Ultrafast interface charge transfer dynamics on P3HT/MWCNT nanocomposites probed by resonant Auger spectroscopy

The interfacial electronic structure and charge transfer dynamics of poly-3-hexylthiophene (P3HT) and multi-walled carbon nanotube (Fe-MWCNT) nanocomposites were investigated by near-edge X-ray absorption fine structure (NEXAFS) and resonant Auger (RAS) spectroscopies around the sulfur K-edge. Nanocomposites with 5 wt% (P3HT/Fe-MWCNT-5%) and 10 wt% (P3HT/Fe-MWCNT-10%) of Fe-MWCNT species were prepared and compared with pristine P3HT film. The quantitative NEXAFS analysis shows a strong π–π interchain interaction of the pristine P3HT polymer film, which is reduced by the presence of the Fe-MWCNT. S–KL_2,3L_2,3 RAS spectra were measured at photon energies corresponding to the main electronic transitions appearing in the S–K edge NEXAFS spectrum. Ultrafast charge transfer times were estimated from the RAS spectra using the core-hole clock approach with the S 1s core-hole lifetime as an internal clock. The π–π interchain charge transfer time increases from 4.7 fs on pristine P3HT polymer to 6.5 fs on the P3HT/Fe-MWCNT-5% nanocomposite. The electronic coupling between P3HT and Fe-MWCNT species occurs mainly through the P3HT π* molecular orbital. The increase of Fe-MWCNT concentration from 5 to 10 wt% reduces the charge transfer rate at the resonance maximum due probably to Fe-MWCNT aggregation, reducing the P3HT and Fe-MWCNT electronic coupling.

The electronic coupling between P3HT polymer and multi-walled carbon nanotubes was elucidated using NEXAFS and core hole clock approaches.     

Atomic-scale investigation of MgO growth on fused quartz using angle-dependent NEXAFS measurements

The phenomena related to thin film growth have always been interesting to the scientific community. Experiments related to these phenomena not only provide an understanding but also suggest a path for the controlled growth of these films. For the present work, MgO thin film growth on fused quartz was investigated using angle-dependent near-edge X-ray absorption fine structure (NEXAFS) measurements. To understand the growth of MgO, sputtering was allowed for 5, 10, 25, 36, 49, 81, 144, 256, and 400 min in a vacuum better than 5.0 × 10⁻⁷ torr. NEXAFS measurements revealed the evolution of MgO at the surface of fused quartz for sputtering durations of 144, 256, and 400 min. Below these sputtering durations, no MgO was observed. NEXAFS measurements further envisaged a systematic improvement of Mg²⁺ ion coordination in the MgO lattice with the sputtering duration. The onset of non-interacting molecular oxygen on the surface of the sputtered species on fused quartz was also observed for sputtering duration up to 81 min. Angle-dependent measurements exhibited the onset of an anisotropic nature of the formed chemical bonds with sputtering, which dominated for higher sputtering duration. X-ray diffraction (XRD) studies carried out for sputtering durations of 144, 256, and 400 min exhibited the presence of the rocksalt phase of MgO. Annealing at 700 °C led to the dominant local electronic structure and improved the crystallinity of MgO. Rutherford backscattering spectrometry (RBS) and cross-sectional scanning electron microscopy (SEM) revealed a layer of almost 80 nm was obtained for a sputtering duration of 400 min. Thus, these angle-dependent NEXAFS measurements along with XRD, RBS, and SEM analyses were able to give a complete account for the growth of the thin films. Moreover, information specific to the coordination of the ions, which is important in case of ultrathin films, could be obtained successfully using this technique.

Near edge X-ray absorption fine structure measurements reveal the formation of MgO on fused quartz substrate.     

Reducing uncertainty in simulation estimates of the surface tension through a two-scale finite-size analysis: thicker is better

Recent simulation studies of the surface tension γ, and other properties of thin free-standing films, have revealed unexpected finite size effects in which the variance of the properties vary monotonically with the in-plane width of the films, complicating the extrapolation of estimates of film properties to the thermodynamic limit. We carried out molecular dynamics simulations to determine the origin of this phenomenon, and to address the practical problem of developing a more reliable methodology for estimating γ in the thermodynamic limit. We find that there are two distinct finite size effects that must be addressed in a finite size analysis of γ in thin films. The first finite size scale is the in-plane width of the films and the second scale is the simulation cell size in the transverse direction. Increasing the first scale enhances fluctuations in γ, measured by the standard deviation of their distribution, while increasing the second reduces γ fluctuations due to a corresponding increased ‘freedom’ of the film to fluctuate out of plane. We find that using progressively large simulation cells in the transverse direction, while keeping the film width fixed to an extent in which the full bulk liquid zone is developed, allows us to obtain a smooth extrapolation to the thermodynamic limit, enabling a reduction of the γ uncertainty to a magnitude on the order of 1% for systems having a reasonably large size, i.e., O (1 μm).

