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Hall effect measurements on CdTe layers electrodeposited from acidic aqueous electrolyte
Authors:Masao Miyake  Kuniaki Murase  Tetsuji Hirato  Yasuhiro Awakura
Affiliation:Department of Materials Science and Engineering, Sakyo-ku, Kyoto University, Kyoto 606-8501, Japan
Abstract:The electrical properties of CdTe layers electrodeposited from an acidic sulfate aqueous electrolyte were examined by resistivity and Hall effect measurements. It was revealed that the resistivity, conduction type, and carrier density of the as-deposited CdTe layers could be controlled by the deposition potential. The resistivity varied in the range from 2 × 106 to 2 × 108 Ω cm. The CdTe layers deposited at potentials slightly positive to the Cd2+/Cd equilibrium potential (?0.37 V vs. SHE?E??0.30 V) had n-type conductions, while those deposited at more positive potentials (?0.15 V ?E??0.05 V) were p-type. The carrier densities of the CdTe layers were on the order of 1010–1011 cm?3. As the deposition potential became more positive, the electron density decreased, and conversely, the hole density increased. The electron mobilities for the n-type CdTe layers were in the range 7–40 cm2 V?1 s?1, while the hole mobility was about 1 cm2 V?1 s?1.
Keywords:Hall effect  Resistivity  Thin layer  Cadmium telluride  Solar cells
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