Enhanced Cyclability of Cr8O21 Cathode for PEO-Based All-Solid-State Lithium-Ion Batteries by Atomic Layer Deposition of Al2O3

Cr₈O₂₁ can be used as the cathode material in all-solid-state batteries with high energy density due to its high reversible specific capacity and high potential plateau. However, the strong oxidation of Cr₈O₂₁ leads to poor compatibility with polymer-based solid electrolytes. Herein, to improve the cycle performance of the battery, Al₂O₃ atomic layer deposition (ALD) coating is applied on Cr₈O₂₁ cathodes to modify the interface between the electrode and the electrolyte. X-ray photoelectron spectroscopy, scanning electron microscope, transmission electron microscope, and Fourier transform infrared spectroscopy, etc., are used to estimate the morphology of the ALD coating and the interface reaction mechanism. The electrochemical properties of the Cr₈O₂₁ cathodes are investigated. The results show that the uniform and dense Al₂O₃ layer not only prevents the polyethylene oxide from oxidization but also enhances the lithium-ion transport. The 12-ALD-cycle-coated electrode with approximately 4 nm Al₂O₃ layer displays the optimal cycling performance, which delivers a high capacity of 260 mAh g⁻¹ for the 125th cycle at 0.1C with a discharge-specific energy of 630 Wh kg⁻¹.     

Characterization of Al2O3 Matrix Composites Fabricated via the Slip Casting Method Using NiAl-Al2O3 Composite Powder

This work aimed to characterize Al₂O₃ matrix composites fabricated by the slip casting method using NiAl-Al₂O₃ composite powder as the initial powder. The composite powder, consisting of NiAl + 30 wt.% Al₂O₃, was obtained by mechanical alloying of Al₂O₃, Al, and Ni powders. The composite powder was added to the Al₂O₃ powder to prepare the final powder for the slip casting method. The stained composite samples presented high density. EDX and XRD analyses showed that the sintering process of the samples in an air atmosphere caused the formation of the NiAl₂O₄ spinel phase. Finally, the phase composition of the composites changed from the initial phases of Al₂O₃ and NiAl to Al₂O₃, Ni, and NiAl₂O₄. However, in the area of Ni, fine Al₂O₃ particles remaining from the initial composite powder were visible. It can be concluded that after slip casting, after starting with Al₂O₃ and the composite powder (NiAl-Al₂O₃) and upon sintering in air, ceramic matrix composites with Ni and NiAl₂O₄ phases, complex structures, high-quality sintered samples, and favorable mechanical properties were obtained.     

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers

Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k charge trapping layer/tunnel oxide/Si (MOHOS) structures from the viewpoint of their application as memory cells in charge trapping flash memories. Two different stacks, HfO₂/Al₂O₃ nanolaminates and Al-doped HfO₂, are used as the charge trapping layer, and SiO₂ (of different thickness) or Al₂O₃ is used as the tunneling oxide. The charge trapping and memory windows, and retention and endurance characteristics are studied to assess the charge storage ability of memory cells. The influence of post-deposition oxygen annealing on the memory characteristics is also studied. The results reveal that these characteristics are most strongly affected by post-deposition oxygen annealing and the type and thickness of tunneling oxide. The stacks before annealing and the 3.5 nm SiO₂ tunneling oxide have favorable charge trapping and retention properties, but their endurance is compromised because of the high electric field vulnerability. Rapid thermal annealing (RTA) in O₂ significantly increases the electron trapping (hence, the memory window) in the stacks; however, it deteriorates their retention properties, most likely due to the interfacial reaction between the tunneling oxide and the charge trapping layer. The O₂ annealing also enhances the high electric field susceptibility of the stacks, which results in better endurance. The results strongly imply that the origin of electron and hole traps is different—the hole traps are most likely related to HfO₂, while electron traps are related to Al₂O₃. These findings could serve as a useful guide for further optimization of MOHOS structures as memory cells in NVM.     

