Tumor imaging via indium 111-labeled DTPA-adenosylcobalamin.

Vitamin B12 is essential for life. Lack of it results in pernicious anemia and death. Conversely, the demand for vitamin B12 increases in rapidly dividing tumors. This is secondary to the direct involvement of vitamin B12 in mitochondrial metabolism as well as its indirect role in the production of thymidylate and S-adenosylmethionine. The latter 2 substances are needed for DNA synthesis and cellular methylation reactions, respectively. Novel radiolabeling of adenosylcobalamin has proven to be useful in the imaging of transplanted and spontaneous tumors in animals. Herein, we describe what we believe to be the first human to have imaging with conventional gamma cameras of vitamin B12 metabolism in a breast tumor.     

Enhancing oxygen and hydrogen evolution activities of perovskite oxide LaCoO3via effective doping of platinum

In this study, a series of perovskite oxides LaCo_1−xPt_xO_3−δ (x = 0, 0.02, 0.04, 0.06, and 0.08) were prepared by the citric acid–ethylenediaminetetraacetic acid (CA–EDTA) complexing sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Then, the samples were investigated as OER and HER bifunctional electrocatalysts in alkaline media. Compared with other catalysts, LaCo_0.94Pt_0.06O_3−δ had good stability and presented more activity at a lower overpotential of 454 mV (at 10 mA cm⁻²), a lower Tafel slope value of 86 mV dec⁻¹ and a higher mass activity of 44.4 A g⁻¹ for OER; it displayed a lower overpotential of 294 mV (at −10 mA cm⁻²), a lower Tafel slope value of 148 mV dec⁻¹ and a higher mass activity of −34.5 A g⁻¹ for HER. The improved performance might depend on a larger ECSA, faster charge transfer rate and higher ratio of the highly oxidative oxygen species (O₂²⁻/O⁻). Furthermore, the e_g orbital filling of Co approaching 1.2 in the B site might play a leading role.

Among the perovskite LaCo_1−xPt_xO_3−δ catalysts, LaCo_0.94Pt_0.06O_3−δ proved best for catalyzing OER/HER, with η = 454/294 mV, which might be attributed to LCP6 having the e_g orbital filling of Co closest to 1.2.     

Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on–off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10⁴, with a photoresponsivity of 1.9 × 10⁻² A W⁻¹, as well as a rejection ratio of 2.68 × 10⁴ at a voltage bias of 10 V.

An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering.     

Synthesis of indium oxide microparticles using aerosol assisted chemical vapour deposition

Microparticles of indium oxide (In₂O₃) are deposited on glass substrates at 500 °C using aerosol assisted chemical vapour deposition (AACVD). The structural, morphological and optical properties of the as-deposited particles are reported.

Microparticles of indium oxide (In₂O₃) are deposited on glass substrates at 500 °C using aerosol assisted chemical vapour deposition (AACVD).

