Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters

The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (T_g) of 100–300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (a-Al₂O₃ or Si (100)) and a high sensitivity to T_g, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect. The average crystallite size increased from 20–30 nm for as grown samples to 80–100 nm after rapid thermal annealing, which affects carrier scattering. The ZnO layers deposited on silicon showed lower strain and dislocation density than on sapphire at the same T_g. The calculated half crystallite size (D/2) was higher than the Debye length (L_D) for all as grown and annealed ZnO films, except for annealed ZnO/Si films grown within the ALD window (100–200 °C), indicating different homogeneity of charge carrier distribution for annealed ZnO/Si and ZnO/a-Al₂O₃ layers. For as grown films the hydrogen impurity concentration detected via secondary ion mass spectrometry (SIMS) was 10²¹ cm⁻³ and was decreased by two orders of magnitude after annealing, accompanied by a decrease in Urbach energy in the ZnO/a-Al₂O₃ layers.     

Origin of Mangetotransport Properties in APCVD Deposited Tin Oxide Thin Films

Transparent conducting oxides (TCO) with high electrical conductivity and at the same time high transparency in the visible spectrum are an important class of materials widely used in many devices requiring a transparent contact such as light-emitting diodes, solar cells and display screens. Since the improvement of electrical conductivity usually leads to degradation of optical transparency, a fine-tuning sample preparation process and a better understanding of the correlation between structural and transport properties is necessary for optimizing the properties of TCO for use in such devices. Here we report a structural and magnetotransport study of tin oxide (SnO₂), a well-known and commonly used TCO, prepared by a simple and relatively cheap Atmospheric Pressure Chemical Vapour Deposition (APCVD) method in the form of thin films deposited on soda-lime glass substrates. The thin films were deposited at two different temperatures (which were previously found to be close to optimum for our setup), 590 °C and 610 °C, and with (doped) or without (undoped) the addition of fluorine dopants. Scanning Electron Microscopy (SEM) and Grazing Incidence X-ray Diffraction (GIXRD) revealed the presence of inhomogeneity in the samples, on a bigger scale in form of grains (80–200 nm), and on a smaller scale in form of crystallites (10–25 nm). Charge carrier density and mobility extracted from DC resistivity and Hall effect measurements were in the ranges 1–3 × 10²⁰ cm⁻³ and 10–20 cm²/Vs, which are typical values for SnO₂ films, and show a negligible temperature dependence from room temperature down to −269 °C. Such behaviour is ascribed to grain boundary scattering, with the interior of the grains degenerately doped (i.e., the Fermi level is situated well above the conduction band minimum) and with negligible electrostatic barriers at the grain boundaries (due to high dopant concentration). The observed difference for factor 2 in mobility among the thin-film SnO₂ samples most likely arises due to the difference in the preferred orientation of crystallites (texture coefficient).     

Growth and Investigation of Annealing Effects on Ternary Cd1−xMgxO Nanocomposit Thin Films

Thin films of Cd_1−xMg_xO (CdMgO) (0 ≤ x ≤ 1) were investigated by depositing the films on glass substrates using the co-evaporation technique. The structural, surface morphological, optical, and electrical characteristics of these films were studied as a function of Mg content after annealing at 350 °C. The XRD analysis showed that the deposited films had an amorphous nature. The grain size of the films reduced as the Mg concentration increased, as evidenced by the surface morphology, and EDAX supported the existence of Mg content. It was observed that as the films were annealed, the transmittance of the CdMgO films saw an increase of up to 85%. The blue shift of the absorption edge was observed by the increase of Mg content, which was useful for enhancing the efficiency of solar cells. The optical band gap increased from 2.45 to 6.02 eV as the Mg content increased. With increased Mg content, the refractive index reduced from 2.49 to 1.735, and electrical resistivity increased from 535 Ω cm to 1.57 × 10⁶ Ω cm.     