The variance in the surface tension of systems under vapor/liquid equilibrium is strongly affected by the size of the interfacial area. Wider layers increase the variance, but these increments disappear as the interfacial area grows.     

Consequences of gamma-ray irradiation on structural and electronic properties of PEDOT:PSS polymer in air and vacuum environments

In this work, the effects of gamma-ray irradiation (up to 3 kGy) on the structural and electronic properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), irradiated in air and vacuum environments are systematically investigated. Raman spectroscopy indicates that there is no significant change in structural conformation of PEDOT:PSS film after gamma-ray irradiation. However, the conductivity of the film decreases as a function of dose in both air and vacuum environments, which can be deduced as a result of defects created in the structure. Hall effect measurements showed higher carrier concentration when the samples are irradiated under vacuum in comparison to the air environment, whereas mobility decreases as a function of dose irrespective of the environment. Furthermore, the electron spin resonance spectra provided evidence of the evolution of polaron population after gamma-ray exposure of 3 kGy, due to the decrease in charge delocalization and molecular ordering of the molecules. This decrease in conductivity and mobility of the PEDOT:PSS films irradiated in air and vacuum environments can be mainly ascribed to the defects and radical formation after gamma-ray exposure, favoring chain scission or cross-linking of the polymers.

Effects of gamma-ray irradiation (up to 3 kGy) on the structural and electronic properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), irradiated in air and vacuum environments are systematically investigated.     

The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films

The development of thin-film thermoelectric applications in sensing and energy harvesting can benefit largely from suitable deposition methods for earth-abundant materials. In this study, p-type copper oxide thin films have been prepared on soda lime silicate glass by direct current (DC) magnetron sputtering at room temperature from a pure copper metallic target in an argon atmosphere, followed by subsequent annealing steps at 300 °C under various atmospheres, namely air (CuO:air), nitrogen (CuO:N) and oxygen (CuO:O). The resultant films have been studied to understand the influence of various annealing atmospheres on the structural, spectroscopic and thermoelectric properties. X-ray diffraction (XRD) patterns of the films showed reflexes that could be assigned to those of crystalline CuO with a thin mixed Cu^(I)Cu^(II) oxide, which was also observed by near edge X-ray absorption fine structure spectroscopy (NEXAFS). The positive Seebeck coefficient (S) reached values of up to 204 μV K⁻¹, confirming the p-type behavior of the films. Annealing under oxygen provided a significant improvement in the electrical conductivity up to 50 S m⁻¹, resulting in a power factor of 2 μW m⁻¹ K⁻². The results reveal the interplay between the intrinsic composition and the thermoelectric performance of mixed copper oxide thin films, which can be finely adjusted by simply varying the annealing atmosphere.

This study reveals the interplay between the composition and thermoelectric performance of mixed copper oxide thin films, which can be finely adjusted by varying the annealing atmosphere.     

Effect of electron beam irradiation on the structural characteristics and functional properties of rice proteins

A study of the structural and functional changes of rice proteins (RPs) induced by electron beam irradiation (EBI) at 5 kGy, 10 kGy, 20 kGy, and 30 kGy was performed. The microcosmic surface structures of the RPs were changed and fragmented due to irradiation damage occurring on the RP surfaces. The changes in the UV visible spectra, intrinsic fluorescence spectra, surface hydrophobicity and SH and SS group contents indicated that the RPs unfolded after EBI treatment. In addition, the degree of conformational change was increased with increasing EBI treatment doses. FTIR analysis showed that the secondary structure redistributed, showing decreases in α-helices and concomitant increases in β-sheets, β-turns and random coils. The functional properties, emulsifying abilities, water adsorption capacities and oil adsorption capacities of the irradiated RPs improved dose-dependently, with maximums occurring at 30 kGy. The foaming properties were also enhanced by EBI; however, this effect was not dose-dependent. In contrast, all of the samples irradiated by electron beams presented lower emulsion stability than the control (0 kGy). These results provide a theoretical basis for the application of EBI in improving protein properties in the future.