Study on Electromagnetic Performance of La0.5Sr0.5CoO3/Al2O3 Ceramic with Metal Periodic Structure at X-Band

A radar absorbing material (RAM) is designed by combining the La_0.5Sr_0.5CoO₃/Al₂O₃ ceramic and the metal periodic structure. The phase constitution and the microscopic morphology of the La_0.5Sr_0.5CoO₃/Al₂O₃ ceramic are examined, respectively. The electrical properties and magnetic properties of the La_0.5Sr_0.5CoO₃/Al₂O₃ ceramic are also measured at the temperature range of 25~500 °C. Based on the experimental and simulation results, the changes in the reflection loss along with the structure parameters of RAM are analyzed at 500 °C. The analytical results show that the absorption property of the RAM increases with the increase in the temperature. When the thickness of the La_0.5Sr_0.5CoO₃/Al₂O₃ ceramic is 1.5 mm, a reflection loss <−10 dB can be obtained in the frequency range from approximately 8.2 to 16 GHz. More than 90% microwave energy can be consumed in the RAM, which may be applied in the high temperature environment.     

Characterization of Al2O3 Samples and NiAl–Al2O3 Composite Consolidated by Pulse Plasma Sintering

The paper describes an investigation of Al₂O₃ samples and NiAl–Al₂O₃ composites consolidated by pulse plasma sintering (PPS). In the experiment, several methods were used to determine the properties and microstructure of the raw Al₂O₃ powder, NiAl–Al₂O₃ powder after mechanical alloying, and samples obtained via the PPS. The microstructural investigation of the alumina and composite properties involves scanning electron microscopy (SEM) analysis and X-ray diffraction (XRD). The relative densities were investigated with helium pycnometer and Archimedes method measurements. Microhardness analysis with fracture toughness (K_IC) measures was applied to estimate the mechanical properties of the investigated materials. Using the PPS technique allows the production of bulk Al₂O₃ samples and intermetallic ceramic composites from the NiAl–Al₂O₃ system. To produce by PPS method the NiAl–Al₂O₃ bulk materials initially, the composite powder NiAl–Al₂O₃ was obtained by mechanical alloying. As initial powders, Ni, Al, and Al₂O₃ were used. After the PPS process, the final composite materials consist of two phases: Al₂O₃ located within the NiAl matrix. The intermetallic ceramic composites have relative densities: for composites with 10 wt.% Al₂O₃ 97.9% and samples containing 20 wt.% Al₂O₃ close to 100%. The hardness of both composites is equal to 5.8 GPa. Moreover, after PPS consolidation, NiAl–Al₂O₃ composites were characterized by high plasticity. The presented results are promising for the subsequent study of consolidation composite NiAl–Al₂O₃ powder with various initial contributions of ceramics (Al₂O₃) and a mixture of intermetallic–ceramic composite powders with the addition of ceramics to fabricate composites with complex microstructures and properties. In composites with complex microstructures that belong to the new class of composites, in particular, the synergistic effect of various mechanisms of improving the fracture toughness will be operated.     

Pulse Plasma Sintering of NiAl-Al2O3 Composite Powder Produced by Mechanical Alloying with Contribution of Nanometric Al2O3 Powder

NiAl-Al₂O₃ composites, fabricated from the prepared composite powders by mechanical alloying and then consolidated by pulse plasma sintering, were presented. The use of nanometric alumina powder for reinforcement of a synthetized intermetallic matrix was the innovative concept of this work. Moreover, this is the first reported attempt to use the Pulse Plasma Sintering (PPS) method to consolidate composite powder with the contribution of nanometric alumina powder. The composite powders consisting of the intermetallic phase NiAl and Al₂O₃ were prepared by mechanical alloying from powder mixtures containing Ni-50at.%Al with the contribution of 10 wt.% or 20 wt.% nanometric aluminum oxide. A nanocrystalline NiAl matrix was formed, with uniformly distributed Al₂O₃ inclusions as reinforcement. The PPS method successfully consolidated NiAl-Al₂O₃ composite powders with limited grain growth in the NiAl matrix. The appropriate sintering temperature for composite powder was selected based on analysis of the grain growth and hardness of Al₂O₃ subjected to PPS consolidation at various temperatures. As a result of these tests, sintering of the NiAl-Al₂O₃ powders was carried out at temperatures of 1200 °C, 1300 °C, and 1400 °C. The microstructure and properties of the initial powders, composite powders, and consolidated bulk composite materials were characterized by SEM, EDS, XRD, density, and hardness measurements. The hardness of the ultrafine-grained NiAl-Al₂O₃ composites obtained via PPS depends on the Al₂O₃ content in the composite, as well as the sintering temperature applied. The highest values of the hardness of the composites were obtained after sintering at the lowest temperature (1200 °C), reaching 7.2 ± 0.29 GPa and 8.4 ± 0.07 GPa for 10 wt.% Al₂O₃ and 20 wt.% Al₂O₃, respectively, and exceeding the hardness values reported in the literature. From a technological point of view, the possibility to use sintering temperatures as low as 1200 °C is crucial for the production of fully dense, ultrafine-grained composites with high hardness.     

