Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

In this study, silicon nitride (SiN_x) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiN_x/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiN_x thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiN_x thin films were a working pressure of 800 × 10⁻³ Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH₄ = 20 sccm and NH₃ = 210 sccm, respectively. For the GZO/PI and GZO-SiN_x/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiN_x/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiN_x/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiN_x/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiN_x/PI.     

Stoichiometry Dependence of Physical and Electrochemical Properties of the SnOx Film Anodes Deposited by Pulse DC Magnetron Sputtering

A batch of Sn oxides was fabricated by pulse direct current reactive magnetron sputtering (pDC−RMS) using different Ar/O₂ flow ratios at 0.3 Pa; the influence of stoichiometry on the physical and electrochemical properties of the films was evaluated by the characterization of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray reflection (XRR), X-ray photoelectron spectroscopy (XPS) and more. The results were as follows. First, the film surface transitioned from a particle morphology (roughness of 50.0 nm) to a smooth state (roughness of 3.7 nm) when Ar/O₂ flow ratios changed from 30/0 to 23/7; second, all SnO_x films were in an amorphous state, some samples deposited with low O₂ flow ratios (≤2 sccm) still included metallic Sn grains. Therefore, the stoichiometry of SnO_x calculated by XPS spectra increased linearly from SnO_0.0.08 to SnO_1.71 as the O₂ flow ratios increased, and the oxidation degree was further calibrated by the average valence method and SnO₂ standard material. Finally, the electrochemical performance was confirmed to be improved with the increase in oxidation degree (x) in SnO_x, and the SnO_1.71 film deposited with Ar/O₂ = 23/7 possessed the best cycle performance, reversible capacity of 396.1 mAh/g and a capacity retention ratio of 75.4% after 50 cycles at a constant current density of 44 μA/cm².     

Study of Structural and Optoelectronic Properties of Thin Films Made of a Few Layered WS2 Flakes

We report a surfactant-free exfoliation method of WS₂ flakes combined with a vacuum filtration method to fabricate thin (<50 nm) WS₂ films, that can be transferred on any arbitrary substrate. Films are composed of thin (<4 nm) single flakes, forming a large size uniform film, verified by AFM and SEM. Using statistical phonons investigation, we demonstrate structural quality and uniformity of the film sample and we provide first-order temperature coefficient χ, which shows linear dependence over 300–450 K temperature range. Electrical measurements show film sheet resistance R_S = 48 MΩ/□ and also reveal two energy band gaps related to the intrinsic architecture of the thin film. Finally, we show that optical transmission/absorption is rich above the bandgap exhibiting several excitonic resonances, and nearly feature-less below the bandgap.     

Bi and Sn Doping Improved the Structural,Optical and Photovoltaic Properties of MAPbI3-Based Perovskite Solar Cells

One of the most amazing photovoltaic technologies for the future is the organic–inorganic lead halide perovskite solar cell, which exhibits excellent power conversion efficiency (PCE) and can be produced using a straightforward solution technique. Toxic lead in perovskite can be replaced by non-toxic alkaline earth metal cations because they keep the charge balance in the material and some of them match the Goldschmidt rule’s tolerance factor. Therefore, thin films of MAPbI₃, 1% Bi and 0%, 0.5%, 1% and 1.5% Sn co-doped MAPbI₃ were deposited on FTO-glass substrates by sol-gel spin-coating technique. XRD confirmed the co-doping of Bi–Sn in MAPbI₃. The 1% Bi and 1% Sn co-doped film had a large grain size. The optical properties were calculated by UV-Vis spectroscopy. The 1% Bi and 1% Sn co-doped film had small E_g, which make it a good material for perovskite solar cells. These films were made into perovskite solar cells. The pure MAPbI₃ film-based solar cell had a current density (J_sc) of 9.71 MA-cm⁻², its open-circuit voltage (V_oc) was 1.18 V, its fill factor (FF) was 0.609 and its efficiency (η) was 6.98%. All of these parameters were improved by the co-doping of Bi–Sn. The cell made from a co-doped MAPbI₃ film with 1% Bi and 1% Sn had a high efficiency (10.03%).     