A study of the structural and functional changes of rice proteins (RPs) induced by electron beam irradiation (EBI) at 5 kGy, 10 kGy, 20 kGy, and 30 kGy was performed.     

Gamma radiation crosslinking of PVA/myrrh resin thin film for improving the post-harvest time of lemon fruits

Preparation of a thin film of polyvinyl alcohol (PVA)/myrrh natural resin using a low gamma irradiation dose (1 kGy) was investigated towards increasing the post-harvest time of lemon fruit. Different analytical techniques, such as Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, and mapping techniques were used to characterize the prepared thin film. This investigation was carried out to evaluate the effect of different concentrations of myrrh as an edible coating in prolonging shelf life and preserving the quality of lemon fruits (Citrus aurantifolia). Lemons were immersed directly in PVA solution containing 1%, 2%, and 3% concentrations of myrrh and then stored at ambient (25 ± 1 °C) and low (4 ± 1 °C) temperatures. The disease severity, acidity, total soluble solids (TSS), and ascorbic acid contents were tested after the coating with the PVA/myrrh thin film at different temperatures (4 °C and 25 °C) for different storage times (7 and 14 days). The application of different concentrations of the synthesized PVA/myrrh thin film (1%, 2%, and 3%) significantly reduced green mold disease symptoms and disease severity in the lemon fruits. The acidity value (pH value) was the lowest for the 2% myrrh treatment after 7 °C days at 25 °C, followed by the 1% myrrh treatment under the same conditions. The highest TSS was observed after the treatment for 7 days at 25 °C, with a value of 8.1 g dL⁻¹. A high ascorbic acid concentration (33.5 mg dL⁻¹) was noted after coating the lemons with the 1% PVA/myrrh thin film for 7 days at 25 °C. The results show that the application of a PVA/myrrh thin film extends the shelf-life and maintains the quality of lemon fruits by decreasing the levels of evaporation from the fruits and loss of weight due to the delay of the complete ripening stage of the lemon fruits.

Preparation of a thin film of polyvinyl alcohol (PVA)/myrrh natural resin using a low gamma irradiation dose (1 kGy) was investigated. The results show that PVA/myrrh thin film extends the shelf-life and maintains the quality of lemon fruits.     

Effect of localized UV irradiation on the crystallinity and electrical properties of dip-coated polythiophene thin films

Ensuring high performance in polymer devices requires conjugated polymers with interchain π–π stacking interactions via van der Waals forces, which can induce structural changes in the polymer thin film. Here, we present a systematic study of using simple localized UV irradiation to overcome the low crystallinity and poor charge carrier transport in dip-coated poly(3-hexylthiophene) (P3HT) thin films, which are consequences of the limited selection of solvents compatible with the dip-coating process. UV irradiation for only a few minutes effectively promoted P3HT chain self-assembly and association in the solution state. Brief UV irradiation of a P3HT solution led to well-ordered molecular structures in the resultant P3HT films dip-coated using a low boiling point solvent with rapid solvent evaporation. In addition, the position at which UV light was irradiated on the dip-coating solutions was varied, and the effects of the irradiation position and time on the crystallinity and electrical properties of the resultant P3HT thin films were investigated.

When the top part of the solution was irradiated with UV light, the dip-coated P3HT film showed enhanced crystallinity and electrical properties.     

Intensive evaluation of radiation stability of phlogopite single crystals under high doses of γ-ray irradiation

