Study of Structural and Optoelectronic Properties of Thin Films Made of a Few Layered WS2 Flakes

We report a surfactant-free exfoliation method of WS₂ flakes combined with a vacuum filtration method to fabricate thin (<50 nm) WS₂ films, that can be transferred on any arbitrary substrate. Films are composed of thin (<4 nm) single flakes, forming a large size uniform film, verified by AFM and SEM. Using statistical phonons investigation, we demonstrate structural quality and uniformity of the film sample and we provide first-order temperature coefficient χ, which shows linear dependence over 300–450 K temperature range. Electrical measurements show film sheet resistance R_S = 48 MΩ/□ and also reveal two energy band gaps related to the intrinsic architecture of the thin film. Finally, we show that optical transmission/absorption is rich above the bandgap exhibiting several excitonic resonances, and nearly feature-less below the bandgap.     

Room Temperature Ferromagnetic Mn:Ge(001)

We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), superconducting quantum interference device (SQUID), and magneto-optical Kerr effect (MOKE). Samples deposited at relatively elevated temperature (350 °C) exhibited the formation of ~5–8 nm diameter Mn₅Ge₃ and Mn₁₁Ge₈ agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe_~2.5 phase, or manganese diluted into the Ge(001) crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm) deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001). The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.     

Nickel Oxide Films Deposited by Sol-Gel Method: Effect of Annealing Temperature on Structural,Optical, and Electrical Properties

In our study, transparent and conductive films of NiO_x were successfully deposited by sol-gel technology. NiO_x films were obtained by spin coating on glass and Si substrates. The vibrational, optical, and electrical properties were studied as a function of the annealing temperatures from 200 to 500 °C. X-ray Photoelectron (XPS) spectroscopy revealed that NiO was formed at the annealing temperature of 400 °C and showed the presence of Ni⁺ states. The optical transparency of the films reached 90% in the visible range for 200 °C treated samples, and it was reduced to 76–78% after high-temperature annealing at 500 °C. The optical band gap of NiOx films was decreased with thermal treatments and the values were in the range of 3.92–3.68 eV. NiO_x thin films have good p-type electrical conductivity with a specific resistivity of about 4.8 × 10⁻³ Ω·cm. This makes these layers suitable for use as wideband semiconductors and as a hole transport layer (HTL) in transparent solar cells.     

Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique

Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP) and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.     

Size-Dependent Mechanical Properties of Amorphous SiO2 Nanowires: A Molecular Dynamics Study

Uniaxial tension tests were performed for amorphous SiO₂ nanowires using molecular dynamics simulation to probe the size effect on the mechanical properties and plastic deformation by varying the length of nanowires. The simulation results showed that the Young’s modulus of SiO₂ nanowires increased with the decrease of nanowires length due to its higher surface stress. The corresponding deformation of SiO₂ nanowires during tension exhibited two periods: atomic arrangement at small strain and plastic deformation at large strain. During the atomic arrangement period, the percentage variations of atom number of 2-coordinated silicon and 3-coordinated silicon (PCN2 and PCN3) decreased, while the percentage variations of atom number of 4-coordinated silicon, 5-coordinated silicon (PCN4 and PCN5) and the Si–O bond number (PCB) rose slightly with increasing strain, as the strain was less than 22%. The situation reversed at the plastic deformation period, owing to the numerous breakage of Si–O bonds as the strain grew beyond 22%. The size effect of nanowires radius was considered, finding that the Young’s modulus and fracture stress were higher for the larger nanowire because of fewer dangling bonds and coordinate defeats in the surface area. The elastic deformation occurred at a small strain for the larger nanowire, followed by the massive plastic deformation during tension. A brittle mechanism covers the fracture characteristics, irrespective of the nanowire size.     

Structural,Electrical and Optical Properties of Pyrrolo[1,2-i][1,7] Phenanthroline-Based Organic Semiconductors

This work reports a study on structural, electrical and optical properties of some recently synthesized pyrrolo[1,2-i][1,7] phenanthrolines derivatives in thin films. The thin films were deposited onto glass substrates by spin coating technique, using chloroform as solvent. The obtained films exhibited a polycrystalline structure with an n–type semiconductor behavior after heat treatment in the temperature range 293–543 K, specific to each sample. The thermal activation energy lies between 0.68 and 0.78 eV, while the direct optical band gap values were found in the range 4.17–4.24 eV. The electrical and optical properties of the investigated organic semiconductor films were discussed in relation to microstructural properties, determined by the molecular structure. The investigated organic compounds are promising for applications in organic optoelectronics and nanoelectronics.     

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.     