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

In this study, silicon nitride (SiN_x) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiN_x/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiN_x thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiN_x thin films were a working pressure of 800 × 10⁻³ Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH₄ = 20 sccm and NH₃ = 210 sccm, respectively. For the GZO/PI and GZO-SiN_x/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiN_x/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiN_x/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiN_x/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiN_x/PI.     

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrO_x; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 10¹² cm⁻² for as-deposited sample to 4.55 × 10¹² cm⁻² for the 800 °C annealed one. In addition, the leakage current density increase from about 10⁻⁶ A/cm² at V_g = +0.5 V for the as-deposited sample to 10⁻³ A/cm² at V_g = +0.5 V for the 900 °C annealed one.     

Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se2 Thin Films

Cu(In,Ga)Se₂ (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.     

Influence of Cu Content on Structure,Thermal Stability and Magnetic Properties in Fe72−xNi8Nb4CuxSi2B14 Alloys

The effect of substitution of Fe by Cu on the crystal structure and magnetic properties of Fe_72−xNi₈Nb₄Cu_xSi₂B₁₄ alloys (x = 0.6, 1.1, 1.6 at.%) in the form of ribbons was investigated. The chemical composition of the materials was established on the basis of the calculated minima of thermodynamic parameters: Gibbs free energy of amorphous phase formation ΔG^amorph (minimum at 0.6 at.% of Cu) and Gibbs free energy of mixing ΔG^mix (minimum at 1.6 at.% of Cu). The characteristic crystallization temperatures T_x1onset and T_x1 of the alpha-iron phase together with the activation energy E_a for the as-spun samples were determined by differential scanning calorimetry (DSC) with a heating rate of 10–100 °C/min. In order to determine the optimal soft magnetic properties, the wound cores were subjected to a controlled isothermal annealing process in the temperature range of 340–640 °C for 20 min. Coercivity Hc, saturation induction Bs and core power losses at B = 1 T and frequency f = 50 Hz P_10/50 were determined for all samples. Moreover, for the samples with the lowest Hc and P_10/50, the magnetic losses were determined in a wider frequency range 50 Hz–400 kHz. The real and imaginary parts of the magnetic permeability µ′, µ″ along with the cut-off frequency were determined for the samples annealed at 360, 460, and 560 °C. The best soft magnetic properties (i.e., the lowest value of Hc and P_10/50) were observed for samples annealed at 460 °C, with Hc = 4.88–5.69 A/m, Bs = 1.18–1.24 T, P_10/50 = 0.072–0.084 W/kg, µ′ = 8350–10,630 and cutoff frequency at 8–9.3 × 10⁴ Hz. The structural study of as-spun and annealed ribbons was carried out using X-ray diffraction (XRD) and a transmission electron microscope (TEM).     

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique,Starting from Zinc Acetylacetonate and Indium Chloride

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10⁻³ Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002) to (101) planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.     

Enhanced NO2 Sensing Performance of Graphene with Thermally Induced Defects

This paper demonstrates the enhanced NO₂ sensing performance of graphene with defects generated by rapid thermal annealing (RTA). A high temperature of RTA (300–700 °C) was applied to graphene under an argon atmosphere to form defects on sp² carbon lattices. The density of defects proportionally increased with increasing the RTA temperature. Raman scattering results confirmed significant changes in sp² bonding. After 700 °C RTA, I_D/I_G, I_2D/I_G, and FWHM (full width at half maximum)(G) values, which are used to indirectly investigate carbon-carbon bonds’ chemical and physical properties, were markedly changed compared to the pristine graphene. Further evidence of the thermally-induced defects on graphene was found via electrical resistance measurements. The electrical resistance of the RTA-treated graphene linearly increased with increasing RTA temperature. Meanwhile, the NO₂ response of graphene sensors increased from 0 to 500 °C and reached maximum (R = ~24%) at 500 °C. Then, the response rather decreased at 700 °C (R = ~14%). The results imply that rich defects formed at above a critical temperature (~500 °C) may damage electrical paths of sp² chains and thus deteriorate NO₂ response. Compared to the existing functionalization process, the RTA treatment is very facile and allows precise control of the NO₂ sensing characteristics, contributing to manufacturing commercial low-cost, high-performance, integrated sensors.     

Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films

In this study, molybdenum disulfide (MoS₂) film samples were prepared at different temperatures and annealed through magnetron sputtering technology. The surface morphology, crystal structure, bonding structure, and optical properties of the samples were characterized and analyzed. The surface of the MoS₂ films prepared by radio frequency magnetron sputtering is tightly coupled and well crystallized, the density of the films decreases, and their voids and grain size increase with the increase in deposition temperature. The higher the deposition temperature is, the more stable the MoS₂ films deposited will be, and the 200 °C deposition temperature is an inflection point of the film stability. Annealing temperature affects the structure of the films, which is mainly related to sulfur and the growth mechanism of the films. Further research shows that the optical band gaps of the films deposited at different temperatures range from 0.92 eV to 1.15 eV, showing semiconductor bandgap characteristics. The optical band gap of the films deposited at 200 °C is slightly reduced after annealing in the range of 0.71–0.91 eV. After annealing, the optical band gap of the films decreases because of the two exciton peaks generated by the K point in the Brillouin zone of MoS₂. The blue shift of the K point in the Brillouin zone causes a certain change in the optical band gap of the films.     

Effect of Heating Modes on Reactive Sintering of Ca3Co4O9 Ceramics

The traditional solid-state reaction method was employed to synthesize bulk calcium cobaltite (Ca349/Ca₃Co₄O₉) ceramics via ball milling the precursor mixture. The samples were compacted using conventional sintering (CS) and spark plasma sintering (SPS) at 850, 900, and 950 °C. The X-ray diffraction (XRD) pattern indicates the presence of the Ca349 phase for samples sintered at 850 and 900 °C. In addition, SPS fosters higher densification (81.18%) than conventional sintering (50.76%) at elevated sintering temperatures. The thermo-gravimetric analysis (TGA) and differential thermal analysis (DTA) performed on the precursor mixture reported a weight loss of ~25.23% at a temperature range of 600–820 °C. This current work aims to analyze the electrical properties (Seebeck coefficient (s), electrical resistivity (ρ), and power factor) of sintered samples as a function of temperature (35–500 °C). It demonstrates that the change in sintering temperature (conventional sintering) did not evince any significant change in the Seebeck coefficient (113–142 μV/K). However, it reported a low resistivity of 153–132 μΩ-m and a better power factor (82–146.4 μW/mK²) at 900 °C. On the contrary, the SPS sintered samples recorded a higher Seebeck coefficient of 121–181 μV/K at 900 °C. Correspondingly, the samples sintered at 950 °C delineated a low resistivity of 145–158 μΩ-m and a better power factor (97–152 μW/mK²).     

Investigation of Thermal Stability of Microstructure and Mechanical Properties of Bimetallic Fine-Grained Wires from Al–0.25%Zr–(Sc,Hf) Alloys

Thermal stability of composite bimetallic wires from five novel microalloyed aluminum alloys with different contents of alloying elements (Zr, Sc, and Hf) is investigated. The alloy workpieces were obtained by induction-casting in a vacuum, preliminary severe plastic deformation, and annealing providing the formation of a uniform microstructure and the nucleation of stabilizing intermetallide Al₃(Zr,Sc,Hf) nanoparticles. The wires of 0.26 mm in diameter were obtained by simultaneous deformation of the Al alloy with Cu shell. The bimetallic wires demonstrated high strength and improved thermal stability. After annealing at 450–500 °C, a uniform fine-grained microstructure formed in the wire (the mean grain sizes in the annealed Al wires are 3–5 μm). An increased hardness and strength due to nucleation of the Al₃(Sc,Hf) particles was observed. A diffusion of Cu from the shell into the surface layers of the Al wire was observed when heating up to 400–450 °C. The Cu diffusion depth into the annealed Al wire surfaces reached 30–40 μm. The maximum elongation to failure of the wires (20–30%) was achieved after annealing at 350 °C. The maximum values of microhardness (H_v = 500–520 MPa) and of ultimate strength (σ_b = 195–235 MPa) after annealing at 500 °C were observed for the wires made from the Al alloys alloyed with 0.05–0.1% Sc.     

Structural,Optical and Mechanical Properties of Nanocrystalline Molybdenum Thin Films Deposited under Variable Substrate Temperature

Molybdenum (Mo), which is one among the refractory metals, is a promising material with a wide variety of technological applications in microelectronics, optoelectronics, and energy conversion and storage. However, understanding the structure–property correlation and optimization at the nanoscale dimension is quite important to meet the requirements of the emerging nanoelectronics and nanophotonics. In this context, we focused our efforts to derive a comprehensive understanding of the nanoscale structure, phase, and electronic properties of nanocrystalline Mo films with variable microstructure and grain size. Molybdenum films were deposited under varying temperature (25–500 °C), which resulted in Mo films with variable grain size of 9–22 nm. The grazing incidence X-ray diffraction analyses indicate the (110) preferred growth behavior the Mo films, though there is a marked decrease in hardness and elastic modulus values. In particular, there is a sizable difference in maximum and minimum elastic modulus values; the elastic modulus decreased from ~460 to 260–280 GPa with increasing substrate temperature from 25–500 °C. The plasticity index and wear resistance index values show a dramatic change with substrate temperature and grain size. Additionally, the optical properties of the nanocrystalline Mo films evaluated by spectroscopic ellipsometry indicate a marked dependence on the growth temperature and grain size. This dependence on grain size variation was particularly notable for the refractive index where Mo films with lower grain size fell in a range between ~2.75–3.75 across the measured wavelength as opposed to the range of 1.5–2.5 for samples deposited at temperatures of 400–500 °C, where the grain size is relatively higher. The conductive atomic force microscopy (AFM) studies indicate a direct correlation with grain size variation and grain versus grain boundary conduction; the trend noted was improved electrical conductivity of the Mo films in correlation with increasing grain size. The combined ellipsometry and conductive AFM studies allowed us to optimize the structure–property correlation in nanocrystalline Mo films for application in electronics and optoelectronics.     

Effects of Sc and Zr Addition on Microstructure and Mechanical Properties of AA5182

The effects of 0.1 wt.% Sc and 0.1 wt.% Zr addition in AA5182 on microstructure and mechanical properties were investigated. Results show that Al₃(Sc_xZr_1−x) dispersoids formed in AA5182. Observation of ingots microstructures showed that the grain size of 5182-Sc-Zr alloy was 56% lower than that of based AA5182. Isothermal annealing between 230 °C and 500 °C for 2 h was performed to study the recrystallization, tensile properties and dispersoid coarsening. The recrystallization was inhibited by the dispersoids, and the alloy microstructure remained deformed after annealing. Al₃(Sc_xZr_1−x) in AA5182 was stable when annealing below 400 °C, while parts of dispersoids coarsened significantly when heating at 500 °C. The addition of Sc and Zr allowed YS of 5182 alloy to achieve 247.8 MPa, which is 100 MPa higher than the corresponding AA5182. The contributions of Orowan strengthening and grain boundary strengthening were obtained by calculation.     

Mechanical Properties of Titanium Nitride Nanocomposites Produced by Chemical Precursor Synthesis Followed by High-P,T Treatment

We investigated the high-P,T annealing and mechanical properties of nanocomposite materials with a highly nitrided bulk composition close to Ti₃N₄. Amorphous solids were precipitated from solution by ammonolysis of metal dialkylamide precursors followed by heating at 400–700 °C in flowing NH₃ to produce reddish-brown amorphous/nanocrystalline materials. The precursors were then densified at 2 GPa and 200–700 °C to form monolithic ceramics. There was no evidence for N₂ loss during the high-P,T treatment. Micro- and nanoindentation experiments indicate hardness values between 4–20 GPa for loads ranging between 0.005–3 N. Young''s modulus values were measured to lie in the range 200–650 GPa. Palmqvist cracks determined from microindentation experiments indicate fracture toughness values between 2–4 MPa·m^1/2 similar to Si₃N₄, SiC and Al₂O₃. Significant variations in the hardness may be associated with the distribution of amorphous/crystalline regions and the very fine grained nature (~3 nm grain sizes) of the crystalline component in these materials.     