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (⁶⁰Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO₂/Al₂O₃ stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O₂ and N₂ annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O₂ annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.     

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Interface-formation processes in atomic layer deposition (ALD) of Al₂O₃ on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al₂O₃ ALD was carried out by repeating a cycle of Al(CH₃)₃ (trimethylaluminum, TMA) adsorption and oxidation by H₂O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al₂O₃ bulk-film growth started from the third cycle. These observations indicated that the Al₂O₃/InGaAs interface was formed by reduction of the surface oxides with TMA. In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS) properties, capacitors and field-effect transistors (FETs) were fabricated by changing the TMA dosage during the interface formation stage. The frequency dispersion of the capacitance-voltage characteristics was reduced by employing a high TMA dosage. The high TMA dosage, however, induced fixed negative charges at the MIS interface and degraded channel mobility.     

The Vital Role of La2O3 on the La2O3-CaO-B2O3-SiO2 Glass System for Shielding Some Common Gamma Ray Radioactive Sources

The role La₂O₃ on the radiation shielding properties of La₂O₃-CaO-B₂O₃-SiO₂ glass systems was investigated. The energies were selected between 0.284 and 1.275 MeV and Phy-X software was used for the calculations. BLa10 glass had the least linear attenuation coefficient (LAC) at all the tested energies, while BLa30 had the greatest, which indicated that increasing the content of La₂O₃ in the BLa-X glasses enhances the shielding performance of these glasses. The mass attenuation coefficient (MAC) of BLa15 decreases from 0.150 cm²/g to 0.054 cm²/g at energies of 0.284 MeV and 1.275 MeV, respectively, while the MAC of BLa25 decreases from 0.164 cm²/g to 0.053 cm²/g for the same energies, respectively. At all energies, the effective atomic number (Z_eff) values follow the trend BLa10 < BLa15 < BLa20 < BLa25 < BLa30. The half value thickness (HVL) of the BLa-X glass shields were also investigated. The minimum HVL values are found at 0.284 MeV. The HVL results demonstrated that BLa30 is the most space-efficient shield. The tenth value layer (TVL) results demonstrated that the glasses are more effective attenuators at lower energies, while decreasing in ability at greater energies. These mean free path results proved that increasing the density of the glasses, by increasing the amount of La₂O₃ content, lowers MFP, and increases attenuation, which means that BLa30, the glass with the greatest density, absorbs the most amount of radiation.     

Al2O3-Coated Si-Alloy Prepared by Atomic Layer Deposition as Anodes for Lithium-Ion Batteries

Silicon-based anodes can increase the energy density of Li-ion batteries (LIBs) owing to their large weights and volumetric capacities. However, repeated charging and discharging can rapidly deteriorate the electrochemical properties because of a large volume change in the electrode. In this study, a commercial Fe-Si powder was coated with Al₂O₃ layers of different thicknesses via atomic layer deposition (ALD) to prevent the volume expansion of Si and suppress the formation of crack-induced solid electrolyte interfaces. The Al₂O₃ content was controlled by adjusting the trimethyl aluminum exposure time, and higher Al₂O₃ contents significantly improved the electrochemical properties. In 300 cycles, the capacity retention rate of a pouch full-cell containing the fabricated anodes increased from 69.8% to 72.3% and 79.1% depending on the Al₂O₃ content. The powder characterization and coin and pouch cell cycle evaluation results confirmed the formation of an Al₂O₃ layer on the powder surface. Furthermore, the expansion rate observed during the charging/discharging of the pouch cell indicated that the deposited layer suppressed the powder expansion and improved the cell stability. Thus, the performance of an LIB containing Si-alloy anodes can be improved by coating an ALD-synthesized protective Al₂O₃ layer.     

Assessment of the Synergetic Performance of Nanostructured CeO2-SnO2/Al2O3 Mixed Oxides on Automobile Exhaust Control

In order to control diesel exhaust emission, CeO₂-SnO₂/Al₂O₃ (CTA) mixed oxides were prepared and coated on perforated stainless steel (SS) filter plates, and the catalytic activities were analyzed in this work. The CeO₂-SnO₂ (different compositions of Ce/Sn—2:8; 1:1; 8:2) composites and Al₂O₃ were prepared separately via a co-precipitation approach, and CeO₂-SnO₂/Al₂O₃ (CTA) mixed oxides were attained by mechanical mixing of 75 wt% CeO₂-SnO₂ composites with 25 wt% Al₂O₃. X-ray diffraction (XRD) and Raman spectroscopy were performed for all three CeO₂-SnO₂/Al₂O₃ (CTA) mixed oxides; the CeO₂-SnO₂/Al₂O₃ (Ce/Sn-1:1) sample confirmed the presence of cubic and tetragonal mixed faces, which enhances the redox nature (catalytic activities). Various characterizations such as high-resolution transmission electron microscopy (HRTEM), Brunauer–Emmett–Teller (BET) analysis, X-ray photoelectron spectroscopy (XPS), and a scanning electron microscope (SEM) were employed on CeO₂-SnO₂/Al₂O₃ (Ce/Sn-1:1) sample to investigate the structural, textural, compositional, and morphological properties. The CeO₂-SnO₂/Al₂O₃ (Ce/Sn-1:1) sample was coated on a perforated stainless steel (SS) filter plate via a simple, cost-effective, and novel method, and an exhaust emission test for various compression ratios (CR), injection pressure (IP), and load (L) was completed using an AVL Digas analyzer. The CeO₂-SnO₂/Al₂O₃ (Ce/Sn-1:1) sample, with a size of 10.22 nm and a high surface area of about 73 m² g⁻¹, exhibit appreciable catalytic properties.     

Novel HMO-Glasses with Sb2O3 and TeO2 for Nuclear Radiation Shielding Purposes: A Comparative Analysis with Traditional and Novel Shields

The radiation shielding characteristics of samples from two TeO₂ and Sb₂O₃-based basic glass groups were investigated in this research. TeO₂ and Sb₂O₃-based glasses were determined in the research as six samples with a composition of 10WO₃-(x)MoO₃-(90 − x)(TeO₂/Sb₂O₃) (x = 10, 20, 30). A general purpose MCNPX Monte Carlo code and Phy-X/PSD platform were used to estimate the radiation shielding characteristics. Accordingly, the linear and mass attenuation coefficients, half value layer, mean free path, variation of the effective atomic number with photon energy, exposure and built-up energy factors, and effective removal cross-section values were determined. It was determined that the results that were produced using the two different techniques were consistent. Based on the collected data, the most remarkable findings were found to be associated with the sample classified as T80 (10WO₃ + 10MoO₃ + 80TeO₂). The current study showed that material density was as equally important as composition in modifying radiation shielding characteristics. With the T80 sample with the greatest density (5.61 g/cm³) achieving the best results. Additionally, the acquired findings were compared to the radiation shielding characteristics of various glass and concrete materials. Increasing the quantity of MoO₃ additive, a known heavy metal oxide, in these TeO₂ and Sb₂O₃-based glasses may have a detrimental impact on the change in radiation shielding characteristics.     

Study on the Penetration Power of ZrO2 Toughened Al2O3 Ceramic Composite Projectile into Ceramic Composite Armor

This work aims to improve the penetration ability of a 14.5 mm standard armor-piercing projectile into ceramic/armor steel (Al₂O₃/RHA) composite armor. To this end, ZrO₂ toughened Al₂O₃(ZTA) is prepared as the material for bullet tips, utilizing in situ solidification injection molding that is realized via ceramic dispersant hydrolytic degradation. The penetration power of ZTA ceramic composite projectile, compared with standard armor, against 15 mm armor steel (RHA) and 30 mm Al₂O₃/RHA composite armor, is studied by ballistics testing combined with numerical simulation. The Tate theory is optimized and then employed to calculate the penetration depth and bullet core’s residual mass when ZTA ceramic composite projectile penetrates into Al₂O₃/RHA composite armor. The results show that when penetrating RHA of 15 mm, the penetration area of ZTA ceramic composite projectile into RHA increases by 27.59% and the exit area by 42.93%. While the standard projectile fails to penetrate the 30 mm Al₂O₃/RHA composite armor, the ZTA ceramic composite armor-piercing projectile succeeds, with the mass loss reduced by 66.67% over the standard one. The ZTA ceramic composite bullet has a better performance than the standard bullet in penetrating RHA and Al₂O₃/RHA composite armors. The test results, simulation, and theoretical analysis are consistent. This study has practical values for engineering applications to design new ceramic composite bullets.     

Study on Structure and Properties of La2O3-Doped Basaltic Glasses for Immobilizing Simulated Lanthanides

The La₂O₃-doped basaltic glass simulated high-level waste form (HLW) was prepared by the solid-state melt method. The simulated waste La₂O₃ maximum loading and the doping effect on structure, thermal stability, leaching behavior, density, and hardness of basaltic glasses were studied. XRD and SEM results show that the simulated waste loading of La₂O₃ in basaltic glass can be up to ~46 wt.%, and apatite (CaLa₄(SiO₄)₃O) precipitates when the content of La₂O₃ reaches 56 wt.%. Raman results indicate that the addition of La₂O₃ breaks the Si–O–Si bond of large-membered and four-membered, but the number of A1³⁺ involved in the formation of the network increase. Low content of La₂O₃ can help to repair the glass network, but it destroys the network as above 26 wt.%. DSC results show the thermal stability of simulated waste forms first increases and then decreases with the increase of La₂O₃ content. With the increase of La₂O₃ content, the density of the simulated waste form increases, and the hardness decreases. The leaching chemical stability of samples was evaluated by the ASTM Product Consistency Test (PCT) Method, which show that all the samples have good chemical stability. The leaching rates of La and Fe are three orders of magnitude lower than those of the other elements. Among them, L36 has the best comprehensive leaching performance.     

Al2O3/ZrO2 Materials as an Environmentally Friendly Solution for Linear Infrastructure Applications

The present work deals with the evaluation of the effect of ZrO₂ on the structure and selected properties of shapes obtained using the centrifugal slip casting method. The samples were made of alumina and zirconia. The applied technology made it possible to produce tubes with a high density reaching 99–100% after sintering. Very good bonding was obtained at the Al₂O₃/ZrO₂ interphase boundaries with no discernible delamination or cracks, which was confirmed by STEM observations. In the case of Al₂O₃/ZrO₂ composites containing 5 vol.% and 10 vol.% ZrO₂, the presence of equiaxial ZrO₂ grains with an average size of 0.25 µm was observed, which are distributed along the grain boundaries of Al₂O₃. At the same time, the composites exhibited a very high hardness of 22–23 GPa. Moreover, the environmental influences accompanying the sintering process were quantified. The impacts were determined using the life cycle analysis method, in the phase related to the extraction and processing of raw materials and the process of producing Al₂O₃/ZrO₂ composites. The results obtained show that the production of 1 kg of sintered composite results in greenhouse gas emissions of 2.24–2.9 kg CO₂ eq. which is comparable to the amount of emissions accompanying the production of 1 kg of Polyvinyl Chloride (PVC), Polypropylene (PP), or hot-rolled steel products.     

Red Y2O3:Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applications

Y₂O_3:Eu is a promising red-emitting phosphor owing to its high luminance efficiency, chemical stability, and non-toxicity. Although Y₂O₃:Eu thin films can be prepared by various deposition methods, most of them require high processing temperatures in order to obtain a crystalline structure. In this work, we report on the fabrication of red Y₂O₃:Eu thin film phosphors and multilayer structure Y₂O₃:Eu-based electroluminescent devices by atomic layer deposition at 300 °C. The structural and optical properties of the phosphor films were investigated using X-ray diffraction and photoluminescence measurements, respectively, whereas the performance of the fabricated device was evaluated using electroluminescence measurements. X-ray diffraction measurements show a polycrystalline structure of the films whereas photoluminescence shows emission above 570 nm. Red electroluminescent devices with a luminance up to 40 cd/m² at a driving frequency of 1 kHz and an efficiency of 0.28 Lm/W were achieved.     

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

In this article, we reported on a Ga₂O₃-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga₂O₃ drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied. Then nickel Schottky barrier diode and p-NiO/n-Ga₂O₃ heterojunction diode were fabricated and measured. Without any electric field management structure, the Schottky barrier diode and heterojunction diode have specific resistances of 3.0 mΩ·cm² and 6.2 mΩ·cm², breakdown voltages of 380 V and 740 V, thus yielding power figures of merit of 48 MW·cm⁻² and 88 MW·cm⁻², respectively. Besides, both devices exhibit a current on/off ratio of more than 10¹⁰. This shows the prospect of MOCVD in power device manufacture.     

Drastic Dependence of the pH Sensitivity of Fe2O3-Bi2O3-B2O3 Hydrophobic Glasses with Composition

Fe₂O₃-Bi₂O₃-B₂O₃ (FeBiB) glasses were developed as novel pH responsive hydrophobic glasses. The influence of the glass composition on the pH sensitivity of FeBiB glasses was investigated. The pH sensitivity drastically decreased with decreasing B₂O₃ content. A moderate amount of Fe₂O₃ and a small amount of B₂O₃ respectively produces bulk electronic conduction and a pH response on glass surfaces. Because the remaining components of the glass can be selected freely, this discovery could prove very useful in developing novel pH glass electrodes that are self-cleaning and resist fouling.     

First-Principles Calculation of the Bonding Strength of the Al2O3-Fe Interface Enhanced by Amorphous Na2SiO3

In this paper, the interfacial adhesion work (W_ad), tensile strength, and electronic states of the Fe-amorphous Na₂SiO₃-Al₂O₃ and Fe-Al₂O₃ interfaces are well-investigated, utilizing the first-principles calculations. The results indicate that the Fe-amorphous Na₂SiO₃-Al₂O₃ interface is more stable and wettable than the interface of Fe-Al₂O₃. Specifically, the interfacial adhesion work of the Fe-amorphous Na₂SiO₃ interface is 434.89 J/m², which is about forty times that of the Fe-Al₂O₃ interface, implying that the addition of amorphous Na₂SiO₃ promotes the dispersion of Al₂O₃ particle-reinforced. As anticipated, the tensile stress of the Fe-amorphous Na₂SiO₃-Al₂O₃ interface is about 46.58 GPa over the entire critical strain range, which is significantly greater than the Fe-Al₂O₃ interface control group. It could be inferred that the wear resistance of Al₂O₃ particle-reinforced is improved by adding amorphous Na₂SiO₃. To explain the electronic origin of this excellent performance, the charge density and density of states are investigated and the results indicate that the O atom in amorphous Na₂SiO₃ has a bonding action with Fe and Al; the amorphous Na₂SiO₃ acts as a sustained release. This study provides new ideas for particle-reinforced composites.     

Synergistic Effects of Pr6O11 and Co3O4 on Electrical and Microstructure Features of ZnO-BaTiO3 Varistor Ceramics

This paper investigated the effects of Pr₆O₁₁ and Co₃O₄ on the electrical properties of ZnO-BaTiO₃ varistor ceramics. The Pr₆O₁₁ doping has a notable influence on the characteristics of the nonlinear coefficient, varistor voltage, and leakage current where the values varied from 2.29 to 2.69, 12.36 to 68.36 V/mm and 599.33 to 548.16 µA/cm², respectively. The nonlinear varistor coefficient of 5.50 to 7.15 and the varistor voltage of 7.38 to 8.10 V/mm was also influenced by the use of Co₃O₄ as a dopant. When the amount of Co₃O₄ was above 0.5 wt.%, the leakage current increased from 202.41 to 302.71 μA/cm². The varistor ceramics with 1.5 wt.% Pr₆O₁₁ shows good nonlinear electrical performance at higher breakdown voltage and reduced the leakage current of the ceramic materials. Besides, the varistor sample that was doped with 0.5 wt.% Co₃O₄ was able to enhance the nonlinear electrical properties at low breakdown voltage with a smaller value of leakage current.