Hall effect measurements on CdTe layers electrodeposited from acidic aqueous electrolyte |
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Authors: | Masao Miyake Kuniaki Murase Tetsuji Hirato Yasuhiro Awakura |
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Affiliation: | Department of Materials Science and Engineering, Sakyo-ku, Kyoto University, Kyoto 606-8501, Japan |
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Abstract: | The electrical properties of CdTe layers electrodeposited from an acidic sulfate aqueous electrolyte were examined by resistivity and Hall effect measurements. It was revealed that the resistivity, conduction type, and carrier density of the as-deposited CdTe layers could be controlled by the deposition potential. The resistivity varied in the range from 2 × 106 to 2 × 108 Ω cm. The CdTe layers deposited at potentials slightly positive to the Cd2+/Cd equilibrium potential (?0.37 V vs. SHE?E??0.30 V) had n-type conductions, while those deposited at more positive potentials (?0.15 V ?E??0.05 V) were p-type. The carrier densities of the CdTe layers were on the order of 1010–1011 cm?3. As the deposition potential became more positive, the electron density decreased, and conversely, the hole density increased. The electron mobilities for the n-type CdTe layers were in the range 7–40 cm2 V?1 s?1, while the hole mobility was about 1 cm2 V?1 s?1. |
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Keywords: | Hall effect Resistivity Thin layer Cadmium telluride Solar cells |
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