to 20%. Moreover, the viscosity of the melt shows an excellent linear dependence on the structural parameters.     

Characterizing the Chemical Structure of Ti3C2Tx MXene by Angle-Resolved XPS Combined with Argon Ion Etching

Angle-resolved XPS combined with argon ion etching was used to characterize the surface functional groups and the chemical structure of Ti₃C₂T_x MXene. Survey scanning obtained on the sample surface showed that the sample mainly contains C, O, Ti and F elements, and a little Al element. Analyzing the angle-resolved narrow scanning of these elements indicated that a layer of C and O atoms was adsorbed on the top surface of the sample, and there were many O or F related Ti bonds except Ti–C bond. XPS results obtained after argon ion etching indicated staggered distribution between C–Ti–C bond and O–Ti–C, F–Ti bond. It is confirmed that Ti atoms and C atoms were at the center layer of Ti₃C₂T_x MXene, while O atoms and F atoms were located at both the upper and lower surface of Ti₃C₂ layer acting as surface functional groups. The surface functional groups on the Ti₃C₂ layer were determined to include O²⁻, OH⁻, F⁻ and O⁻–F⁻, among which F atoms could also desorb from Ti₃C₂T_x MXene easily. The schematic atomic structure of Ti₃C₂T_x MXene was derived from the analysis of XPS results, being consistent with theoretical chemical structure and other experimental reports. The results showed that angle-resolved XPS combing with argon ion etching is a good way to analysis 2D thin layer materials.     

Role of Density and Grain Size on the Electrocaloric Effect in Ba0.90Ca0.10TiO3 Ceramics

Pure perovskite Ba_0.90Ca_0.10TiO₃ ceramics, with a relative density of between 79 and 98% and grain sizes larger than 1 µm, were prepared by solid-state reaction. The dielectric and electrocaloric properties were investigated and discussed considering the density and grain size of the samples. Room temperature impedance measurements show good dielectric properties for all ceramics with relative permittivity between 800 and 1100 and losses of <5%. Polarization vs. E loops indicates regular variation with increasing sintering temperature (grain size and density), an increase in loop area, and remanent and saturation polarization (from P_sat = 7.2 µC/cm² to P_sat = 16 µC/cm²). The largest electrocaloric effect was 1.67 K for ceramic with GS = 3 µm at 363 K and electrocaloric responsivity (ζ) was 0.56 K mm/kV. These values are larger than in the case of other similar materials; thus, Ba_0.90Ca_0.10TiO₃ ceramics with a density larger than 90% and grain sizes of a few µms are suitable materials for electrocaloric devices.     

Investigation of Cation Exchange Behaviors of FAxMA1−xPbI3 Films Using Dynamic Spin-Coating

In this study, we fabricated and characterized uniform multi-cation perovskite FA_xMA_1−xPbI₃ films. We used the dynamic spin-coating method to control the cation ratio of the film by gradually increasing the FA+, which replaced the MA+ in the films. When the FA+ concentration was lower than xFA ~0.415 in the films, the stability of the multi-cation perovskite improved. Above this concentration, the film exhibited δ-phase FAPbI₃ in the FA_xMA_1−xPbI₃ films. The formation of δ-phase FAPbI₃ disturbed the homogeneity of the photoluminescence spatial distribution and suppressed the absorption spectral bandwidth with the increasing bandgap. The precise control of the cation ratio of multi-cation perovskite films is necessary to optimize the energy-harvesting performance.