The evaluation of radiation stability of clay is important for the disposal of high-level radioactive waste (HLRW). In this study, phlogopite single crystals were irradiated by Co-60 γ-rays in air at a dose rate of 3.254 kGy h⁻¹ with doses up to 1000 kGy. Subsequently, the radiation stability and mechanism of radiation damage were explored by RS, FT-ATR, XRD, TGA, CA, and SEM techniques. In general, phlogopite single crystals show worthwhile radiation resistance toward their chemical structure but poor radiation stability toward their crystalline structure. Upon irradiation, their chemical structure changed slightly, while their crystalline structure varied obviously. For the 1000 kGy-irradiated sample, the interlayer space d of the (001) lattice plane increased by more than 1% with a value close to 0.13 Å, showing expansion. This could be mainly ascribed to H₂O radiolysis and framework breakage: the former seems more important. These variations had a considerable impact on surface hydrophilicity, while they had marginal impacts on thermal stability and morphology: the effect on surface hydrophilicity is dose-dependent. A lower dose of irradiation sufficiently reduced the hydrophilicity, while a higher dose recovered the hydrophilicity. For instance, the CA increased from 14° to 28° with dose increases from 0 kGy to 200 kGy and then decreased to approximately 20° as the dose continued to increase to 1000 kGy. In general, the crystalline structure is more sensitive toward γ-ray irradiation and phlogopites could be regarded as poorly radiation-resistant. In this procedure, H₂O radiolysis occupies a crucial role and seems to be the dominant factor. This finding is meaningful to evaluate the radiation stability of clay matrixes and to understand the microscopic property variations in clays used in practice when they are under irradiation.

Upon irradiation, the framework underwent breakage, H₂O underwent radiolysis, and the radiolysis products reacted with the framework, expanding the lattice plane.     

Atomic layer deposition of rhodium and palladium thin film using low-concentration ozone

Rhodium (Rh) and palladium (Pd) thin films have been fabricated using an atomic layer deposition (ALD) process using Rh(acac)₃ and Pd(hfac)₂ as the respective precursors and using short-pulse low-concentration ozone as the co-reactant. This method of fabrication does away with the need for combustible reactants such as hydrogen or oxygen, either as a precursor or as an annealing agent. All previous studies using only ozone could not yield metallic films, and required post treatment using hydrogen or oxygen. In this work, it was discovered that the concentration level of ozone used in the ALD process was critical in determining whether the pure metal film was formed, and whether the metal film was oxidized. By controlling the ozone concentration under a critical limit, the fabrication of these noble metal films was successful. Rhodium thin films were deposited between 200 and 220 °C, whereas palladium thin films were deposited between 180 and 220 °C. A precisely controlled low ozone concentration of 1.22 g m⁻³ was applied to prevent the oxidation of the noble metallic film, and to ensure fast growth rates of 0.42 Å per cycle for Rh, and 0.22 Å per cycle for Pd. When low-concentration ozone was applied to react with ligand, no excess ozone was available to oxidize the metal products. The surfaces of deposited films obtained the RMS roughness values of 0.30 nm for Rh and 0.13 nm for Pd films. The resistivities of 18 nm Rh and 22 nm Pd thin films were 17 μΩ cm and 63 μΩ cm.

Rh and Pd metallic thin films were fabricated by atomic layer deposition using Rh(acac)₃ and Pd(hfac)₂ precursors, and only low-concentration ozone as co-reactant.     

Formation of buried superconducting Mo2N by nitrogen-ion-implantation

Nitrogen ion implantation is a useful technique to put nitrogen ions into lattices. In this work, nitrogen ion implantation into epitaxial Mo films is performed to create a buried superconducting γ-Mo₂N. Atomically flat epitaxial (110) Mo films are grown on (0001) Al₂O₃. By impinging nitrogen ions, where the beam energy is fixed to 20 keV, we observe (111) γ-Mo₂N diffraction and the formation of a γ-Mo₂N layer from X-ray reflectivity. Magnetization and transport measurements clearly support a superconducting layer in the implanted film. Our strategy shows that formation of a buried superconducting layer can be achieved through ion implantation and self-annealing.

Formation of chemically distinct interfaces, including crystalline buried-superconducting Mo₂N, by low-energy nitrogen ion implantation in an epitaxial molybdenum thin film.     

Physical and photocatalytic properties of sprayed Dy doped ZnO thin films under sunlight irradiation for degrading methylene blue

Dysprosium-doped zinc oxide (ZnO) thin films have been prepared through spray pyrolysis onto glass substrates. Cross-sections of the deposited thin films were assessed through Scanning Electron Microscopy (SEM), showing thicknesses between 200 and 300 nm. The thin film roughness was evaluated using the obtained images from the Atomic Force Microscope (AFM) micrographs. The crystallographic structure of the samples was analyzed by X-ray diffraction (XRD) revealing polycrystalline thin films. However, the slight shift towards a higher 2θ angle in Dy-doped ZnO films as compared to the pure ones indicates the incorporation of Dy³⁺ into the ZnO crystal lattice. The analysis of the oxidation state via X-ray photoelectron spectroscopy (XPS) confirms the incorporation of Dy ions in the ZnO matrix. Besides, UV-Vis-NIR spectrophotometry analysis and photoluminescence (PL) spectroscopy showed that bandgap energy values of ZnO decreased when dysprosium doping increased. Therefore, Dy doped ZnO thin films can be potentially used as a solar-light-driven photocatalyst. Among the different doping yields, the ZnO doped with 6% dysprosium provides the highest degradation rate for methylene blue (MB) under solar irradiation. Specifically, 9% of dye degradation was achieved under sunlight irradiation for 120 minutes.

Dysprosium-doped zinc oxide (ZnO) thin films prepared through spray pyrolysis show outstanding photocatalytic activity for the degradation of methylene blue.     

Anomalous kinetic roughening in growth of MoS2 films under pulsed laser deposition

Growth dynamics of thin films expressed by scaling theory is a useful tool to quantify the statistical properties of the surface morphology of the thin films. To date, the growth mechanism for 2D van der Waals materials has been rarely investigated. In this work, an experimental investigation was carried out to identify the scaling behavior as well as the growth mechanism of 2D MoS₂ thin films, grown on glass substrates by pulsed laser deposition for different deposition time durations, using atomic force microscopy images. The growth of MoS₂ films evolved from layer-by-layer to layer plus island with the increase in deposition time from 20 s to 15 min. The film surface exhibited anisotropic growth dynamics in the vertical and lateral directions where RMS roughness varied with deposition time as w ∼ t^β with the growth exponent β = 0.85 ± 0.11, while the lateral correlation length ξ was ξ = t^1/z with 1/z = 0.49 ± 0.09. The films showed a local roughness exponent α_loc = 0.89 ± 0.01, global roughness exponent α = 1.72 ± 0.14 and spectral roughness exponent α_s = 0.85 ± 0.03, suggesting that the growth of MoS₂ thin films followed intrinsic anomalous scaling behavior (α_s < 1, α_loc = α_s ≠ α). Shadowing owing to conical incoming particle flux distribution towards the substrate during deposition has been attributed to the anomalous growth mode. The optical properties of the films, extracted from ellipsometric analysis, were also correlated with RMS roughness and cluster size variation which unveiled the important role played by surface roughness and film density.

MoS₂ films grown on glass by pulsed laser deposition technique evolve from bilayer to bulk-like structure with time following intrinsic anomalous scaling behaviour caused by shadowing effect during deposition.     

Oxidation-degree-dependent moisture-induced actuation of a graphene oxide film

Multilayered films prepared from graphene oxide (GO) subjected to a single oxidation process (1GO) can actuate in response to moisture, whereas those prepared from GO subjected to two oxidation processes (2GO) lose this ability. To elucidate the origin of this difference, the structures and properties of various multilayered films and their contents were analyzed. According to atomic force microscopy images, the lateral size of the GO monolayer in 2GO (2.0 ± 0.4 μm) was smaller than that in 1GO (3.2 ± 0.4 μm), although this size difference did not affect actuation. Scanning electron microscopy images of the cross sections of both films showed fine multilayered structures and X-ray diffraction measurements showed the moisture sensitive reversible change in the interlayer distances for both films. Both films adsorbed 30 wt% moisture in 60 s with different water contents at the bottom moist sides and top air sides of the films. Nanoindentation experiments showed hardness values (1GO: 156 ± 67 MPa; 2GO: 189 ± 97 MPa) and elastic modulus values (1GO: 4.7 ± 1.7 GPa; 2GO: 5.8 ± 3.2 GPa) typical of GO, with no substantial difference between the films. On the contrary, the 1GO film bent when subjected to a weight equal to its own weight, whereas the 2GO film did not. Such differences in the macroscopic hardness of GO films can affect their moisture-induced actuation ability.

The moisture-induced actuation behavior of graphene oxide (GO) thin films was found to depend on their extent of oxidation.     