Indium oxide (In₂O₃) is a promising wide bandgap n-type semiconductor with good optical transparency in the visible region and has drawn significant interest in the field of photovoltaics,^1,2 thin film transistors,³ photodetectors⁴ and gas sensors.⁵ Doping with other metals (such as Sn, Mo, Zr, Ga, Ti and Ta) is possible in order to modify the properties of In₂O₃, whilst retaining optical transparency in the visible region of the electromagnetic spectrum. Examples of these widely used doped materials include (i) tin-doped indium oxide (ITO), which is a well known transparent conducting oxide (TCO) has an optical bandgap of 3.4 eV, good chemical stability and excellent adhesion to the substrate, widely used in optoelectronic devices such as light emitting diodes⁶ and solar cells;⁷ (ii) recently, molybdenum-doped In₂O₃ (IMO) has been reported as an durable alternative to the commercially dominant ITO.⁸ IMO has shown higher conductivity and increased infrared transparency than ITO with the same carrier density. This makes IMO a more suitable and low cost alternative material for device applications as much thinner films of IMO can produced with properties equal to or better than ITO of the same carrier concentration; (iii) Zr-doped indium oxide, which has been used as a transparent electrode in perovskite/silicon tandem devices, which results in the improvement of the power conversion efficiency from 23.3% to 26.2%;¹ and (iv) Ga-doped indium oxide which has been used in phase change memory devices.⁹Several deposition techniques have been used to produce In₂O₃ thin films such as atomic layer deposition,¹⁰ molecular beam epitaxy,¹¹ pulsed laser deposition,¹² spin coating,² metal organic chemical vapour deposition¹³ and aerosol assisted chemical vapour deposition.^14,15 The latter technique is useful as it is simple, low cost, single step and used in the industry for assembly line glass coating. Maeng et al. reported In₂O₃ films using Et₂InN(TMS)₂ as a liquid precursor and H₂O in the temperature range of 225–250 °C.¹⁰ Kim et al. has used spin coating to deposit In₂O₃ using indium chloride as precursor and annealed at 400 °C.³ In both the cases a poorly crystalline XRD pattern is reported. Basharat et al. has reported the deposition of In₂O₃ film at 550 °C on glass substrate from the dual-source AACVD reaction of Me₃In and ROH (R = CH₂CH₂NMe₂, CH(CH₃)CH₂NMe₂, C(CH₃)₂CH₂OMe, CH₂CH₂OMe) in toluene.¹⁴ The chosen ligands are less air/moisture sensitive and have increased solubility, but the preparation of precursor ligands are time consuming (24 h reaction), multi-stepped and require low temperatures (−78 °C). Yang et al. reported a one-step aqueous solvothermal method for the synthesis of highly crystalline and nearly monodisperse In₂O₃ nanocrystals.¹⁶ Seo et al. reported the preparation of colloidal, highly crystalline and size controlled In₂O₃ nanoparticles from thermal decomposition of the In(acac)₃ precursor in oleylamine.¹⁷ These latter methods yield highly crystalline and monodisperse nanoparticles, but are quite time consuming and not suitable for mass production of In₂O₃. A comparison table of AACVD and other reported methods for producing indium oxide has been incorporated into the ESI.^† The structural phase stability, optical properties, electronic structure and high pressure behaviour of In₂O₃ has been studied by Karazhanov et al. using first-principles density functional theory (DFT) calculations in three different space group symmetries I2₁3, Ia$\bar{3}$ and R$\bar{3}$. It is found that In₂O₃ with space group Ia$\bar{3}$ undergoes a pressure-induced phase transition to the R3 phase at ca. 3.8 GPa. For In₂O₃ the magnitudes of the absorption and reflection coefficients with these space group symmetries are small and in the energy range of 0–5 eV, indicating that these phases are transparent.¹⁸In this paper we report the deposition of transparent indium oxide microparticles on glass substrates using aerosol assisted chemical vapour deposition (AACVD) from a single precursor solution. AACVD is an ambient pressure CVD technique which is simple, cost-effective, proceeds in a single step and is suitable for the production of large area thin films on a range of substrates, and has been used for the deposition of wide range of semiconducting materials such as MAPBr,¹⁹ Cs₂SnI₆,²⁰ MoS₂,²¹ Cr-doped MoS₂,²² SnS²³ and copper zinc tin sulfide (CZTS).²⁴ Solubility of the precursor molecules in a solvent is required in order to obtain high quality thin films. A number of indium precursors have been used to deposit high quality In₂O₃ thin films and whilst current precursor design is functional, none of them are entirely satisfactory and have certain disadvantages,¹⁴ for example, [In-(OCMe(CF₃)₂)₃(H₂N^tBu)] and [Me₂In(OC(CF₃)₂CH₂-NHMe)] contain fluorine, which results in fluorine contamination in In₂O₃ films.^25,26 [In(thd)₃] (thd = 2,2,6,6-tetramethylheptane-3,5-dionate) was synthesised and added to dichloromethane (CH₂Cl₂), toluene and tetrahydrofuran (THF) separately, but in all cases a fine suspension is formed which, upon standing for 1 h, is sedimented.¹⁵ Indium halides are known for their poor solubility in non-coordinating organic solvents and often rapidly disproportionate to In^II or In^III halide complexes with treatment of coordinating solvents.