Response corrections for solid-state detectors in megavoltage photon dosimetry

Solid-state detectors offer high sensitivity, stability and resolution and are frequently the dosimeter of choice for on-line dosimetry and small field therapies such as stereotactic radiosurgery. The departure from tissue equivalence of many solid-state devices, including diodes and MOSFETs, has to be carefully considered at lower energies and for Compton scattered radiation where the strongly Z-dependent photoelectric effect is significant. A modification of Burlin cavity theory is proposed that treats primary and scatter photon spectra separately and this has been applied to determine the correction factors for diode detector measurements of 6 and 15 MV linear accelerator beams. Uncorrected, an unshielded diode overestimates the dose at depth by as much as 15% for the 6 MV beam. The model predicts the effect to within 1% for both energies offering a basis for the correction of diodes for use in routine dosimetry.     

Effect of scatter material on diode detector performance for in vivo dosimetry

The accuracy of Scanditronix EDE, EDP10 and EDP20 diodes for entrance dosimetry of complex fields has been assessed using static and dynamic multileaf collimator test fields on phantoms. Specifically, surrounding scatter material size and composition have been investigated. The EDP10 and EDP20 diodes incorporate steel build-up caps. The effect of varying the diameter of the wax scatter discs on the dosimeter response showed a systematic detector under-response for the smaller discs with errors up to 4.1% relative to full scatter conditions. In static fields, all diodes over-respond at a field size of 1 x 1 cm(2). Diodes with non-water-equivalent build-up material exhibit over-response of up to 10.8%. In dynamic fields, diodes over-respond when there is an increased contribution from phantom scatter and under-respond in shielded regions due to low dose rate and beam hardening. For high dose regions, all diodes over-respond with the greatest over-response of 3.8% observed with a 6 mm sliding window field. The EDE diode with a 6 cm scatter disc correlated best with the reference dosimeter. A diode design with minimal non-water-equivalent components and the addition of a 6 cm diameter water-equivalent disc for scatter material is recommended for the in vivo dosimetry of 6 MV complex fields.     

In vivo dosimetry: intercomparison between p-type based and n-type based diodes for the 16-25 MV energy range

This paper compares two different types of diodes designed to cover the energy range from 16 to 25 MV, one n-type (diode-A) and the other p-type (diode-B). A 18 MV x-ray beam has been used for all tests. Signal stability postirradiation, intrinsic precision and linearity of response with dose, front-back symmetry, and dose decrease under the diode were studied. Also, the water equivalent thickness of the build up caps was determined. Both types of diodes were calibrated to give entrance dose. Entrance correction factors for field size, tray, source skin distance, angle, and wedge were determined. Finally, the effect of dose rate, temperature and accumulated dose on the diode's response were studied. Only diode-A had full build-up for 18 MV x rays and standard irradiation conditions. Field size correction factor was about 2%-4% for field sizes bigger than 20 x 20 cm2 for both diodes. Tray correction factor was negligible for diode-A while diode-B would overestimate the dose by a 2% for a 40 x 40 cm2 field size if the correction factor was not applied. Wedge correction factors are only relevant for the 60 degrees wedge, being the correction factor for diode-A significantly higher than for diode-B. Diode-A showed less temperature dependence than diode-B. Sensitivity dependence on dose per pulse was a 1.5% higher for diode-A than for diode-B and therefore a higher SSD dependence was found for diode-A. The loss of sensitivity with accumulated radiation dose was only about 0.3% for diode-A, after 300 Gy, while it amounted to 8% for diode-B. Weighing the different correction factors for both types of diodes no conclusions about which type is better can be driven. From these results it can be also seen that the dependence of the diode response on dose rate in a pulsed beam does not seem to be associated with the fact of being n-type or p-type but could be related to the doping level of the diodes.     