Effect of Sr Doping on Structural and Transport Properties of Bi2Te3

Search for doped superconducting topological insulators is of prime importance for new quantum technologies. We report on fabrication of Sr-doped Bi2Te3 single crystals. We found that Bridgman grown samples have p-type conductivity in the low 1019 cm−3, high mobility of 4000 cm2V−1s−1, crystal structure independent on nominal dopant content, and no signs of superconductivity. We also studied molecular beam epitaxy grown SrxBi2−xTe3 films on lattice matched (1 1 1) BaF2 polar surface. Contrary to the bulk crystals thin films have n-type conductivity. Carrier concentration, mobility and c-lattice constant demonstrate pronounced dependence on Sr concentration x. Variation of the parameters did not lead to superconductivity. We revealed, that transport and structural parameters are governed by Sr dopants incorporation in randomly inserted Bi bilayers into the parent matrix. Thus, our data shed light on the structural position of dopant in Bi2Te3 and should be helpful for further design of topological insulator-based superconductors.     

Polar and Non-Polar Zn1−xMgxO:Sb Grown by MBE

The article presents a systematic study of Sb-doped Zn_1−xMg_xO layers, with various concentrations of Mg, that were successfully grown by plasma-assisted MBE on polar a- and c-oriented and non-polar r-oriented sapphire substrates. X-ray diffraction confirmed the polar c-orientation of alloys grown on c-and a-oriented sapphire and non-polar structures grown on r-oriented substrates. A uniform depth distribution of the Sb dopant at level of 2 × 10²⁰ cm⁻³ was determined by SIMS measurements. Raman spectroscopy revealed the presence of Sb-related modes in all samples. It also showed that Mg alloying reduces the compressive strain associated with Sb doping in ZnO. XPS analysis indicates that the chemical state of Sb atoms in ZnMgO is 3+, suggesting a substitutional position of Sb_Zn, probably associated with two V_Zn vacancies. Luminescence and transmission spectra were measured to determine the band gaps of the Zn_1−xMg_xO layers. The band gap energies extracted from the transmittance measurements differ slightly for the a, c, and r substrate orientations, and the differences increase with increasing Mg content, despite identical growth conditions. The differences between the energy gaps, determined from transmission and PL peaks, are closely correlated with the Stokes shift and increase with the Mg content in the analyzed series of ZnMgO layers.     

Selective Electron Beam Melting (SEBM) of Pure Tungsten: Metallurgical Defects,Microstructure, Texture and Mechanical Properties

Effects of processing parameters on the metallurgical defects, microstructure, texture, and mechanical properties of pure tungsten samples fabricated by selective electron beam melting are investigated. SEBM-fabricated bulk tungsten samples with features of lack of fusion, sufficient fusion, and over-melting are examined. For samples upon sufficient fusion, an ultimate compressive strength of 1.76 GPa is achieved at the volumetric energy density of 900 J/mm³–1000 J/mm³. The excellent compressive strength is higher and the associated volumetric energy density is significantly lower than corresponding reported values in the literature. The average relative density of SEBM-fabricated samples is 98.93%. No microcracks, but only pores with diameters of few tens of micrometers, are found in SEBM-ed tungsten samples of sufficient fusion. Properties of samples by SEBM and selective laser melting (SLM) have also been compared. It is found that SLM-fabricated samples exhibit inevitable microcracks, and have a significantly lower ultimate compressive strength and a slightly lower relative density of 98.51% in comparison with SEBM-ed samples.     

Optical and UV-Aging Properties of LDH-Modified Bitumen

Layered double hydroxides (LDHs) are an ultraviolet-light (UV) resistant material. In this study, LDHs were used to modify bitumen. The optical and UV aging properties of LDHs modified bitumen were investigated. Firstly, the thin films of bitumen, with and without LDHs, were prepared. By using the UV-Vis spectrophotometer, absorbance, reflectance, and transmittance of bituminous thin film were evaluated. The morphology of LDHs-modified bitumen was observed by using fluorescence microscopy (FM). Finally, the aging resistance of LDH-modified bitumen was investigated by using the UV-aging oven. Results indicated that the LDHs, especially with 5 wt % in the bitumen, can effectively absorb and reflect the UV light and improve the UV-aging resistance of bitumen. This implied that the addition of LDHs into bitumen had the potential to prolong the service life of asphalt pavement.     

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters

The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (T_g) of 100–300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (a-Al₂O₃ or Si (100)) and a high sensitivity to T_g, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect. The average crystallite size increased from 20–30 nm for as grown samples to 80–100 nm after rapid thermal annealing, which affects carrier scattering. The ZnO layers deposited on silicon showed lower strain and dislocation density than on sapphire at the same T_g. The calculated half crystallite size (D/2) was higher than the Debye length (L_D) for all as grown and annealed ZnO films, except for annealed ZnO/Si films grown within the ALD window (100–200 °C), indicating different homogeneity of charge carrier distribution for annealed ZnO/Si and ZnO/a-Al₂O₃ layers. For as grown films the hydrogen impurity concentration detected via secondary ion mass spectrometry (SIMS) was 10²¹ cm⁻³ and was decreased by two orders of magnitude after annealing, accompanied by a decrease in Urbach energy in the ZnO/a-Al₂O₃ layers.     