²⁷ Keeping the solubility of precursor in mind, we have used for the first time a mixture of polar aprotic solvents to completely dissolve InI to obtain a clear transparent precursor solution for the deposition of In₂O₃ on glass substrates using AACVD.The precursor solution was obtained by dissolving indium iodide (InI) powder in a mixture of anhydrous N,N-dimethylformamide (DMF) and acetonitrile (1 : 1, v/v) with stirring for 1 h at 70 °C. Aerosols were generated from this solution using an ultrasonic humidifier, which were then transported using a stream of argon gas (250 sccm) into a hot wall reactor containing cleaned glass substrates at a temperature of 500 °C. After decomposition of the precursor a transparent film comprised of In₂O₃ microparticles is obtained. The as-deposited materials were characterised using powder X-ray diffraction (p-XRD) in the range of 10° < 2θ < 70° (Fig. 1). Reflections from the (211), (222), (400), (411), (431), (440), (611) and (622) Bragg planes of cubic In₂O₃ were observed at 2θ = 21.49°, 30.58°, 35.46°, 37.68°, 45.69°, 51.03°, 55.99° and 60.67° respectively (ICCD no. 00-006-0416, space group Ia$\bar{3}$ with a = 10.11 Å). The reflection indexed to the (400) plane is dominant, which indicates a preferred orientation of growth along this direction under these conditions.⁸Open in a separate windowFig. 1PXRD pattern of In₂O₃ microparticles deposited by AACVD on glass substrates at 500 °C. The black sticks represent the theoretical powder diffraction pattern of cubic In₂O₃ (ICCD file no. 00-006-0416).The Raman spectrum of the In₂O₃ microparticle film was collected using 514 nm laser excitation. Scattering peaks at 130, 551 and 1371 cm⁻¹ were observed (Fig. 2). The peak around 130 cm⁻¹ is assigned to the A⁽¹⁾_g vibrational mode and peak at 551 and 1371 cm⁻¹ are ascribed to the phonon vibrational modes of cubic In₂O₃. These values are consistent with those reported in literature.^28–30 The remaining peaks around 1100 and 1600 cm⁻¹ are assigned to carbon which may arise from decomposition of solvent.³¹Open in a separate windowFig. 2Raman spectrum of In₂O₃ microparticles deposited by AACVD on a glass substrate at 500 °C.The surface morphology of the as-deposited material was investigated using scanning electron microscopy (SEM) in secondary electron mode. Spherical microparticles are uniformly and randomly distributed over the substrate (Fig. 3(a)). Fig. 3(b) shows the distribution of indium (In) over an interrogated area of ca. 15 × 11 μm confirmed by energy dispersive X-ray (EDX) mapping at an acceleration voltage of 10 kV. Fig. 3(c) shows a histogram which summarises the size distribution of In₂O₃ (N = 65). The average diameter of an In₂O₃ particle is 368 ± 120 nm. The mechanisms of indium oxide particle growth and resulting particle sizes have been discussed in literature. Maensiri et al. reported that the average particle size of In₂O₃ increases with increasing the calcination temperature.³² Ayeshamariam et al. reported that crystallite sizes derived from XRD increases with increasing annealing temperature and that the band gap energy of these particles also scales linearly as a function of annealing temperature. It was not expected to be a quantum confinement effect as the particle sizes studied (ca. 30 nm) were all an order of magnitude greater than the exciton Bohr radius of In₂O₃ (ca. 3 nm).³³ Elemental composition of our In₂O₃ microparticle film was performed using EDX. The EDX spectrum and atomic percent of the elements present in In₂O₃ film are shown in Fig. S1 and S2,^† giving a clear indication of the presence of In in the film.Open in a separate windowFig. 3Characterisation at the microscale using electron microscopy. (a) Secondary electron (SE) SEM image, (b) spatially resolved EDX spectrum mapping of In emission over the same area and (c) histogram of In₂O₃ microparticles deposited by AACVD on a glass substrate at 500 °C (N = 65). The scale bar in (a) and (b) corresponds to 7 μm in each case.The optical properties of as-deposited thin film of In₂O₃ microparticle was investigated by UV-Vis-NIR transmittance in the wavelength range 300–900 nm. The as-deposited In₂O₃ shows over 80% transmittance in the wavelength range of 400–900 nm (Fig. 4), which is comparable to previous reports.¹⁰ The inset of Fig. 4 shows an absorbance spectrum of In₂O₃ microparticles revealing strong optical absorbance in the ultraviolet region of the spectrum. Estimation of optical bandgap of In₂O₃ microparticle thin film from Tauc plot (described in full in the ESI Section S5^†) gives a direct band gap value of 3.53 eV (Fig. S3^†). Given the band gap value of 3.53 eV, the In₂O₃ produced by this method and under these conditions is thus a wide band gap semiconductor. By visual inspection it is observed that the In₂O₃ film deposited on glass substrate is colourless and transparent to visible light.^3,34Open in a separate windowFig. 4Optical transmittance spectrum of In₂O₃ microparticles deposited by AACVD technique on a glass substrate at 500 °C. Inset: absorbance spectrum of as-deposited In₂O₃ microparticles.In summary, a simple, cost-effective, and single step aerosol assisted chemical vapour deposition (AACVD) technique has been used for the synthesis of optically transparent spherical In₂O₃ microparticles on glass substrates. Powder XRD patterns and Raman scattering confirm the crystallinity of as-deposited In₂O₃ microparticles with a preferred orientation along the (400) plane. Inspection of surface morphology by secondary electron SEM shows that the as-deposited In₂O₃ microparticles are spherical with an average diameter of 368 ± 120 nm (N = 65) and are uniformly and randomly distributed over the substrate. EDX spectroscopy gives a clear indication of the presence of In on the substrate. The UV-Vis-NIR spectroscopy of as-deposited In₂O₃ microparticle film show over 80% transmittance in the wavelength range of 400–900 nm and strong optical absorbance in the ultraviolet region of the spectrum with an estimated direct bandgap value of 3.53 eV from a Tauc plot. Optical data thus suggest that bandgap value of 3.53 eV does not fall in the band gap range for semiconductors, and hence materials produced by this method are wide band gap semiconductors. Thus the AACVD method we report produces indium oxide from a soluble carbon-free precursor with potential for scale-up.     

High-performance soy protein-based films from cellulose nanofibers and graphene oxide constructed synergistically via hydrogen and chemical bonding

Soybean protein isolate (SPI) shows a broad application prospect in the food and packaging industry. However, its inferior mechanical properties and water resistance limit its application. In this work, a series of SPI-based composite films were prepared by combining with cellulose nanofiber (CNF), graphene oxide (GO), GO/CNF, ethylene glycol diglycidyl ether (EDGE) or GO/CNF/EGDE. The results show that by adding a small amount of reinforced materials (3%), the water resistance, hydrophilicity, mechanical properties and thermal stability of composite films were improved. The filling effect and hydrogen bonding of the reinforcing materials contribute to the formation of film structure. EGDE cross-link SPI with CNF and GO build a chemical network to improve the properties of the film. In addition, they could make a synergistic effect to better enhance the performance of a protein film. Therefore, the tensile strength and elastic modulus of the SGCE film reached 469.21% and 367.58%, respectively.

Soybean protein isolate (SPI) shows a broad application prospect in the food and packaging industry.     

A novel quartz-crystal microbalance humidity sensor based on solution-processible indium oxide quantum dots

Having a large surface area, like the quantum confinement effect also caused by the nano-level size of quantum dots (QDs), creates fantastic potential for humidity sensing. A high concentration of surface adsorption sites initiates an increased response. Porosity between QDs allows fast water vapor penetration and outflow. Here, a quartz-crystal microbalance (QCM) humidity sensor was prepared using indium oxide (In₂O₃) QDs, synthesized via a solvothermal method. After the In₂O₃ QDs were directly spin-coated onto the QCM, an annealing process removed organic long chains and exposed more moisture adsorption sites on the surfaces of the QDs. The annealed QCM humidity sensor exhibited high sensitivity (56.3 Hz per %RH at 86.3% RH), with a fast response/recovery time (14 s/16 s). Long carbon chains were broken down, and hydrogen-bonded hydroxyl groups were chemisorbed to the QDs. The chemical reaction was reduced by these chemisorbed hydrogen-bonded hydroxyl groups. Mass change was mostly caused by fast multilayer physisorption. Thus, the transducer can effectively and precisely monitor the moisture from a person''s breath. In₂O₃ QD-modified QCM sensors demonstrate promising humidity-sensing applications in daily life.

A high-performance QCM humidity sensor was prepared based on In₂O₃ QDs with a high specific surface area.     

Nitric oxide potentiates hydrogen peroxide-induced killing of Escherichia coli

Previously, we reported that nitric oxide (NO) provides significant protection to mammalian cells from the cytotoxic effects of hydrogen peroxide (H2O2). Murine neutrophils and activated macrophages, however, produce NO, H2O2, and other reactive oxygen species to kill microorganisms, which suggests a paradox. In this study, we treated bacteria (Escherichia coli) with NO and H2O2 for 30 min and found that exposure to NO resulted in minimal toxicity, but greatly potentiated (up to 1,000-fold) H2O2-mediated killing, as evaluated by a clonogenic assay. The combination of NO/H2O2 induced DNA double strand breaks in the bacterial genome, as shown by field-inverted gel electrophoresis, and this increased DNA damage may correlate with cell killing. NO was also shown to alter cellular respiration and decrease the concentration of the antioxidant glutathione to a residual level of 15-20% in bacterial cells. The iron chelator desferrioxamine did not stop the action of NO on respiration and glutathione decrease, yet it prevented the NO/H2O2 synergistic cytotoxicity, implicating metal ions as critical participants in the NO/H2O2 cytocidal mechanism. Our results suggest a possible mechanism of modulation of H2O2-mediated toxicity, and we propose a new key role in the antimicrobial macrophagic response for NO.     

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of In₂O₃ thin films and ZrO_x gate dielectrics, as well as the fabrication of In₂O₃-based TFTs. To verify the possible applications of ZrO_x thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, fully solution-induced In₂O₃ TFTs based on ZrO₂ dielectrics have been integrated and investigated. The devices, with an optimized annealing temperature of 300 °C, have demonstrated high electrical performance and operational stability at a low voltage of 2 V, including a high μ_sat of 4.42 cm² V⁻¹ s⁻¹, low threshold voltage of 0.31 V, threshold voltage shift of 0.15 V under positive bias stress for 7200 s, and large I_on/I_off of 7.5 × 10⁷, respectively. The as-fabricated In₂O₃/ZrO_x TFTs enable fully solution-derived oxide TFTs for potential application in portable and low-power consumption electronics.

Solution based deposition has been recently considered as a viable option for low-cost flexible electronics.     

Facile stabilization of a cyclodextrin metal–organic framework under humid environment via hydrogen sulfide treatment

Increasing resistance to humid environments is a major challenge for the application of γ-CD-K-MOF (a green MOF) in real-world utilisation. γ-CD-K-MOF–H₂S with enhanced moisture tolerance was obtained by simply treating MOF with H₂S gas. XPS, Raman and TGA characterizations indicated that the H₂S molecules coordinated with the metal centers in the framework. H₂S acting as a newly available water adsorption potential well near the potassium centers protects the metal–ligand coordination bond from attack by water molecules and thus improves the moisture stability of MOF. After 7 days exposure in 60% relative humidity, γ-CD-K-MOF–H₂S retained its crystal structure and morphology, while γ-CD-K-MOF had nearly collapsed. In addition, the formaldehyde uptake tests indicated that γ-CD-K-MOF retain their permanent porosity after interaction with H₂S. This simple and facile one-step strategy would open a new avenue for preparation of moisture stable MOFs for practical applications.

The moisture stable γ-CD-K-MOF was obtained by simply treating MOF with H₂S gas. H₂S acting as new water adsorption sites protected the metal–ligand bonds from water attack and thus enhanced the moisture resistance of γ-CD-K-MOF.     

Hierarchical Ag nanostructures on Sn-doped indium oxide nano-branches: super-hydrophobic surface for surface-enhanced Raman scattering

Herein, we fabricated a super-hydrophobic SERS substrate using Sn-doped indium oxide (Indium-tin-oxide: ITO) nano-branches as a template. ITO nano-branches with tens of nanometer diameter are first fabricated through the vapor–liquid–solid (VLS) growth to provide roughness of the substrate. 10 nm thickness of Ag thin film was deposited and then treated with the post-annealing process to create numerous air-pockets in the Ag film, forming a hierarchical Ag nanostructures. The resulting substrate obtained Cassie''s wetting property with a water contact angle of 151°. Compared to the normal hydrophobic Ag nanoparticle substrate, increase of about 4.25-fold higher SERS signal was obtained for 7 μL of rhodamine 6G aqueous solutions.

Herein, we fabricated a super-hydrophobic SERS substrate using Sn-doped indium oxide (Indium-tin-oxide: ITO) nano-branches as a template.     

Performance enhancement of single layer organic light-emitting diodes using chlorinated indium tin oxide as the anode

Effective green single-layer organic light-emitting diodes (OLEDs) are reported with fac-tris(2-phenylpyridine)iridium [Ir(ppy)₃] as a dopant and chlorinated indium tin oxide (Cl–ITO) as a transparent anode. The work function of the chlorinated ITO is manipulated to be ∼5.3 eV from ∼4.7 eV for bared ITO. The improvement in anode workfunction allows the direct hole injection into the HOMO of the phosphorescent dopant. As a result, the green phosphorescent OLEDs with simple single layers can deliver a current efficiency (CE) and external quantum efficiency (EQE) as high as 33.48 cd A⁻¹ and 10.1%, respectively.

Effective green single-layer organic light-emitting diodes (OLEDs) are reported with fac-tris(2-phenylpyridine)iridium [Ir(ppy)₃] as a dopant and chlorinated indium tin oxide (Cl–ITO) as a transparent anode.     

铟锡氧化物薄膜载体材料在不同介质溶液中的电学稳定性

背景:在电化学基因芯片中,对载体材料铟锡氧化物薄膜的化学修饰、DNA杂交反应等需要在不同的介质溶液中进行,而各种介质溶液腐蚀会对其性能产生较大的影响,甚至出现性能劣化或失效现象。目的:观察铟锡氧化物薄膜载体材料在NaOH、NaCl、Na2SO4、H2SO4介质溶液中的电学稳定性。方法:针对用于电化学基因芯片载体材料的铟锡氧化物薄膜,利用相对电阻变化(ΔR/R)方法观察了铟锡氧化物薄膜在温度分别为25℃和50℃、浓度为1mol/L的NaOH、NaCl、Na2SO4、H2SO4介质溶液中的电学稳定性。结果与结论:在4种介质溶液中,铟锡氧化物薄膜ΔR/R值显示出了相同的变化规律。随着浸泡时间的延长,薄膜的ΔR/R值持续增大,导电性能下降;而随着介质溶液温度的升高,薄膜电学稳定性显著下降,出现了薄膜电学性能失效现象;在4种介质溶液中,铟锡氧化物薄膜电学稳定性从好到差依次为:NaOH>Na2SO4>NaCl>H2SO4,出现上述现象的主要原因是薄膜在4种介质溶液中的腐蚀机制不同。     

铟锡氧化物薄膜载体材料在不同介质溶液中的电学稳定性

背景：在电化学基因芯片中,对载体材料铟锡氧化物薄膜的化学修饰、DNA杂交反应等需要在不同的介质溶液中进行,而各种介质溶液腐蚀会对其性能产生较大的影响,甚至出现性能劣化或失效现象。目的：观察铟锡氧化物薄膜载体材料在NaOH、NaCl、Na2SO4、H2SO4介质溶液中的电学稳定性。方法：针对用于电化学基因芯片载体材料的铟锡氧化物薄膜,利用相对电阻变化（ΔR/R）方法观察了铟锡氧化物薄膜在温度分别为25℃和50℃、浓度为1mol/L的NaOH、NaCl、Na2SO4、H2SO4介质溶液中的电学稳定性。结果与结论：在4种介质溶液中,铟锡氧化物薄膜ΔR/R值显示出了相同的变化规律。随着浸泡时间的延长,薄膜的ΔR/R值持续增大,导电性能下降;而随着介质溶液温度的升高,薄膜电学稳定性显著下降,出现了薄膜电学性能失效现象;在4种介质溶液中,铟锡氧化物薄膜电学稳定性从好到差依次为：NaOH〉Na2SO4〉NaCl〉H2SO4,出现上述现象的主要原因是薄膜在4种介质溶液中的腐蚀机制不同。     