Energy dependence of commercially available diode detectors for in-vivo dosimetry

The energy dependence of commercially available diode detectors was measured for nominal accelerating potential ranging between Co-60 and 17 MV. The measurements were performed in a liquid water phantom at 5 cm depth for 10 x 10 cm2 collimator setting and source-to-detector distance of 100 cm. The response (nC/Gy) was normalized to Co-60 beam after corrections for the dose rate and temperature dependences for each diode. The energy dependence, calculated by taking the percent difference between the maximum and minimum sensitivity normalized to Co-60 beam, varied by 39% for the n-type Isorad Red, 26% for the n-type Isorad Electron, 19% for the QED Red (p-type), 15% for the QED Electron (p-type), 11% for the QED Blue (p-type), and 6% for the EDP10 diode for nominal accelerating potential between Co-60 and 17 MV. It varied by 34% for the Isorad-3 Gold #1 and #2, 35% for the Veridose Green, 15% for the Veridose Yellow, 9% for the Veridose Electron, 21% for the n-type QED Gold, 24% for the n-type QED Red, 3% for the EDP23G, 2% for the PFD (photon field detector), 7% for the EDP103G, and 16% for the EDP203G for nominal accelerating potential between Co-60 and 15 MV. The magnitude of the energy dependence is verified by Monte Carlo simulation. We concluded that the energy dependence does not depend on whether the diode is n- or p-type but rather depends mainly on the material around the die such as the buildup and the geometry of the buildup material. As a result, the value of the energy dependence can vary for each individual diode depending on the actual geometry and should be used with caution.     

Comparison study of MOSFET detectors and diodes for entrance in vivo dosimetry in 18 MV x-ray beams

The feasibility of dual bias dual metal oxide semiconductor field effect transistors (MOSFETs) for entrance in vivo dose measurements in high energy x-rays beams (18 MV) was investigated. A comparison with commercially available diodes for in vivo dosimetry for the same energy range was performed. As MOSFETs are sold without an integrated build-up cap, different caps were tested: 3 cm bolus, 2 cm bolus, 2 cm hemispherical cap of a water equivalent material (Plastic Water) and a metallic hemispherical cap. This metallic build-up cap is the same as the one that is mounted on the in vivo diode used in this study. Intrinsic precision and response linearity with dose were determined for MOSFETs and diodes. They were then calibrated for entrance in vivo dosimetry in an 18 MV x-ray beam. Calibration included determination of the calibration factor in standard reference conditions and of the correction factors (CF) when irradiation conditions differed from those of reference. Correction factors for field size, source surface distance, wedge, and temperature were determined. Sensitivity variation with accumulated dose and the lifetime of both types of detectors were also studied. Finally, the uncertainties of entrance in vivo measurements using MOSFET and diodes were discussed. Intrinsic precision for MOSFETs for the high sensitivity mode was 0.7% (1 s.d.) as compared to the 0.05% (1 s.d.) for the studied diodes. The linearity of the response with dose was excellent (R2 = 1.000) for both in vivo dosimetry systems. The absolute values of the studied correction factors for the MOSFETs when covered by the different build-up caps were of the same order of those determined for the diodes. However, the uncertainties of the correction factors for MOSFETs were significantly higher than for diodes. Although the intrinsic precision and the uncertainty on the CF was higher for MOSFET detectors than for the studied diodes, the total uncertainty in entrance dose determination, once they were calibrated, was of 2.9% (1 s.d.) while for diodes it was 2.0% (1 s.d.). MOSFETs showed no sensitivity variation with accumulated dose or temperature. When used in the high sensitivity mode, after approximately 50 Gy of accumulated dose MOSFETs could no longer be used as radiation dosimeters. In conclusion, MOSFETs can be used for entrance in vivo dosimetry in high energy x-rays beams if covered by an appropriate build-up cap. Metallic build-up caps, such as those used for in vivo diodes, have the advantage of greater patient comfort and less perturbation of the treatment field than the other build-up caps tested, while keeping the correction factors of the same order.     