Review of Low-Frequency Noise Properties of High-Power White LEDs during Long-Term Aging

Low-frequency noise investigation is a highly sensitive and very informative method for characterization of white nitride-based light-emitting diodes (LEDs) as well as for the evaluation of their degradation. We present a review of quality and reliability investigations of high-power (1 W and 3 W) white light-emitting diodes during long-term aging at the maximum permissible forward current at room temperature. The research was centered on the investigation of blue InGaN and AlInGaN quantum wells (QWs) LEDs covered by a YAG:Ce³⁺ phosphor layer for white light emission. The current-voltage, light output power, and low-frequency noise characteristics were measured. A broadband silicon photodetector and two-color (blue and red) selective silicon photodetectors were used for the LED output power detection, which makes it possible to separate physical processes related to the initial blue light radiation and the phosphor luminescence. Particular attention was paid to the measurement and interpretation of the simultaneous cross-correlation coefficient between electrical and optical fluctuations. The presented method enables to determine which part of fluctuations originates in the quantum well layer of the LED. The technique using the two-color selective photodetector enables investigation of changes in the noise properties of the main blue light source and the phosphor layer during the long-term aging.     

Coupling Influence between Recycled Ceramics and Grazed Hollow Beads on Mechanical Properties and Thermal Conductivity of Recycled Thermal Insulation Concrete

This paper investigated the influence of recycled ceramics and grazed hollow beads on the mechanical, thermal conductivity and material properties of concrete. The results showed that the concentration of recycled ceramics and grazed hollow beads has significant optimization on the workability and thermal properties of the concrete. However, the superabundant concentration can reduce the hydration degree of the concrete, which results in the suppressed production of C-S-H gel and the increase of material defects. In summary, considering the coordinated development of key factors such as thermal insulation properties, mechanical properties and microstructure, 10% RCE and 60% GHB are the optimal material system design methods.     

Impact of Packing and Processing Technique on Mechanical Properties of Acrylic Denture Base Materials

The fracture resistance of polymethylmethacrylate (PMMA) as the most popular denture base material is not satisfactory. Different factors can be involved in denture fracture. Among them, flexural fatigue and impact are the most common failure mechanisms of an acrylic denture base. It has been shown that there is a correlation between the static strength and fatigue life of composite resins. Therefore, the transverse strength of the denture base materials can be an important indicator of their service life. In order to improve the fracture resistance of PMMA, extensive studies have been carried out; however, only a few promising results were achieved, which are limited to some mechanical properties of PMMA at the cost of other properties. This study aimed at optimizing the packing and processing condition of heat-cured PMMA as a denture base resin in order to improve its biaxial flexural strength (BFS). The results showed that the plain type of resin with a powder/monomer ratio of 2.5:1 or less, packed conventionally and cured in a water bath for 2 h at 95 °C provides the highest BFS. Also, it was found that the performance of the dry heat processor is inconsistent with the number of flasks being loaded.     

Polypropylene/Short Glass Fibers Composites: Effects of Coupling Agents on Mechanical Properties,Thermal Behaviors,and Morphology

This study uses the melt compounding method to produce polypropylene (PP)/short glass fibers (SGF) composites. PP serves as matrix while SGF serves as reinforcement. Two coupling agents, maleic anhydride grafted polypropylene, (PP-g-MA) and maleic anhydride grafted styrene-ethylene-butylene-styrene block copolymer (SEBS-g-MA) are incorporated in the PP/SGF composites during the compounding process, in order to improve the interfacial adhesion and create diverse desired properties of the composites. According to the mechanical property evaluations, increasing PP-g-MA as a coupling agent provides the composites with higher tensile, flexural, and impact properties. In contrast, increasing SEBS-g-MA as a coupling agent provides the composites with decreasing tensile and flexural strengths, but also increasing impact strength. The DSC results indicate that using either PP-g-MA or SEBS-g-MA as the coupling agent increases the crystallization temperature. However, the melting temperature of PP barely changes. The spherulitic morphology results show that PP has a smaller spherulite size when it is processed with PP-g-MA or SEBS-g-MA as the coupling agent. The SEM results indicate that SGF is evenly distributed in PP matrices, but there are distinct voids between these two materials, indicating a poor interfacial adhesion. After PP-g-MA or SEBS-g-MA is incorporated, SGF can be encapsulated by PP, and the voids between them are fewer and indistinctive. This indicates that the coupling agents can effectively improve the interfacial compatibility between PP and SGF, and as a result improves the diverse properties of PP/SGF composites.     

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

Single-crystal atomic-layer-deposited (ALD) Y₂O₃ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 × 6 and GaAs(111)A-2 × 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001), the Y₂O₃ films are of a cubic phase and have (110) as the film normal, with the orientation relationship being determined: Y₂O₃(110)[001][1¯10]//GaAs(001)[110][11¯0]. On GaAs(111)A, the Y₂O₃ films are also of a cubic phase with (111) as the film normal, having the orientation relationship of Y₂O₃(111)[21¯1¯][011¯]//GaAs(111)[2¯11][01¯1]. The relevant orientation for the present/future integrated circuit platform is (001). The ALD-Y₂O₃/GaAs(001)-4 × 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage (CV) curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (D_it) is low of ~10¹² cm⁻²eV⁻¹ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D_it are the lowest ever achieved among all the ALD-oxides on GaAs(001).     

The Mechanical Properties of Aluminum Metal Matrix Composites Processed by High-Pressure Torsion and Powder Metallurgy

Al-Al₂O₃ and SiC metal matrix composites (MMCs) samples with different volume fractions up to 20% were produced by high-pressure torsion (HPT) using 10 GPa for 30 revolutions of Al-Al₂O₃, and SiC and powder metallurgy (PM). The effect of the processing method of micro-size Al MMCs on the density, microstructure evolution, mechanical properties, and tensile fracture mode was thoroughly investigated. HPT processing produces fully dense samples relative to those produced using powder metallurgy (PM). The HPT of the Al MMCs reduces the Al matrix grain size and fragmentation of the reinforcement particles. The Al matrix average grain size decreased to 0.39, 0.23, and 0.2 µm after the HPT processing of Al, Al-20% Al₂O₃, and SiC samples. Moreover, Al₂O₃ and SiC particle sizes decreased from 31.7 and 25.5 µm to 0.15 and 0.13 µm with a 99.5% decrease. The production of ultrafine grain (UFG) composite samples effectively improves the microhardness and tensile strength of the Al and Al MMCs by 31–88% and 10–110% over those of the PM-processed samples. The good bonding between the Al matrix and reinforcement particles noted in the HPTed Al MMCs increases the strength relative to the PM samples. The tensile fracture surface morphology results confirm the tensile properties results.     

Multicomponent Aging Al-Li-Based Alloys of the Latest Generation: Structural and Phase Transformations,Treatments, Properties,and Future Prospects

An overview of modern material science problems is presented for ultralightweight high-modulus commercial Al-Li-based alloys in historical retrospect. Numerous particular examples of the Soviet and Russian aviation whose various designs were made of these alloys confirm their successful innovative potential. The key regularities of multicomponent alloying are discussed for the master alloys and modern commercial Al-Li-based alloys of the latest generation; the features typical of their microstructures, phase composition, and properties formed during aging are analyzed. The main mechanisms of phase formation are generalized for standard thermal and thermomechanical treatments. Recent original achievements have been obtained in designing of unique structural and phase transformations in these commercial alloys by means of methods of severe plastic deformations followed by heat treatment and storage. Using the example of three Russian commercial alloys of last generation, the basic principles of creating and controlling an ultrafine-grained structure, the origin and growth of stable nanophases of various types and chemical composition that determine the physicomechanical properties of alloys are established.     

Microstructural and Optical Properties of MgAl2O4 Spinel: Effects of Mechanical Activation,Y2O3 and Graphene Additions

Magnesium aluminate and other alumina-based spinels attract attention due to their high hardness, high mechanical strength, and low dielectric constant. MgAl₂O₄ was produced by a solid-state reaction between MgO and α-Al₂O₃ powders. Mechanical activation for 30 min in a planetary ball mill was used to increase the reactivity of powders. Yttrium oxide and graphene were added to prevent abnormal grain growth during sintering. Samples were sintered by hot pressing under vacuum at 1450 °C. Phase composition and microstructure of sintered specimens were characterized by X-ray powder diffraction and scanning electron microscopy. Rietveld analysis revealed 100% pure spinel phase in all sintered specimens, and a decrease in crystallite size with the addition of yttria or graphene. Density measurements indicated that the mechanically activated specimen reached 99.6% relative density. Furthermore, the highest solar absorbance and highest spectral selectivity as a function of temperature were detected for the mechanically activated specimen with graphene addition. Mechanical activation is an efficient method to improve densification of MgAl₂O₄ prepared from mixed oxide powders, while additives improve microstructure and optical properties.