Difference in structural and chemical properties of sol–gel spin coated Al doped TiO2, Y doped TiO2 and Gd doped TiO2 based on trivalent dopants

In this research, pure titanium dioxide (TiO₂) and doped TiO₂ thin film layers were prepared using the spin coating method of titanium(iv) butoxide on a glass substrate from the sol–gel method and annealed at 500 °C. The effects on the structural and chemical properties of these thin films were then investigated. The metal doped TiO₂ thin film which exists as trivalent electrons consists of aluminium (Al), yttrium (Y) and gadolinium (Gd). The anatase phase of the thin films was observed and it was found that the crystal size became smaller when the concentration of thin film increased. The grain size was found to be 0.487 to 13.925 nm. The types of surface morphologies of the thin films were nanoporous, with a little agglomeration and smaller nanoparticles corresponding to Al doped TiO₂, Y doped TiO₂ and Gd doped TiO₂, respectively. The trivalent doping concentration of the thin films increased with a rising of thickness of the thin film. This can contribute to the defects that give advantages to the thin film when the mobility of the hole carriers is high and the electrons of Ti can move easily. Thus, Ti³⁺ existed as a defect state in the metal doped TiO₂ thin film based on lattice distortion with a faster growth thin film that encouraged the formation of a higher level of oxygen vacancy defects.

Ti³⁺ state in metal doped TiO₂ based on lattice distortion that encouraged the formation of oxygen vacancy defects.     

Adsorption of an Au atom and dimer on a thin θ-Al2O3/NiAl(100) film: dependence on the thickness of the θ-Al2O3 film

With calculations based on density-functional theory (DFT) we investigated the adsorption of a single Au atom and a dimer on thin θ-Al₂O₃(001) films supported on NiAl(100). The interaction of the Au adsorbates with the surface was shown to depend on the thickness of the film. The adsorption energy for an Au atom on θ-Al₂O₃(001)/NiAl(100) of film thickness ≤four atomic layers was significantly enhanced—over three times that on a bulk θ-Al₂O₃(001) surface, and accompanied with a shortened Au-oxide bond and an uplifted Au-binding Al. The strong Au-surface interaction involved a decreased work function of θ-Al₂O₃(001)/NiAl(100) and consequently drove charge to transfer from the substrate to the adsorbed Au atom; the charge was transferred from NiAl, through alumina, on monolayer θ-Al₂O₃(001)/NiAl(100), but directly from alumina on thicker layers. For an Au dimer, both upright (end-on) and flat-lying (side-on) geometries existed. The flat-lying dimer was preferred on mono- and tri-layer alumina films, having a greater adsorption energy but a weakened Au–Au bond, whereas the upright geometry prevailed for films of other thickness, having a weaker adsorption energy and being less charged, similar to that on a bulk θ-Al₂O₃(001) surface. The results imply an opportunity to control the properties and morphologies of metal clusters supported on an oxide film by tuning its thickness.

The adsorption behavior of a single Au atom and a dimer on thin-film θ-Al₂O₃(001)/NiAl(100) varies with the thickness of the film.     

Atomic layer deposition of superparamagnetic ruthenium-doped iron oxide thin film

Due to the several applications of biosensors, such as magnetic hyperthermia and magnetic resonance imaging, the use of superparamagnetic nanoparticles or thin films for preparing biosensors has increased greatly. We report herein on a strategy to fabricate a nanostructure composed of superparamagnetic thin films. Ruthenium-doped iron oxide thin films were deposited by using atomic layer deposition at 270 and 360 °C. FeCl₃ and Ru(EtCp)₂ were used as metal precursors and H₂O/O₂ as the oxygen precursor. Doping with ruthenium helps to lower the formation temperature of hematite (α-Fe₂O₃). Ruthenium content was changed from 0.42 at% up to 29.7 at%. Ru-doped films had a nano-crystallized structure of hematite with nanocrystal sizes from 4.4 up to 7.8 nm. Magnetization at room temperature was studied in iron oxide and Ru-doped iron oxide films. A new finding is a demonstration that in a Ru-doped iron oxide thin film superparamagnetic behavior of nanocrystalline materials (α-Fe₂O₃) is observed with the maximum magnetic coercive force H_c of 3 kOe. Increasing Ru content increased crystallite size of hematite and resulted in a lower blocking temperature.

In atomic layer deposited Ru-doped α-Fe₂O₃ thin films superparamagnetic behaviour of nanocrystallites is observed with the magnetic coercive force up to 3 kOe.     

Structural,magnetic and magneto-optical studies of Mn/Al bilayer thin films on GaAs substrates

Ferromagnetism and magnetic anisotropy in Mn–Al thin films can be of great interest due to their applications in spintronic components and as rare-earth free magnets. Temperature-dependent uniaxial anisotropy has been observed in ferromagnetic MnAl thin films, which is attributed to the modification of the tetragonal lattice distortion with the change in annealing temperature, confirmed by VSM, MOKE and XRD results; the annealing time did not affect the magnetic anisotropy. A simple evaporation technique was used to deposit the Mn/Al bilayer thin films (thickness ∼ 64 nm) on GaAs substrates. A comprehensive study of the effect of annealing temperature as well as annealing time on structural, microstructural, magnetic and magneto-optical properties are reported in this paper. The ferromagnetic phase was enriched in annealed samples, which was confirmed by XRD, MOKE and magnetic hysteresis loops. XRD results revealed that the ferromagnetic τ-phase was enhanced in annealed films with the increase in annealing temperature ≥ 400 °C. Surface roughness was estimated from the AFM micrographs and was found to be increased, whereas the mean grain size was decreased on annealing the as-deposited Mn/Al bilayer thin film. The gradual increase in magnetic coercivity was found on increasing the annealing temperature. It is interesting to note that the magnetic easy axis can be tuned by changing the annealing temperature of MnAl thin films, and the easy axis changes from perpendicular to parallel direction of the film plane when the annealing temperature varies from 400 °C to 500 °C. MOKE results were also found to be consistent with the magnetic results.

Ferromagnetism and magnetic anisotropy in Mn–Al thin films can be of great interest due to their applications in spintronic components and as rare-earth free magnets.     

Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells

Six different thin film solar cells consisting of either orthorhombic (α-SnS) or cubic (π-SnS) tin(ii) sulfide absorber layers have been fabricated, characterized and evaluated. Absorber layers of either π-SnS or α-SnS were selectively deposited by temperature controlled Aerosol Assisted Chemical Vapor Deposition (AA-CVD) from a single source precursor. α-SnS and π-SnS layers were grown on molybdenum (Mo), Fluorine-doped Tin Oxide (FTO), and FTO coated with a thin amorphous-TiO_x layer (am-TiO_x-FTO), which were shown to have significant impact on the growth rate and morphology of the as deposited thin films. Phase pure α-SnS and π-SnS thin films were characterized by X-ray diffraction analysis (XRD) and Raman spectroscopy (514.5 nm). Furthermore, a series of PV devices with an active area of 0.1 cm² were subsequently fabricated using a CdS buffer layer, intrinsic ZnO (i-ZnO) as an insulator and Indium Tin Oxide (ITO) as a top contact. The highest solar conversion efficiency for the devices consisting of the α-SnS polymorph was achieved with Mo (η = 0.82%) or FTO (η = 0.88%) as the back contacts, with respective open-circuit voltages (V_oc) of 0.135 and 0.144 V, and short-circuit current densities (J_sc) of 12.96 and 12.78 mA cm⁻². For the devices containing the π-SnS polymorph, the highest efficiencies were obtained with the am-TiO_x-FTO (η = 0.41%) back contact, with a V_oc of 0.135 V, and J_sc of 5.40 mA cm⁻². We show that mild post-fabrication hot plate annealing can improve the J_sc, but can in most cases compromise the V_oc. The effect of sequential annealing was monitored by solar conversion efficiency and external quantum efficiency (EQE) measurements.

Polymorph selective deposition of α- and π-SnS enables their evaluation as thin film PV absorber layers in various device structures.     

Effect of film thickness and evaporation rate on co-evaporated SnSe thin films for photovoltaic applications

SnSe thin films were deposited by a co-evaporation method with different film thicknesses and evaporation rates. A device with a structure of soda-lime glass/Mo/SnSe/CdS/i-ZnO/ITO/Ni/Al was fabricated. Device efficiency was improved from 0.18% to 1.02% by a film thickness of 1.3 μm and evaporation rate of 2.5 Å S⁻¹via augmentation of short-circuit current density and open-circuit voltage. Properties (electrical, optical, structural) and scanning electron microscopy measurements were compared for samples. A SnSe thin-film solar cell prepared with a film thickness of 1.3 μm and evaporation rate of 2.5 Å S⁻¹ had the highest electron mobility, better crystalline properties, and larger grain size compared with the other solar cells prepared. These data can be used to guide growth of high-quality SnSe thin films, and contribute to development of efficient SnSe thin-film solar cells using an evaporation-based method.

SnSe thin films were deposited by a co-evaporation method with different film thicknesses and evaporation rates.