Patient dose measurements in photon fields by means of silicon semiconductor detectors

Semiconductor detectors based on p-type silicon and designed for in vivo measurement of entrance dose at the reference point from photon radiation fields, are described. To estimate the absorbed dose at the reference point from measurements with a thin detector, field-size dependent correction factors must be applied to the reading, as the shape of the dose buildup curve varies with field size. To decrease or avoid field-size dependent correction factors, the detector can be covered with a buildup cap. The presence of such a detector will cause perturbation of the radiation field. Therefore, the design of a detector, irrespective of its type, intended for patient dosimetry involves a compromise between minimizing the radiation field perturbation and minimizing field-size dependent correction factors. Detectors with three different buildup caps were designed to cover the energy range from cobalt-60 to 16-MV x rays. The three different detector types were investigated with respect to their signal dependence on field size, field perturbation, and directional dependence. A summary of radiation damage effects on sensitivity, and of sensitivity variation with temperature is also presented.     

Comparison of entrance and exit dose measurements using ionization chambers and silicon diodes

A high precision patient dosimetry method has been developed, based on the use of p-type diodes. First, entrance as well as exit dose calibration factors have to be determined under reference irradiation conditions. Secondly, a set of correction factors must be added for situations deviating from the reference conditions, i.e. for different source-skin distances, phantom (patient) thicknesses, field sizes or for insertion of a wedge into the photon beam. Finally some other detector characteristics such as the temperature dependence of the response have to be taken into account. For most irradiation conditions this procedure is sufficiently accurate to allow entrance as well as exist dose determinations with a diode to be in good agreement with dose values measured by an ionization chamber. The main factors effecting the value of the correction factors, the dependence of the diode sensitivity on the energy and the dose per pulse, have been investigated to explain some of the observed phenomena. Despite a strong energy dependence of the sensitivity, the correction factors are, for a particular type of diode, the same for 4 and 8 MV x-ray beams. The variation in the values for the correction factors with integrated dose received by the diode is small. These findings indicate that the correction factors, once available, can be applied under a number of circumstances. Due to the difference in behaviour of various diodes, even from the same batch, it is, however, necessary to determine the characteristics for each diode individually.     

Accurate skin dose measurements using radiochromic film in clinical applications

Megavoltage x-ray beams exhibit the well-known phenomena of dose buildup within the first few millimeters of the incident phantom surface, or the skin. Results of the surface dose measurements, however, depend vastly on the measurement technique employed. Our goal in this study was to determine a correction procedure in order to obtain an accurate skin dose estimate at the clinically relevant depth based on radiochromic film measurements. To illustrate this correction, we have used as a reference point a depth of 70 micron. We used the new GAFCHROMIC dosimetry films (HS, XR-T, and EBT) that have effective points of measurement at depths slightly larger than 70 micron. In addition to films, we also used an Attix parallel-plate chamber and a home-built extrapolation chamber to cover tissue-equivalent depths in the range from 4 micron to 1 mm of water-equivalent depth. Our measurements suggest that within the first millimeter of the skin region, the PDD for a 6 MV photon beam and field size of 10 x 10 cm2 increases from 14% to 43%. For the three GAFCHROMIC dosimetry film models, the 6 MV beam entrance skin dose measurement corrections due to their effective point of measurement are as follows: 15% for the EBT, 15% for the HS, and 16% for the XR-T model GAFCHROMIC films. The correction factors for the exit skin dose due to the build-down region are negligible. There is a small field size dependence for the entrance skin dose correction factor when using the EBT GAFCHROMIC film model. Finally, a procedure that uses EBT model GAFCHROMIC film for an accurate measurement of the skin dose in a parallel-opposed pair 6 MV photon beam arrangement is described.     