Drop–Dry Deposition of Ni(OH)2 Precursors for Fabrication of NiO Thin Films

Drop–dry deposition (DDD) is a method of depositing thin films by heating and drying the deposition solution dropped on a substrate. We prepared Ni(OH)₂ precursor thin films by DDD and annealed them in air to prepare NiO thin films. The appropriate deposition conditions were found by changing the number of drop–dry cycles and the concentrations of chemicals in the solution, and the Ni(OH)₂ precursor film with a thickness of 0.3 μm and optical transmittance of more than 95% was successfully deposited. Raman and X-ray diffraction measurements were performed, and it was found that the NiO film was successfully fabricated after annealing at 400 °C. The p-type conductivity of the annealed film was confirmed by photoelectrochemical measurements. In addition, we prepared n-type ZnO by electrochemical deposition on NiO thin films. The current–voltage measurement results show that the ZnO/NiO heterojunction had rectification properties.     

Achievement of Room Temperature Superelasticity in Ti-Mo-Al Alloy System via Manipulation of ω Phase Stability

The achievement of room-temperature (RT) superelasticity in a Ti-Mo-Al ternary alloy system through the addition of a relatively high concentration of Al to manipulate the phase stability of the ω phase is realized in this study. The composition of the Ti-6 mol% Mo (Ti-11.34 mass% Mo) alloy was designated as the starting alloy, while 5 mol% Al (=2.71 mass% Al) and 10 mol% Al (=5.54 mass% Al) were introduced to promote their superelastic behavior. Among the alloys, Ti-6 mol% Mo-10 mol% Al alloy, which was investigated for the very first time in this work, performed the best in terms of superelasticity. On the other hand, Ti-6 mol% Mo and Ti-6 mol% Mo-5 mol% Al alloys exhibited a shape memory effect upon heating. It is worth mentioning that in the transmission electron microscopy observation, ω phase, which appeared along with β-parent phase, was significantly suppressed as Al concentration was elevated up to 10 mol%. Therefore, the conventional difficulties of the inhibited RT superelasticity were successfully revealed by regulating the number density of the ω phase below a threshold.     

High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In₂O₃ and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In₂O₃/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O₂: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O₂ mixture, together with the lowest resistivity of 0.03 Ω·cm.     

High Electrochemical Performance Silicon Thin-Film Free-Standing Electrodes Based on Buckypaper for Flexible Lithium-Ion Batteries

Recently, applications for lithium-ion batteries (LIBs) have expanded to include electric vehicles and electric energy storage systems, extending beyond power sources for portable electronic devices. The power sources of these flexible electronic devices require the creation of thin, light, and flexible power supply devices such as flexile electrolytes/insulators, electrode materials, current collectors, and batteries that play an important role in packaging. Demand will require the progress of modern electrode materials with high capacity, rate capability, cycle stability, electrical conductivity, and mechanical flexibility for the time to come. The integration of high electrical conductivity and flexible buckypaper (oxidized Multi-walled carbon nanotubes (MWCNTs) film) and high theoretical capacity silicon materials are effective for obtaining superior high-energy-density and flexible electrode materials. Therefore, this study focuses on improving the high-capacity, capability-cycling stability of the thin-film Si buckypaper free-standing electrodes for lightweight and flexible energy-supply devices. First, buckypaper (oxidized MWCNTs) was prepared by assembling a free stand-alone electrode, and electrical conductivity tests confirmed that the buckypaper has sufficient electrical conductivity (10⁻⁴(S m⁻¹) in LIBs) to operate simultaneously with a current collector. Subsequently, silicon was deposited on the buckypaper via magnetron sputtering. Next, the thin-film Si buckypaper freestanding electrodes were heat-treated at 600 °C in a vacuum, which improved their electrochemical performance significantly. Electrochemical results demonstrated that the electrode capacity can be increased by 27/26 and 95/93 μAh in unheated and heated buckypaper current collectors, respectively. The measured discharge/charge capacities of the USi_HBP electrode were 108/106 μAh after 100 cycles, corresponding to a Coulombic efficiency of 98.1%, whereas the HSi_HBP electrode indicated a discharge/charge capacity of 193/192 μAh at the 100th cycle, corresponding to a capacity retention of 99.5%. In particular, the HSi_HBP electrode can decrease the capacity by less than 1.5% compared with the value of the first cycle after 100 cycles, demonstrating excellent electrochemical stability.     