Synthesis of High Crystallinity 1.13 nm Tobermorite and Xonotlite from Natural Rocks,Their Properties and Application for Heat-Resistant Products

The main measure to reduce energy losses is the usage of insulating materials. When the temperature exceeds 500 °C, silicate and ceramic products are most commonly used. In this work, high-crystallinity 1.13 nm tobermorite and xonotlite were hydrothermally synthesized from lime and Ca–Si sedimentary rock, opoka. By XRD, DSC, TG and dilatometry methods, it has been shown that 1.13 nm tobermorite becomes the predominant compound in stirred suspensions at 200 °C after 4 h of synthesis in the mixture with a molar ratio CaO/SiO₂ = 0.83. It is suitable for the production of insulating products with good physical–mechanical properties (average density < 200 kg·m⁻¹, compressive strength ~0.9 MPa) but has a limited operating temperature (up to 700 °C). Sufficiently pure xonotlite should be used to obtain materials with a higher operating temperature. Even small amounts of semi-amorphous C–S–H(I) significantly increase its linear shrinkage during firing. It has also been observed that an increase in the strength values of the samples correlated well with the increase in the size of xonotlite crystallites. The optimal technological parameters are as follows: molar ratio of mixture CaO/SiO₂ = 1.2; water/solid ratio W/S = 20.0; duration of hydrothermal synthesis at 220 °C—8 h, duration of autoclaving at 220 °C—4 h. The average density of the samples was ~180 kg·m⁻¹, the operating temperature was at least 1000 °C, and the compressive strengths exceeded 1.5 MPa.     

Annealing Effect on the Characteristics of Co40Fe40W10B10 Thin Films on Si(100) Substrate

This research explores the behavior of Co₄₀Fe₄₀W₁₀B₁₀ when it is sputtered onto Si(100) substrates with a thickness (t_f) ranging from 10 nm to 100 nm, and then altered by an annealing process at temperatures of 200 °C, 250 °C, 300 °C, and 350 °C, respectively. The crystal structure and grain size of Co₄₀Fe₄₀W₁₀B₁₀ films with different thicknesses and annealing temperatures are observed and estimated by an X-ray diffractometer pattern (XRD) and full-width at half maximum (FWHM). The XRD of annealing Co₄₀Fe₄₀W₁₀B₁₀ films at 200 °C exhibited an amorphous status due to insufficient heating drive force. Moreover, the thicknesses and annealing temperatures of body-centered cubic (BCC) CoFe (110) peaks were detected when annealing at 250 °C with thicknesses ranging from 80 nm to 100 nm, annealing at 300 °C with thicknesses ranging from 50 nm to 100 nm, and annealing at 350 °C with thicknesses ranging from 10 nm to 100 nm. The FWHM of CoFe (110) decreased and the grain size increased when the thickness and annealing temperature increased. The CoFe (110) peak revealed magnetocrystalline anisotropy, which was related to strong low-frequency alternative-current magnetic susceptibility (χ_ac) and induced an increasing trend in saturation magnetization (Ms) as the thickness and annealing temperature increased. The contact angles of all Co₄₀Fe₄₀W₁₀B₁₀ films were less than 90°, indicating the hydrophilic nature of Co₄₀Fe₄₀W₁₀B₁₀ films. Furthermore, the surface energy of Co₄₀Fe₄₀W₁₀B₁₀ presented an increased trend as the thickness and annealing temperature increased. According to the results, the optimal conditions are a thickness of 100 nm and an annealing temperature of 350 °C, owing to high χ_ac, large Ms, and strong adhesion; this indicates that annealing Co₄₀Fe₄₀W₁₀B₁₀ at 350 °C and with a thickness of 100 nm exhibits good thermal stability and can become a free or pinned layer in a magnetic tunneling junction (MTJ) application.     