Comparison of p-type commercial electron diodes for in vivo dosimetry

This paper compares the characteristics of three types of commercial p-type electron diodes specially designed for in vivo dosimetry (Scanditronix EDD2, Sun Nuclear QED 111200-0 and PTW T60010E diodes coupled with a Therados DPD510 dosimeter) in electron fields with energies from 4.5 to 21 MeV, and in conditions similar to those encountered in radiotherapy. In addition to the diodes, a NACP plane parallel ionization chamber and film dosimeters have been used in the experiments. The influence of beam direction on the diode responses (directional effect) was investigated. It was found to be the greatest for the lowest electron beam energy. At 12 MeV and an incidence of +/- 30 degrees, the variation was found to be less than 1% for the Scanditronix and Sun Nuclear diodes and less than 3% for the PTW one. The three diodes exhibited a variation in sensitivity with dose-per-pulse of less than 1% over the range 0.18-0.43 mGy/pulse. The temperature dependence was also studied. The response was linear for the three diodes between 22.2 and 40 degrees C and the sensitivity variations with temperature were (0.25+/-0.01)%/degree C, (0.28+/-0.01)%/degree C, and (0.02 +/-0.01)%/degree C for Scanditronix, Sun Nuclear, and PTW diodes, respectively. Finally the perturbation to the irradiation field induced by the presence of diodes placed at the surface of a homogeneous phantom was investigated and found to be significant, both at the surface and at the depth of maximum dose (several tens of percent) for all three diode types. There is an increase of dose right underneath the diode (close to the surface) and a dose shadow at the depth of maximum. The study shows that electron diodes can be used for in vivo dosimetry provided their characteristics are carefully established before use and taken into consideration at the time of interpretation of the results.     

Monte Carlo study of si diode response in electron beams

Silicon semiconductor diodes measure almost the same depth-dose distributions in both photon and electron beams as those measured by ion chambers. A recent study in ion chamber dosimetry has suggested that the wall correction factor for a parallel-plate ion chamber in electron beams changes with depth by as much as 6%. To investigate diode detector response with respect to depth, a silicon diode model is constructed and the water/silicon dose ratio at various depths in electron beams is calculated using EGSnrc. The results indicate that, for this particular diode model, the diode response per unit water dose (or water/diode dose ratio) in both 6 and 18 MeV electron beams is flat within 2% versus depth, from near the phantom surface to the depth of R50 (with calculation uncertainty <0.3%). This suggests that there must be some other correction factors for ion chambers that counter-balance the large wall correction factor at depth in electron beams. In addition, the beam quality and field-size dependence of the diode model are also calculated. The results show that the water/diode dose ratio remains constant within 2% over the electron energy range from 6 to 18 MeV. The water/diode dose ratio does not depend on field size as long as the incident electron beam is broad and the electron energy is high. However, for a very small beam size (1 X 1 cm(2)) and low electron energy (6 MeV), the water/diode dose ratio may decrease by more than 2% compared to that of a broad beam.     

Temperature dependence of commercially available diode detectors

Temperature dependence of commercially available n- and p-type diodes were studied experimentally under both high instantaneous dose rate (pulsed) and low dose rate (continuous) radiation. The sensitivity versus temperature was measured at SSD = 80 or 100 cm, 10 x 10 cm2, and 5 cm depth in a 30 x 30 x 30 cm3 water phantom between 10 degrees C and 35 degrees C. The response was linear for all the diode detectors. The temperature coefficient (or sensitivity variation with temperature, svwt) was dose rate independent for preirradiated diodes. They were (0.30 +/- 0.01)%/degrees C, (0.36 +/- 0.03)%/degrees C, and (0.29 +/- 0.08)%/degrees C for QED p-type, EDP p-type, and Isorad n-type diodes, respectively. The temperature coefficient for unirradiated n-type diodes was different under low dose rate [(0.16 to 0.45)%/degrees C, continuous, cobalt] and high instantaneous dose rate [(0.07 +/- 0.02)%/degrees C, pulsed radiation]. Moreover, the temperature coefficient varies among individual diodes. Similarly, the temperature coefficient for a special unirradiated QED p-type diode was different under low dose rate (0.34%/degrees C, cobalt) and high instantaneous dose rate [(0.26 +/- 0.01)%/degrees C, pulsed radiation]. Sufficient preirradiation can eliminate dose rate dependence of the temperature coefficient. On the contrary, preirradiation cannot eliminate dose rate dependence of the diode sensitivity itself.     