Optimization of Sputtering Process for Medium Entropy Alloy Nanotwinned CoCrFeNi Thin Films by Taguchi Method

We demonstrate a systematic study optimizing the properties of CoCrFeNi medium entropy alloy (MEA) thin films by tuning the deposition parameters of the pulsed direct current (DC) magnetron sputtering process. The chemical composition and microstructure of thin films were studied with energy dispersive X-ray spectroscopy (EDS), an X-ray diffractometer (XRD) and a transmission electron microscope (TEM). Abundant nanotwins and the dual face-centered cubic−hexagonal close-packed (FCC-HCP) phases were formed in some specimens. The Taguchi experimental method and analysis of variance (ANOVA) were applied to find the optimized parameters. The control factors are five deposition parameters: substrate bias, substrate temperature, working pressure, rotation speed and pulsed frequency. According to the signal-to-noise ratio results, the optimized parameters for low electrical resistivity (98.2 ± 0.8 μΩ·cm), low surface roughness (0.5 ± 0.1 nm) and high hardness (9.3 ± 0.2 GPa) were achieved and verified with confirmed experiments.     

Mechanical Properties and Microstructural Evolution of TiNi-Based Intermetallic Alloy with Nb Addition

TiNi intermetallic alloys were prepared with 2, 4 and 6 at.% niobium (Nb) addition. The mechanical properties and microstructures of the alloys were investigated under both static (1 × 10⁻¹ to 1 × 10⁻³ s⁻¹) and dynamic (4 × 10³ to 6 × 10³ s⁻¹) loading conditions. The intermetallic alloy structures and surface morphologies of the alloys were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. In addition, the fracture morphologies were observed by optical microscopy (OM). It was shown that the addition of 2 to 4 at.% Nb increased the strength of the TiNi alloy. However, as the level of Nb addition was further increased to 6 at.%, a significant reduction in strength occurred. For a constant Nb addition, the plastic flow stress and strain rate sensitivity increased with increasing strain rate under both loading conditions (static and dynamic). The XRD and SEM results showed that the original surface morphologies were composed primarily of dendritic structures and fine β-Nb + TiNi eutectic systems. Moreover, the OM results showed that the alloys underwent a transition from a brittle fracture mode to a ductile fracture mode as the level of Nb addition increased.     

Measurement of Shear Strengths of Cu Films Using Precise Chip Forming

The mechanical properties of thin films are under-researched because of the challenges associated with conventional experimental methods. We demonstrate a technique for determining the intrinsic shear strength and strain of thin films using a nano-cutting technique based on an orthogonal cutting model with precise control of the cutting system. In this study, electroplated Cu films with thicknesses of 1.5 μm and 5 μm and a sputtered Cu film with a thickness of 130 nm were fabricated to evaluate the mechanical strength. Experiments revealed a shear strength of approximately 310 MPa with a shear strain of 1.57 for the electroplated Cu film and a shear strength of 389 MPa with a shear strain of 2.03 for the sputtered Cu film. In addition, X-ray diffraction analysis was performed to correlate the experimental results.     

Enhanced Corrosion Resistance of Layered Double Hydroxide Films on Mg Alloy: The Key Role of Cationic Surfactant

In this study, dense anticorrosion magnesium–aluminum layered double hydroxide (MgAl-LDH) films were prepared for the first time by introducing a cationic surfactant tetradecyltrimethyl ammonium bromide (TTAB) in the process of in situ hydrothermal synthesis of Mg-Al LDH films on an AZ31 magnesium alloy. Results of XRD, FTIR, and SEM confirmed that TTAB forms the MgAl-LDH-TTAB, although TTAB cannot enter into LDH layers, and MgAl-LDH-TTAB powders are much smaller and more homogenous than MgAl-CO₃²⁻-LDH powders. Results of SEM, EDS, mapping, and XPS confirmed that TTAB forms the MgAl-LDH-TTAB films and endows LDH films with denser structure, which provides films with better shielding efficiency. Results of potentiodynamic polarization curves (PDP) and electrochemical impedance spectroscopy (EIS) confirmed that MgAl-LDH-TTAB_{x g} films have better corrosion resistance than an MgAl-CO₃²⁻-LDH film. The corrosion current density (i_corr) of the MgAl-LDH-TTAB_{0.35 g} film in 3.5 wt.% NaCl solution was reduced to 1.09 × 10⁻⁸ A.cm⁻² and the |Z|_{f = 0.05 Hz} value was increased to 4.48 × 10⁵ Ω·cm². Moreover, the increasing concentration of TTAB in MgAl-LDH-TTAB_{x g} (x = 0.025, 0.05, 0.1, 0.2 and 0.35) provided denser outer layer LDH films and thereby increased the corrosion resistance of the AZ31 Mg alloy. Additionally, the |Z|_{f = 0.05 Hz} values of the MgAl-LDH-TTAB_{0.35 g} film still remained at 10⁵ Ω·cm² after being immersed in 3.5 wt.% NaCl solution for 168 h, implying the good long-term corrosion resistance of MgAl-LDH-TTAB_{x g} films. Therefore, introducing cationic surfactant in the process of in situ hydrothermal synthesis can be seen as a novel approach to creating efficient anticorrosion LDH films for Mg alloys.     

X-ray Photoelectron Spectroscopy (XPS) Depth Profiling for Evaluation of La2Zr2O7 Buffer Layer Capacity

Lanthanum zirconate (LZO) films from water-based precursors were deposited on Ni-5%W tape by chemical solution deposition. The buffer capacity of these layers includes the prevention of Ni oxidation of the substrate and Ni penetration towards the YBCO film which is detrimental for the superconducting properties. X-ray Photoelectron Spectroscopy depth profiling was used to study the barrier efficiency before and after an additional oxygen annealing step, which simulates the thermal treatment for YBCO thin film synthesis. Measurements revealed that the thermal treatment in presence of oxygen could severely increase Ni diffusion. Nonetheless it was shown that from the water-based precursors’ buffer layers with sufficient barrier capacity towards Ni penetration could be synthesized if the layers meet a certain critical thickness and density.     

The Effects of Zr Doping on the Optical,Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

Transparent conducting oxides (TCOs), with high optical transparency (≥85%) and low electrical resistivity (10⁻⁴ Ω·cm) are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin oxide with lower cost, earth abundant materials. In the current study, we dope Zr into thin ZnO films grown by atomic layer deposition (ALD) to target properties of an efficient TCO. The effects of doping (0–10 at.% Zr) were investigated for ~100 nm thick films and the effect of thickness on the properties was investigated for 50–250 nm thick films. The addition of Zr⁴⁺ ions acting as electron donors showed reduced resistivity (1.44 × 10⁻³ Ω·cm), increased carrier density (3.81 × 10²⁰ cm⁻³), and increased optical gap (3.5 eV) with 4.8 at.% doping. The increase of film thickness to 250 nm reduced the electron carrier/photon scattering leading to a further reduction of resistivity to 7.5 × 10⁻⁴ Ω·cm and an average optical transparency in the visible/near infrared (IR) range up to 91%. The improved n-type properties of ZnO: Zr films are promising for TCO applications after reaching the targets for high carrier density (>10²⁰ cm⁻³), low resistivity in the order of 10⁻⁴ Ω·cm and high optical transparency (≥85%).     

Alloy Design and Fabrication of Duplex Titanium-Based Alloys by Spark Plasma Sintering for Biomedical Implant Applications

Very often, pure Ti and (α + β) Ti-6Al-4V alloys have been used commercially for implant applications, but ensuring their chemical, mechanical, and biological biocompatibility is always a serious concern for sustaining the long-term efficacy of implants. Therefore, there has always been a great quest to explore new biomedical alloying systems that can offer substantial beneficial effects in tailoring a balance between the mechanical properties and biocompatibility of implantable medical devices. With a view to the mechanical performance, this study focused on designing a Ti-15Zr-2Ta-xSn (where x = 4, 6, 8) alloying system with high strength and low Young’s modulus prepared by a powder metallurgy method. The experimental results showed that mechanical alloying, followed by spark plasma sintering, produced a fully consolidated (α + β) Ti-Zr-Ta-Sn-based alloy with a fine grain size and a relative density greater than 99%. Nevertheless, the shape, size, and distribution of α-phase precipitations were found to be sensitive to Sn contents. The addition of Sn also increased the α/β transus temperature of the alloy. For example, as the Sn content was increased from 4 wt.% to 8 wt.%, the β grains transformed into diverse morphological characteristics, namely, a thin-grain-boundary α phase (α_GB), lamellar α colonies, and acicular α_s precipitates and very low residual porosity during subsequent cooling after the spark plasma sintering procedure, which is consistent with the relative density results. Among the prepared alloys, Ti-15Zr-2Ta-8Sn exhibited the highest hardness (s340 HV), compressive yield strength (~1056 MPa), and maximum compressive strength (~1470). The formation of intriguing precipitate–matrix interfaces (α/β) acting as dislocation barriers is proposed to be the main reason for the high strength of the Ti-15Zr-2Ta-8Sn alloy. Finally, based on mechanical and structural properties, it is envisaged that our developed alloys will be promising for indwelling implant applications.     

Effects of Ti Target Purity and Microstructure on Deposition Rate,Microstructure and Properties of Ti Films

Three titanium (Ti) targets with different purities were used to prepare Ti films on polyimide substrates by DC magnetron sputtering. The microstructures of Ti films were characterized by a metallographic microscope, X-ray diffractometer, field emission scanning electron microscope and three-dimensional surface topography instrument. In this study, we investigated the effects of Ti target purity and microstructure on film deposition rate, surface roughness, microstructure and resistivity. The results show that the deposition rate increased with increasing Ti target purity. Ti film deposited by the high-purity (99.999%) Ti target has fewer surface particles with smaller size, lower surface roughness and lower resistivity when compared to that prepared by the Ti target of low purity (99.7%). The surface roughness of Ti film prepared by the high-purity Ti target was Sa = 121 nm, the deposition rate was 16.3 nm/min and the resistivity was 6.9 × 10⁻⁶ Ω·m. For Ti targets of the same purity, the performance of Ti film prepared by a target with equiaxed α-phase grains is better than that of Ti film prepared by a target with twins and β-phase grains.     

Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Magnesium hydroxide (Mg(OH)₂) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO₃)₂ and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)₂ thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)₂ were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 10⁵ Ωcm. Thus, the transparent and semiconducting Mg(OH)₂ thin films were successfully prepared by DDD.     

Grain Size Effect of the γ Phase Precipitation on Martensitic Transformation and Mechanical Properties of Ni–Mn–Sn–Fe Heusler Alloys

Isothermal annealing of a eutectic dual phase Ni–Mn–Sn–Fe alloy was carried out to encourage grain growth and investigate the effects of grain size of the γ phase on the martensitic transformation behaviour and mechanical properties of the alloy. It is found that with the increase of the annealing time, the grain size and volume fraction of the γ phase both increased with the annealing time predominantly by the inter-diffusion of Fe and Sn elements between the γ phase and the Heusler matrix. The isothermal anneals resulted in the decrease of the e/a ratio and suppression of the martensitic transformation of the matrix phase. The fine γ phase microstructure with an average grain size of 0.31 μm showed higher fracture strength and ductility values by 28% and 77% compared to the coarse-grained counterpart with an average grain size of 3.31 μm. The fine dual phase microstructure shows a quasi-linear superelasticity of 4.2% and very small stress hysteresis during cyclic loading, while the coarse dual phase counterpart presents degraded superelasticity of 2.6% and large stress hysteresis. These findings indicate that grain size refinement of the γ phase is an effective approach in improving the mechanical and transformation properties of dual phase Heusler alloys.     

Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics

Motivated by their utility in CdTe-based thin film photovoltaics (PV) devices, an investigation of thin films of the magnesium-zinc oxide (Mg_xZn_1−xO or MZO) alloy system was undertaken applying spectroscopic ellipsometry (SE). Dominant wurtzite phase MZO thin films with Mg contents in the range 0 ≤ x ≤ 0.42 were deposited on room temperature soda lime glass (SLG) substrates by magnetron co-sputtering of MgO and ZnO targets followed by annealing. The complex dielectric functions ε of these films were determined and parameterized over the photon energy range from 0.73 to 6.5 eV using an analytical model consisting of two critical point (CP) oscillators. The CP parameters in this model are expressed as polynomial functions of the best fitting lowest CP energy or bandgap E₀ = E_g, which in turn is a quadratic function of x. As functions of x, both the lowest energy CP broadening and the Urbach parameter show minima for x ~ 0.3, which corresponds to a bandgap of 3.65 eV. As a result, it is concluded that for this composition and bandgap, the MZO exhibits either a minimum concentration of defects in the bulk of the crystallites or a maximum in the grain size, an observation consistent with measured X-ray diffraction line broadenings. The parametric expression for ε developed here is expected to be useful in future mapping and through-the-glass SE analyses of partial and complete PV device structures incorporating MZO.     

Synthesis and Characterization of Al- and SnO2-Doped ZnO Thermoelectric Thin Films

The effect of SnO₂ addition (0, 1, 2, 4 wt.%) on thermoelectric properties of c-axis oriented Al-doped ZnO thin films (AZO) fabricated by pulsed laser deposition on silica and Al₂O₃ substrates was investigated. The best thermoelectric performance was obtained on the AZO + 2% SnO₂ thin film grown on silica, with a power factor (PF) of 211.8 μW/m·K² at 573 K and a room-temperature (300 K) thermal conductivity of 8.56 W/m·K. PF was of the same order of magnitude as the value reported for typical AZO bulk material at the same measurement conditions (340 μW/m·K²) while thermal conductivity κ was reduced about four times.