Nitric oxide reduces hydrogen peroxide production from human polymorphonuclear neutrophils

Abstract. Nitric oxide has been reported to affect both adhesion and respiratory burst of neutrophils. This indicates a possible role of nitric oxide in regulation of acute inflammatory responses. Release of oxygen metabolites from neutrophils can be measured using luminol-enhanced chemiluminescence and this method can detect both extracellularly and intracellu-larly released oxygen metabolites. Neutrophils treated with nitroprusside and activated with FMLP, type I collagen or PMA decreased their extracellular release of oxygen metabolites, while their intracellular release was almost unaffected. The effect of nitroprusside was mediated by nitric oxide since treatment with cyanide had the opposite effect. N-ethylmaleimide treatment decreased both extra- and intracellular release of oxygen metabolites. This indicates that nitric oxide affects membrane-bound NADPH-oxidase either indirectly or directly, and not a cytosol factor of the oxidase as earlier shown for N-ethylmaleimide. In conclusion, extracellular nitric oxide attenuates extracellularly released oxygen metabolites from activated neutrophils in an inflammatory response.     

Biomolecule-to-fluorescent-color encoder: modulation of fluorescence emission via DNA structural changes

A biomolecule-to-fluorescent-color (B/F) encoder for optical readout of biomolecular information is proposed. In the B/F encoder, a set of fluorescence wavelengths and their intensity levels are used for coding of a biomolecular signal. A hybridization chain reaction of hairpin DNAs labeled with fluorescent reporters was performed to generate the fluorescence color codes. The fluorescence is modulated via fluorescence resonance energy transfer, which is controlled by DNA structural changes. The results demonstrate that fluorescent color codes can be configured based on two wavelengths and five intensities using the B/F encoder, and the assigned codes can be retrieved via fluorescence measurements.OCIS codes: (170.0170) Medical optics and biotechnology, (280.1415) Biological sensing and sensors     

Nano-imprinting of refractive-index-matched indium tin oxide sol–gel in light-emitting diodes for eliminating total internal reflection

Refractive-index (RI)-matched nanostructures are implemented in GaN-based light-emitting diodes (LEDs) for enhancing light output efficiency. The RI-matched indium tin oxide (ITO) nanostructures are successfully implemented in GaN-based lateral LEDs by using ITO sol–gel and nanoimprint lithography. The ITO sol–gel nanostructures annealed at 300 °C have RI of 1.95, showing high transparency of 90% and high diffused transmittance of 34%. Consequently, the light output power in LEDs with the RI-matched nanostructures increases by 8% in comparison with that in LEDs containing flat ITO. Ray tracing and finite-difference time-domain (FDTD) simulations show that the RI-matched nanostructures on the transparent current spreading layer dramatically reduce Fresnel reflection loss at the interface of the current spreading layer with the nanostructure and extract confined waveguide lights in LEDs.

Refractive-index (RI)-matched nanostructures are implemented in GaN-based light-emitting diodes (LEDs) for enhancing light output efficiency.     

吸入一氧化氮并环甲膜穿刺气管内注液治疗重症哮喘

目的：探讨在双相气道正压（ＢｉＰＡＰ）呼吸机通气下治疗吸入外源性一氧化氮（ＮＯ）并用环甲膜穿刺间断气管内液体注入抢救重症哮喘的治疗作用。方法：２２例患者随机分成２组，ＢｉＰＡＰ呼吸机治疗合并吸入外源性ＮＯ和环甲膜穿刺间断气管内液体注入为治疗组（１２例）；单用ＢｉＰＡＰ呼吸机治疗为对照组（１０例）。２组病例均大量快速输液纠正脱水和加用激素（地塞米松）治疗，并记录治疗后临床症状及体征改善所需时间和治疗前及治疗后１２小时血气变化。结果：治疗组与对照组比较，临床症状改善（开始安静，出汗减少，能平卧，呼吸变深变慢）所需时间明显缩短（Ｐ均＜０．０５）；体征改善（哮鸣音减少，哮鸣音消失，心率下降，心率平稳）所需时间明显缩短（Ｐ均＜０．０５）；治疗后１２小时动脉氧分压（ＰａＯ２）明显升高（Ｐ＜０．０５），动脉二氧化碳分压（ＰａＣＯ２）明显下降（Ｐ＜０．０５）。结论：重症哮喘患者吸入ＮＯ并用ＢｉＰＡＰ呼吸机和环甲膜穿刺间断气管内注入液体可以扩张支气管，稀释痰液，通畅呼吸道；此方法是抢救重症哮喘的一个有效方法。     

Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO2 treated by H3PO4

Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO₂ immersed in 5% H₃PO₄ for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature. The huge EDL specific capacitance is 8.2 μF cm⁻² at 20 Hz, and about 0.7 μF cm⁻² even at 1 MHz. Both enhancement mode (V_th = 0.15 V) and depletion mode (V_th = −0.26 V) operation are realized by controlling the thickness of the self-assembled ITO semiconducting layer. Electrical characteristics with the equivalent field-effect mobility of 65.4 cm² V⁻¹ s⁻¹, current on/off ratio of 2 × 10⁶, and subthreshold swing of 80 mV per decade are demonstrated, which are promising for fast-switching and low-power electronics on temperature-sensitive substrates.

Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO₂ immersed in 5% H₃PO₄ for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature.     

Reduction of formaldehyde emission from urea-formaldehyde resin with a small quantity of graphene oxide

Graphene oxide (GO) has theoretically been identified as a candidate for adsorbing formaldehyde molecules. However, whether GO can actually serve as a scavenger for formaldehyde resin adhesives must be experimentally verified due to the complex interaction between GO and formaldehyde molecules in the presence of resin, the competition between the formaldehyde emission rate and its adsorption rate on the scavenger, and other complications. From the results from this study we experimentally demonstrate that GO synthesised by the improved Hummers'' method is a powerful scavenger for a urea–formaldehyde (UF) resin. We investigate the effect of the added amount of GO on the formaldehyde emission from UF resin. The emission from the UF/GO composite resin is 0.22 ± 0.03 mg L⁻¹, which is an 81.5% reduction compared to that of the control UF resin when adding 0.20 wt% GO into the UF resin. However, adding higher amounts of GO (more than 0.20 wt%) increases the formaldehyde emission and the emission approaches that of pure UF resin (1.19 ± 0.36 mg L⁻¹). This is likely due to the more acidic pH of the composite, which may lead to a faster curing reaction of the UF resin and acceleration of the emission.

This is the first experiment to demonstrate that GO effectively prevents formaldehyde emission from UF resin.     

Green synthesis of zinc oxide nanostructures and investigation of their photocatalytic and bactericidal applications

We report a facile one-pot green synthesis of zinc oxide (ZnO) nanostructures using aqueous leaf extract of Dolichos Lablab L. as the reducing and capping agent. The optical properties, structure and morphology of the as-synthesized ZnO nanostructures have been characterized by UV-Visible spectroscopy (UV-Vis), Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) supported with energy dispersive X-ray spectroscopy (EDX), and transmission electron microscopy (TEM). TEM analysis revealed that the as-synthesized ZnO nanostructures have an average particle diameter of 29 nm. XRD patterns confirmed the formation of phase-pure ZnO nanostructures with a hexagonal wurtzite structure. The synthesized ZnO nanostructures were used as a catalyst in the photodegradation of methylene blue (MB), rhodamine B (RhB) and orange II (OII) under visible and near-UV irradiation. The results showed the highest efficiency of photodegradation of ZnO nanostructures for MB (80%), RhB (95%) and OII (66%) at pH values of 11, 9 and 5, respectively, in a 210 min time interval. In addition, the antimicrobial activity of the ZnO nanostructures using the agar well diffusion method against Bacillus pumilus and Sphingomonas paucimobilis showed the highest zones of inhibition of 18 mm and 20 mm, respectively. Hence, ZnO nanostructures have the potential to be used as a photocatalyst and bactericidal component.

We report a facile one-pot green synthesis of zinc oxide (ZnO) nanostructures using aqueous leaf extract of Dolichos Lablab L. as the reducing and capping agent.