Dose rate and SDD dependence of commercially available diode detectors

The dose-rate dependence of commercially available diode detectors was measured under both high instantaneous dose-rate (pulsed) and low dose rate (continuous, Co-60) radiation. The dose-rate dependence was measured in an acrylic miniphantom at a 5-cm depth in a 10 x 10 cm2 collimator setting, by varying source-to-detector distance (SDD) between at least 80 and 200 cm. The ratio of a normalized diode reading to a normalized ion chamber reading (both at SDD=100 cm) was used to determine diode sensitivity ratio for pulsed and continuous radiation at different SDD. The inverse of the diode sensitivity ratio is defined as the SDD correction factor (SDD CF). The diode sensitivity ratio increased with increasing instantaneous dose rate (or decreasing SDD). The ratio of diode sensitivity, normalized to 4000 cGy/s, varied between 0.988 (1490 cGy/s)-1.023 (38,900 cGy/s) for unirradiated n-type Isorad Gold, 0.981 (1460 cGy/s)-1.026 (39,060 cGy/s) for unirradiated QED Red (n type), 0.972 (1490 cGy/s)-1.068 (38,900 cGy/s) for preirradiated Isorad Red (n type), 0.985 (1490 cGy/s)-1.012 (38,990 cGy/s) for n-type Pt-doped Isorad-3 Gold, 0.995 (1450 cGy/s)-1.020 (21,870 cGy/s) for n-type Veridose Green, 0.978 (1450 cGy/s)-1.066 (21,870 cGy/s) for preirradiated Isorad-p Red, 0.994 (1540 cGy/s)-1.028 (17,870 cGy/s) for p-type preirradiated QED, 0.998 (1450 cGy/s)-1.003 (21,870 cGy/s) for the p-type preirradiated Scanditronix EDP20(3G), and 0.998 (1490 cGy/s)-1.015 (38,880 cGy/s) for Scanditronix EDP10(3G) diodes. The p-type diodes do not always show less dose-rate dependence than the n-type diodes. Preirradiation does not always reduce diode dose-rate dependence. A comparison between the SDD dependence measured at the surface of a full scatter phantom and that in a miniphantom was made. Using a direct adjustment of radiation pulse height, we concluded that the SDD dependence of diode sensitivity can be explained by the instantaneous dose-rate dependence if sufficient buildup is provided to eliminate electron contamination. An energy independent empirical formula was proposed to fit the dose-rate dependence of diode sensitivity.     

Dose corrections for field obliquity for 45-MV x-ray therapy

The degree of dose perturbation produced by a 25.7-cm-diam circular water phantom was determined for a 45-MV x-ray beam by direct measurement. Data obtained in a circular and a cubical water phantom was utilized to test three accepted techniques (isodose shift, TAR method, and effective SSD method) for the correction of isodose levels to account for patient curvature. In general, the effective SSD method yielded the most accurate results for all depth including the buildup region. An isodose shift factor of 0.8 was found for the 45-MV x-ray beam.     

Monte Carlo simulated correction factors for machine specific reference field dose calibration and output factor measurement using fixed and iris collimators on the CyberKnife system