The Impact of Hydrogenation on Structural and Superconducting Properties of FeTe0.65Se0.35 Single Crystals

Properties of FeTe_0.65Se_0.35 single crystals, with the onset of critical temperature (T_c^onset) at 15.5 K, were modified via hydrogenation performed for 10–90 h, at temperatures ranging from 20 to 250 °C. It was found that the tetragonal matrix became unstable and crystal symmetry lowered for the samples hydrogenated already at 200 °C. However, matrix symmetry was not changed and the crystal was not destroyed after hydrogenation at 250 °C. Bulk T_c^bulk, determined at the middle of the superconducting transition, which is equal to 12–13 K for the as grown FeTe_0.65Se_0.35, rose by more than 1 K after hydrogenation. The critical current density studied in magnetic field up to 70 kOe increased 4–30 times as a consequence of hydrogenation at 200 °C for 10 h. Electron paramagnetic resonance measurements also showed higher values of T_c^bulk for hydrogenated crystals. Thermal diffusion of hydrogen into the crystals causes significant structural changes, leads to degeneration of crystal quality, and significantly alters superconducting properties. After hydrogenation, a strong correlation was noticed between the structural changes and changes in the parameters characterizing the superconducting state.     

The Optical and Thermo-Optical Properties of Non-Stoichiometric Silicon Nitride Layers Obtained by the PECVD Method with Varying Levels of Nitrogen Content

In this paper, we investigated the optical and thermo-optical properties of a-SiN_x:H layers obtained using the PECVD technique. SiN_x:H layers with different refractive indices were obtained from silane and ammonia as precursor gases. Surface morphology and chemical composition studies were investigated using atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and energy dispersive spectrometry methods. Spectroscopic ellipsometry was used to determine the optical indexes, thicknesses and optical bandgap of the films. The main purpose was to identify the thermo-optical characteristics of layers with different refractive indexes. Thermo-optical studies were performed to determine the temperature hysteresis of optical parameters. These measurements showed that after annealing up to 300 °C and subsequent cooling, the value of optical parameters returned to the initial values.     

Development of Ni-Sr(V,Ti)O3-δ Fuel Electrodes for Solid Oxide Fuel Cells

A series of strontium titanates-vanadates (STVN) with nominal cation composition Sr_1-xTi_1-y-zV_yNi_zO_3-δ (x = 0–0.04, y = 0.20–0.40 and z = 0.02–0.12) were prepared by a solid-state reaction route in 10% H₂–N₂ atmosphere and characterized under reducing conditions as potential fuel electrode materials for solid oxide fuel cells. Detailed phase evolution studies using XRD and SEM/EDS demonstrated that firing at temperatures as high as 1200 °C is required to eliminate undesirable secondary phases. Under such conditions, nickel tends to segregate as a metallic phase and is unlikely to incorporate into the perovskite lattice. Ceramic samples sintered at 1500 °C exhibited temperature-activated electrical conductivity that showed a weak p(O₂) dependence and increased with vanadium content, reaching a maximum of ~17 S/cm at 1000 °C. STVN ceramics showed moderate thermal expansion coefficients (12.5–14.3 ppm/K at 25–1100 °C) compatible with that of yttria-stabilized zirconia (8YSZ). Porous STVN electrodes on 8YSZ solid electrolytes were fabricated at 1100 °C and studied using electrochemical impedance spectroscopy at 700–900 °C in an atmosphere of diluted humidified H₂ under zero DC conditions. As-prepared STVN electrodes demonstrated comparatively poor electrochemical performance, which was attributed to insufficient intrinsic electrocatalytic activity and agglomeration of metallic nickel during the high-temperature synthetic procedure. Incorporation of an oxygen-ion-conducting Ce_0.9Gd_0.1O_2-δ phase (20–30 wt.%) and nano-sized Ni as electrocatalyst (≥1 wt.%) into the porous electrode structure via infiltration resulted in a substantial improvement in electrochemical activity and reduction of electrode polarization resistance by 6–8 times at 900 °C and ≥ one order of magnitude at 800 °C.