| 无机砷化合物对HaCaT细胞毒性作用 |
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| 引用本文： | 陆景坤, 田艳, 陈朝军, 俞腾飞, 王一博, 李中燕. 无机砷化合物对HaCaT细胞毒性作用[J]. 中国公共卫生, 2013, 29(3): 387-389. DOI: 10.11847/zgggws2013-29-03-26 |
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| 作者姓名： | 陆景坤 田艳 陈朝军 俞腾飞 王一博 李中燕 |
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| 作者单位： | 1.内蒙古医科大学蒙医药研究院GLP中心, 内蒙古 呼和浩特 010010 |
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| 基金项目： | 内蒙古教育厅基金资助项目(NJ09103) |
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| 摘 要： | 目的探讨无机砷化合物对人表皮角质细胞(HaCaT)毒性与氧化应激和砷代谢关系。方法用四甲基偶氮唑盐法测定细胞生存率;检测砷化物对丙二醛(MDA)含量、超氧化物歧化酶(SOD)活力影响;流式细胞仪检测细胞内活性氧(ROS);原子荧光分析方法检测细胞内外不同形态砷含量。结果200.0 μmol/L As2O3(iAsⅢ)、50.0~500.0 μmol/L Na2HAsO4·7H2O(iAsⅤ)能够明显降低HaCaT细胞生存率,生存率分别为(54.8±5.9)%、(85.4±9.5)%、(70.0±4.0)%、(58.8±6.0)%,在低剂量时,2种砷化物表现为促进HaCaT细胞增殖(P<0.05);iAsⅢ组随剂量增加MDA含量梯度增加,iAsⅤ组MDA含量先增加后降低呈倒U形;细胞内ROS含量iAsⅢ组> iAsⅤ组;细胞外iAsⅢ、iAsⅤ含量均高于细胞内,细胞内砷甲基化率表现为5.0 mol/L iAsⅢ组(87.3%)>50.0 mol/L iAsⅢ组(61.8%),5.0 mol/L iAsⅤ组(40.0%)>50.0 mol/L iAsⅤ组(10.5%),且iAsⅢ组高于iAsⅤ组。结论无机砷化物对HaCaT 细胞毒性影响与氧化应激和砷代谢水平有关。
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| 关 键 词： | 砷化合物 人表皮角质细胞(HaCaT) 氧化应激 砷代谢 |
| 收稿时间： | 2012-04-14 |
Cytotoxic effects of different kinds of inorganic arsenicals on HaCaT cells |
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| LU Jing-kun, TIAN Yan, CHEN Chao-jun.et al, . Cytotoxic effects of different kinds of inorganic arsenicals on HaCaT cells[J]. Chinese Journal of Public Health, 2013, 29(3): 387-389. DOI: 10.11847/zgggws2013-29-03-26 |
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| Authors: | LU Jing-kun TIAN Yan CHEN Chao-jun.et al |
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| Affiliation: | 1.GLP Center, Mongolian Medical Science Institute, Inner Mongolia Medical University, Hohhot, Inner Mongolia Autonomous Region 010010, China |
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| Abstract: | ObjectiveTo investigate the relationship between cytotoxicity and oxidative stress and arsenic metabolism induced by different kinds of inorganic arsenicals in epidermal keratinocytes cells(HaCaT).MethodsMethyl thiazolyl tetrazolium(MTT) assay was used to evaluate the cell viability.Malondialdehyde(MDA) content and the activity of the superoxide dismutase(SOD) in HaCaT were detected.The intracellular reactive oxygen species(ROS) were detected with flow cytometry and the atomic fluorescence was used to analyze intracellular or extracellular level of different forms of arsenic.ResultsAs2O3(200.0 μmol/L)and Na2HAsO4·7H2O(≥50.0 μmol/L)could decrease the cell viability,with the survival rates of 54.8±5.9% and 85.4±9.5%,70.0±4.0% and 58.8±6.0%,and could significantly promote the proliferation of HaCaT cell at low dosage(P<0.01,P<0.05).The MDA levels of iAsⅢ groups increased with dose increasing and iAsⅤgroups showed decrease after an increase with an U-shaped dose-respose curve.The SOD activity showed a dose-effect relation with an U-shaped curve.The intracellular ROS decreased with the order of As2O3,Na2HAsO4·7H2O.The extracellular iAsⅢ,iAsⅤcontents were higher than intracellular contents in all groups.The methylation ratio of 5.0 mol/L iAsⅢ group(87.3%) was higher than that of 50.0 mol/L iAsⅢ (61.8%) and the ratio of 5.0 mol/L iAsⅤ groups(40.0%) was higher than that of 250.0 mol/L iAsⅤ(10.5%).The ratio of iAsⅢ groups was higher than that of the iAsⅤ groups.The arsenic levels of the high-dose groups were higher than those of low-dose groups.The efflux ability of low-dose groups were higher and the efflux ability of iAsⅢ groups were lower than those of the iAsⅤ groups.ConclusionThe mechanisms of inorganic arsenic toxicity probably relate to different levels of oxidative stress and arsenical metablism. |
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| Keywords: | arsenicals HaCaT oxidative stress arsenical metablism |
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