Monte Carlo (MC) simulation of dose to water and dose to detector has been used to calculate the correction factors needed for dose calibration and output factor measurements on the CyberKnife system. Reference field ionization chambers simulated were the PTW 30006, Exradin A12, and NE 2571 Farmer chambers, and small volume chambers PTW 31014 and 31010. Correction factors for Farmer chambers were found to be 0.7%-0.9% larger than those determined from TRS-398 due mainly to the dose gradient across the chamber cavity. For one microchamber where comparison was possible, the factor was 0.5% lower than TRS-398 which is consistent with previous MC simulations of flattening filter free Linacs. Output factor detectors simulated were diode models PTW 60008, 60012, 60017, 60018, Sun Nuclear edge detector, air-filled microchambers Exradin A16 and PTW 31014, and liquid-filled microchamber PTW 31018 microLion. Factors were generated for both fixed and iris collimators. The resulting correction factors differ from unity by up to?+11% for air-filled microchambers and?-6% for diodes at the smallest field size (5 mm), and tend towards unity with increasing field size (correction factor magnitude <1% for all detectors at field sizes >15 mm). Output factor measurements performed using these detectors with fixed and iris collimators on two different CyberKnife systems showed initial differences between detectors of >15% at 5 mm field size. After correction the measurements on each unit agreed within ～1.5% at the smallest field size. This paper provides a complete set of correction factors needed to apply a new small field dosimetry formalism to both collimator types on the CyberKnife system using a range of commonly used detectors.     

Using a Monte Carlo model to predict dosimetric properties of small radiotherapy photon fields

Accurate characterization of small-field dosimetry requires measurements to be made with precisely aligned specialized detectors and is thus time consuming and error prone. This work explores measurement differences between detectors by using a Monte Carlo model matched to large-field data to predict properties of smaller fields. Measurements made with a variety of detectors have been compared with calculated results to assess their validity and explore reasons for differences. Unshielded diodes are expected to produce some of the most useful data, as their small sensitive cross sections give good resolution whilst their energy dependence is shown to vary little with depth in a 15 MV linac beam. Their response is shown to be constant with field size over the range 1-10 cm, with a correction of 3% needed for a field size of 0.5 cm. BEAMnrc has been used to create a 15 MV beam model, matched to dosimetric data for square fields larger than 3 cm, and producing small-field profiles and percentage depth doses (PDDs) that agree well with unshielded diode data for field sizes down to 0.5 cm. For fields sizes of 1.5 cm and above, little detector-to-detector variation exists in measured output factors, however for a 0.5 cm field a relative spread of 18% is seen between output factors measured with different detectors-values measured with the diamond and pinpoint detectors lying below that of the unshielded diode, with the shielded diode value being higher. Relative to the corrected unshielded diode measurement, the Monte Carlo modeled output factor is 4.5% low, a discrepancy that is probably due to the focal spot fluence profile and source occlusion modeling. The large-field Monte Carlo model can, therefore, currently be used to predict small-field profiles and PDDs measured with an unshielded diode. However, determination of output factors for the smallest fields requires a more detailed model of focal spot fluence and source occlusion.     

Comparative dosimetry in narrow high-energy photon beams

A comparison of the response of different dosimeters in narrow photon beams (phi > or = 4 mm) of 6 and 18 MV bremsstrahlung has been performed. The detectors used were a natural diamond detector, a liquid ionization chamber, a plastic scintillator and two dedicated silicon diodes. The diodes had a very small detection volume and one was a specially designed double diode using two parallel opposed active volumes with compensating interface perturbations. The characteristics of the detectors were investigated both for dose distribution measurements, such as depth-dose curves and lateral beam profiles, and for output factors. The dose rate and angular dependence of the diamond and the two diodes were also studied separately. The depth-dose distributions for small fields agree well for the diamond, the scintillator and the single diode, while the measured dose maximum for the double diode is about 1% higher and for the liquid chamber about 1% lower than the mean of the others when normalized at a depth of 10 cm. The plastic scintillator and the liquid ionization chamber detect a penumbra width that is slightly broadened due to the influence of their finite size, while the double diode may even underestimate the penumbra width due to its small size and high density. When corrected for the extension of the detector volume a good agreement with Monte Carlo calculated beam profiles was obtained for the plastic scintillator and the liquid ionization chamber. Profiles measured with the diamond show an asymmetry when positioned with the smallest dimension facing the beam, while the double diode, the scintillator and the liquid chamber measure symmetric profiles irrespective of positioning. Significant differences in the output factors were obtained with the different detectors. The natural diamond detector measures output factors close to those with an ionization chamber (less than 1% difference) for field sizes between 3 x 3 and 15 x 15 cm2, but overestimates the output factors for large fields and underestimates the output factors for the smallest field sizes. The single and double diodes overestimated the output factor for large field sizes by up to 7 and 12% respectively due to the high content of low-energy photons. The double diode, and to some extent the single diode, also showed a relative increase in response compared with the more water equivalent liquid chamber and plastic scintillator at the smallest fields where there is a lack of lateral electron equilibrium. Both the plastic scintillator and the liquid chamber also show responses that deviate from the ionization chamber for larger field sizes. The major deviations can be explained based on the characteristics of the sensitive materials and the construction of the detectors.     

Implementation of an in vivo diode dosimetry program and changes in diode characteristics over a 4-year clinical history

An in vivo dosimetry system that used n-type semiconductor diodes with integral build-up caps was introduced into the clinic. Measurements were made on the entrance surface of the patient and were compared to calculated diode readings expected from monitor units delivered by each beam. A method is given for calibration and correction for changes in diode sensitivity, dose-per-pulse effects, collimated field-size (head-scatter factor), wedges, compensators, and scatter from blocks and block trays. Clinically relevant temperature corrections are determined based on temperature measurements made with the diode used as a thermistor. Changes in diode characteristics over 4 years of clinical use are presented. With proper correction for clinical variables it is shown that difference between calculated and measured diode readings are within +/- 1% for phantom measurements and within +/- 3% for clinical measurements at a 95% confidence level. The correlation of dose measurements on the patient surface to dose inside a target volume is discussed.     

Comparison of measured and Monte Carlo calculated dose distributions in inhomogeneous phantoms in clinical electron beams

Calculations of dose distributions in heterogeneous phantoms in clinical electron beams, carried out using the fast voxel Monte Carlo (MC) system XVMC and the conventional MC code EGSnrc, were compared with measurements. Irradiations were performed using the 9 MeV and 15 MeV beams from a Varian Clinac-18 accelerator with a 10 x 10 cm2 applicator and an SSD of 100 cm. Depth doses were measured with thermoluminescent dosimetry techniques (TLD 700) in phantoms consisting of slabs of Solid Water (SW) and bone and slabs of SW and lung tissue-equivalent materials. Lateral profiles in water were measured using an electron diode at different depths behind one and two immersed aluminium rods. The accelerator was modelled using the EGS4/BEAM system and optimized phase-space files were used as input to the EGSnrc and the XVMC calculations. Also, for the XVMC, an experiment-based beam model was used. All measurements were corrected by the EGSnrc-calculated stopping power ratios. Overall, there is excellent agreement between the corrected experimental and the two MC dose distributions. Small remaining discrepancies may be due to the non-equivalence between physical and simulated tissue-equivalent materials and to detector fluence perturbation effect correction factors that were calculated for the 9 MeV beam at selected depths in the heterogeneous phantoms.     

Dose buildup for obliquely incident photon beams

For obliquely incident photon beams, the buildup of dose with depth is markedly different from normally incident beams. However, relatively little data on this topic exists for high-energy photon beams of energy greater than 6 MV. Measurements of dose in the buildup region were made using a plane-parallel ionization chamber in a polystyrene phantom with obliquely incident 6-, 10-, 18-, and 24-MV x-ray beams angled 0 degrees to 84 degrees. Buildup curves at these angles were plotted and from these an obliquity factor, defined as the ratio of ionization charge collected at a point for a particular angle of incidence to that collected at the same point at normal incidence, was determined. For each energy, the obliquity factor as a function of depth, field size, and source-chamber distance was studied. Results indicate that the obliquity factor is highly dependent on the beam energy, angle of incidence, the collimator opening, and the source-skin distance. A mathematical expression has been developed to predict the dose in the buildup region of high-energy photon beams for various angles of beam incidence, field size, and chamber distance.     

Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams

Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield.